Search Results - "Rowell, N.L."

Accuracy of an atomic microwave power standard by Paulusse, D.C., Rowell, N.L., Michaud, A.

“…We have built an atomic microwave power standard based on the electromagnetic interaction with laser-cooled atoms. The atoms traversed a waveguide transmission…”
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Oblique incidence infrared reflectance spectroscopy of phonons in cubic MgO, MnO, and NiO by Lockwood, D.J., Yu, Guolin, Rowell, N.L.

“…The infrared (IR) reflectivity of the cubic metal oxides MgO, MnO, and NiO has been measured at room temperature using the technique of oblique incidence. The…”
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Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy by Lockwood, D.J., Yu, Guolin, Rowell, N.L.

“…The transverse (TO) and longitudinal (LO) optical phonons in AlAs, GaP, GaAs, InP, InAs and InSb have been measured at room temperature by infrared…”
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Photoluminescence of strained Si 1 − x − y Ge x C y epilayers on Si(100) by Rowell, N.L., Lockwood, D.J., Baribeau, J.-M.

“…Photoluminescence (PL) spectroscopy has been used to study the incorporation of C in several samples consisting of strained Si 1 − x − y Ge x C y epilayers…”
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Photoluminescence of strained Si1−x−yGexCy epilayers on Si(100) by Rowell, N.L., Lockwood, D.J., Baribeau, J.-M.

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Infrared spectroscopy of self-assembled monolayer films on silicon by Rowell, N.L., Tay, Lilin, Boukherroub, R., Lockwood, D.J.

“…Infrared vibrational spectroscopy in an attenuated total reflection (ATR) geometry has been employed to investigate the presence of organic thin layers on…”
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Photoluminescence of boron-doped Si 1− xGe x epilayers grown by UHV-CVD by Rowell, N.L, Lafontaine, H, Dion, M

“…Low temperature photoluminescence (PL) has been used to characterize 17-nm-thick, boron-doped, Si 0.865Ge 0.135 epilayers on Si(001). The samples included an…”
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Advances in the growth and characterization of Ge quantum dots and islands by Baribeau, J-M., Rowell, N.L., Lockwood, D.J.

“…We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex…”
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Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates by Sheng, S.R., Dion, M., McAlister, S.P., Rowell, N.L.

“…Short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum…”
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Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD by ROWELL, N. L, LAFONTAINE, H, DION, M

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Photoluminescence in UHV-CVD-grown Si 1− xGe x quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress by Rowell, N.L, Aers, G.C, Lafontaine, H, Williams, R.L

“…New photoluminescence data are presented which show an intrinsic conduction band alignment in Si 1− x Ge x quantum wells grown by ultra-high vacuum chemical…”
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Far infrared phonon spectroscopy of In/sub 1-x/Ga/sub x/As epilayers on InP[100] by Rowell, N.L., Lockwood, D.J., Poole, P.J., Yu, G., Shin, H.K.

“…Polarized far infrared reflectance was measured at oblique incidence for a large number of strained In/sub 1-x/Ga/sub x/As epilayers grown on InP wafers. From…”
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Photoluminescence in UHV-CVD-grown Si1-xGex quantum wells on Si(100) : Band alignment variation with excitation density and applied uniaxial stress by ROWELL, N. L, AERS, G. C, LAFONTAINE, H, WILLIAMS, R. L

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Accuracy of an Atomic Microwave Power Standard by Paulusse, D.C., Rowell, N.L., Michaud, A.

“…We have studied the accuracy of the atomic microwave power standard. The atoms are cooled and kept in a magneto-optical trap (MOT), then dropped through a…”
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Sulphur passivation of InAs(Sb) by Gong, X.Y., Yamaguchi, T., Kan, H., Makino, T., Ohshimo, K., Aoyama, M., Kumagawa, M., Rowell, N.L., Rinfret, R.

“…The sulphur passivation for the InAs surface was studied by photoluminescence (PL) and spectroscopic ellipsometry (SE). Effects of the treatment are compared…”
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Photoluminescence of Ge nanocrystals self-assembled on SiO2 by Rowell, N.L., Lockwood, D.J., Karmous, A., Szkutnik, P.D., Berbezier, I., Ronda, A.

“…Ge nanocrystals have been obtained from the dewetting process during thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin…”
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Raman measurements of Ge 1− x Mn x epilayers by Tay, L.-L., Rowell, N.L., Ayoub, J.-P., Berbezier, I., Morresi, L., Pinto, N.

“…Raman scattering has been used to characterize Ge 1− x Mn x (0.01< x<0.051) epilayers grown by MBE on Ge substrates. Ge–Mn clustering corresponding to a Ge 3Mn…”
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Photoluminescence of Ge nanocrystals self-assembled on SiO 2 by Rowell, N.L., Lockwood, D.J., Karmous, A., Szkutnik, P.D., Berbezier, I., Ronda, A.

“…Ge nanocrystals have been obtained from the dewetting process during thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin…”
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Structural characterization of a UHV/CVD-grown SiGe HBT with graded base by Dion, M, Houghton, D.C, Rowell, N.L, Perovic, D.D, Aers, G.C, Rolfe, S.J, Sproule, G.I, Phillips, J.R

“…SiGe/Si base heterostructure bipolar transistors (HBTs) were structurally characterized using a variety of techniques. The SiGe base regions were linearly…”
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Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation by Jorio, A., Carlone, C., Rowell, N.L., Houdayer, A., Parenteau, M.

“…Gallium arsenide (GaAs), doped n with silicon nominally to 10 15 and 10 16 cm −3, grown by molecular beam epitaxy (MBE) and by metallorganic chemical vapour…”
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