Search Results - "Rouvière, J. L"

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography by Béché, A., Rouvière, J.L., Barnes, J.P., Cooper, D.

“…Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron…”
Get full text

Improved precision in strain measurement using nanobeam electron diffraction by Béché, A., Rouvière, J. L., Clément, L., Hartmann, J. M.

“…Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si…”
Get full text

Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction by Brunetti, G, Robert, D, Bayle-Guillemaud, P, Rouvière, J. L, Rauch, E. F, Martin, J. F, Colin, J. F, Bertin, F, Cayron, C

“…A recent transmission electron microscopy (TEM) method using precession electron diffraction (PED) was used to obtain LiFePO4 and FePO4 phase mapping at the…”
Get full text

Theoretical discussions on the geometrical phase analysis by Rouvière, J.L., Sarigiannidou, E.

“…The Geometrical phase analysis, which is a very efficient method to measure deformation from High resolution transmission electron microscopy images, is…”
Get full text

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate by Roque, J., Haas, B., David, S., Rochat, N., Bernier, N., Rouvière, J. L., Salem, B., Gergaud, P., Moeyaert, J., Martin, M., Bertin, F., Baron, T.

“…In 0.3 Ga 0.7 As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor…”
Get full text

Dark field electron holography for strain measurement by Béché, A., Rouvière, J.L., Barnes, J.P., Cooper, D.

“…Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a…”
Get full text

Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model by Pelloux-Prayer, J., Cassé, M., Triozon, F., Barraud, S., Niquet, Y.-M., Rouvière, J.-L., Faynot, O., Reimbold, G.

“…The effect of strain on carrier mobility in triple gate Fully Depleted Silicon On Insulator (FDSOI) nanowires (NWs) is experimentally investigated through…”
Get full text

Visualization of Tm dopant atoms diffused out of GaN quantum dots by Okuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B.

“…GaN quantum dots doped with Tm atoms and embedded in AlN have been characterized by high-angle annular dark-field imaging using a scanning transmission…”
Get full text

Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations by Clément, L., Pantel, R., Kwakman, L. F. Tz, Rouvière, J. L.

“…Local convergent-beam electron diffraction (CBED) patterns have been acquired on focus ion beam prepared samples in order to determine the strain field…”
Get full text

Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure by GALAND, R, BRUNETTI, G, ARNAUD, L, ROUVIERE, J.-L, CLEMENT, L, WALTZ, P, WOUTERS, Y

“…The work presented in this paper illustrates the link between electromigration (EM) and microstructure in copper interconnects. For this study, 70 nm wide…”
Get full text

Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers by Houdellier, F., Roucau, C., Clément, L., Rouvière, J.L., Casanove, M.J.

“…A SiGe layer epitaxially grown on a silicon substrate is experimentally studied by convergent beam electron diffraction (CBED) experiments and used as a test…”
Get full text

Strain distribution in GaN∕AlN quantum-dot superlattices by Sarigiannidou, E., Monroy, E., Daudin, B., Rouvière, J. L., Andreev, A. D.

“…The two-dimensional strain distribution in a GaN∕AlN quantum-dot (QD) superlattice is measured from high-resolution transmission electron microscopy images…”
Get full text

GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN by Adelmann, C., Gogneau, N., Sarigiannidou, E., Rouvière, J.-L., Daudin, B.

“…It is shown that a two-dimensional GaN layer grown on (0001) AlN under Ga-rich conditions remains two-dimensional while annealing under a Ga flux due to a…”
Get full text

Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon by Bonnet, R., Loubradou, M., Youssef, S., Rouvière, J.-L., Fournel, F.

“…The square dislocation network of a (0 0 1) buried small-angle boundary in silicon was observed by dark-field transmission electron microscopy to examine the…”
Get full text

Improved quality GaN grown by molecular beam epitaxy using In as a surfactant by Widmann, F., Daudin, B., Feuillet, G., Pelekanos, N., Rouvière, J. L.

“…The surfactant effect of In during the growth of GaN by molecular beam epitaxy has been investigated. It has been found that the presence of In modifies the…”
Get full text

Polarity determination of GaN films by ion channeling and convergent beam electron diffraction by Daudin, B., Rouvière, J. L., Arlery, M.

“…By using ion channeling and convergent beam electron diffraction techniques, we have determined the absolute polarity of various GaN films grown by MOCVD on…”
Get full text

A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate by BUTTARD, D, DAVID, T, GENTILE, P, DEN HERTOG, M, BARON, T, FERRET, P, ROUVIERE, J. L

Get full text

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology by Reboh, S., Coquand, R., Barraud, S., Loubet, N., Bernier, N., Audoit, G., Rouviere, J.-L., Augendre, E., Li, J., Gaudiello, J., Gambacorti, N., Yamashita, T., Faynot, O.

“…Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si,…”
Get full text

TEM contrast of dissociated screw dislocations in silicon nearby a free surface by Boussaid, Ahlem, Youssef, Sami, Fnaiech, Mustapha, Rouvière, J.-L., Bonnet, Roland

“…Dislocations are commonly analyzed by weak‐beam or high resolution transmission electron microscopy (TEM) from the observation of the thinnest parts of TEM…”
Get full text

Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer by Barski, A., Derivaz, M., Rouvière, J. L., Buttard, D.

“…We show that germanium dots can be directly grown by molecular beam epitaxy (MBE) on a silicon (001) surface covered by a thin (1.2-nm-thick) thermal silicon…”
Get full text