Search Results - "Rotella, F.M."

Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation by Rotella, F.M., Ma, G., Yu, Z., Dutton, R.W.

“…This paper describes how device simulation may be used for the modeling, analysis, and design of radio-frequency (RF) laterally diffused…”
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A 40-44 Gb/s 3× Oversampling CMOS CDR/1:16 DEMUX by Nedovic, N, Tzartzanis, N, Tamura, H, Rotella, F.M, Wiklund, M, Mizutani, Y, Okaniwa, Y, Kuroda, T, Ogawa, J, Walker, W.W

“…A CMOS CDR and 1:16 DEMUX fabricated in a low-cost 90 nm bulk CMOS process operates at 40-44 Gb/s and dissipates 910 mW. A quarter-rate hybrid…”
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A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design by Rotella, F., Bhattacharya, B.K., Blaschke, V., Matloubian, M., Brotman, A., Yuhua Cheng, Divecha, R., Howard, D., Lampaert, K., Miliozzi, P., Racanelli, M., Singh, P., Zampardi, P.J.

“…We present a broad-band lumped element planar inductor model that is suitable for RFIC design in silicon technologies. We provide extensions of the modeling…”
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A 40-44 Gb/s 3 \times Oversampling CMOS CDR/1:16 DEMUX by Nedovic, N., Tzartzanis, N., Tamura, H., Rotella, F.M., Wiklund, M., Mizutani, Y., Okaniwa, Y., Kuroda, T., Ogawa, J., Walker, W.W.

“…A CMOS CDR and 1:16 DEMUX fabricated in a low-cost 90 nm bulk CMOS process operates at 40-44 Gb/s and dissipates 910 mW. A quarter-rate hybrid…”
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Modeling and optimization of inductors with patterned ground shields for a high performance fully integrated switched tuning VCO by Rotella, F.M., Zachan, J.

“…Pattern ground shield inductors have been shown to improve the performance of on-chip inductors by reducing the impact of the resistive substrate. This paper…”
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Integrated circuit design for manufacturing through statistical simulation of process steps by Sanders, T.J., Rekab, K., Rotella, F.M., Means, D.P.

“…The methodology, implementation, and results of a design for manufacturing (DFM) technique as applied to an integrated circuit boron base formation for an…”
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A broad-band scalable lumped-element inductor model using analytic expressions to incorporate skin effect, substrate loss, and proximity effect by Rotella, F.M., Blaschke, V., Howard, D.

“…A new broad-band scalable spiral inductor model incorporating skin effect, substrate loss, and proximity effect is presented. The construction of the lumped…”
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Harmonic balance device analysis of an LDMOS RF power amplifier with parasitics and matching network by Rotella, F.M., Zhiping Yu, Dutton, R., Troyanovsky, B., Ma, G.

“…This paper discusses a harmonic balance simulation involving a high power LDMOS device, bias circuitry and matching network. The paper begins with a discussion…”
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Techniques for optimizing statistical simulations (IC processes) by Rotella, F.M., Sanders, T.J.

“…The authors address the methodology developed for the Florida SEMATECH Center of Excellence (FSCOE) for performing statistical simulations of integrated…”
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