Search Results - "Rotella, F M"
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Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation
Published in IEEE transactions on microwave theory and techniques (01-06-2000)“…This paper describes how device simulation may be used for the modeling, analysis, and design of radio-frequency (RF) laterally diffused…”
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2
Integrated circuit design for manufacturing through statistical simulation of process steps
Published in IEEE transactions on semiconductor manufacturing (01-11-1992)“…The methodology, implementation, and results of a design for manufacturing (DFM) technique as applied to an integrated circuit boron base formation for an…”
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3
Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From LCR Meter and VNA Measurement
Published in IEEE transactions on electron devices (01-01-2012)“…In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and…”
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4
Key Aspects in Modeling of Thin Epi SOS Technology With Application of BSIMSOI
Published in IEEE journal of solid-state circuits (01-05-2011)“…This work addresses the device modeling challenges of production-quality, state-of-the-art, silicon-on-sapphire (SOS) processes. Differences between SOS,…”
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5
A 40-44 Gb/s 3× Oversampling CMOS CDR/1:16 DEMUX
Published in IEEE journal of solid-state circuits (01-12-2007)“…A CMOS CDR and 1:16 DEMUX fabricated in a low-cost 90 nm bulk CMOS process operates at 40-44 Gb/s and dissipates 910 mW. A quarter-rate hybrid…”
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6
A 40-44 Gb/s 3x Oversampling CMOS CDR/1:16 DEMUX
Published in IEEE journal of solid-state circuits (01-12-2007)“…A CMOS CDR and 1:16 DEMUX fabricated in a low-cost 90 nm bulk CMOS process operates at 40-44 Gb/s and dissipates 910 mW. A quarter-rate hybrid…”
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1/ƒ noise measurements of bonded SOS and Epi SOS fully-depleted MOSFETs to 10 MHz
Published in IEEE 2011 International SOI Conference (01-10-2011)“…1/f noise measured up to a frequency of 10 MHz is compared for fully depleted MOSFETS on epitaxial silicon grown directly on sapphire and silicon bonded to…”
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8
HAPI Bands: A haptic augmented posture interface
Published in 2012 IEEE Haptics Symposium (HAPTICS) (01-03-2012)“…In the instruction of motor tasks, feedback from a teacher in the form of visual demonstration, aural directives, or physical guidance enhances student…”
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Characterization, design, modeling, and model validation of silicon-wafer M:N balun components under matched and unmatched conditions
Published in IEEE journal of solid-state circuits (01-05-2006)“…In this paper, we characterize and model M:N baluns for silicon RFIC design. A modeling methodology is presented based on a geometrically scalable…”
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10
Echocardiographic findings in patients with eating disorders: A case–control study
Published in Nutrition, metabolism, and cardiovascular diseases (01-07-2015)Get full text
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11
An orthotic hand-assistive exoskeleton for actuated pinch and grasp
Published in 2009 IEEE 35th Annual Northeast Bioengineering Conference (01-04-2009)“…Over 450,000 Americans suffer from debilitative disorders resulting in the loss of proper hand function. A lightweight, non-cumbrous, orthotic hand exoskeleton…”
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12
Gradual anisometric-isometric transition for human-machine interfaces
Published in 2011 Annual International Conference of the IEEE Engineering in Medicine and Biology Society (01-01-2011)“…Human-machine interfaces (HMIs) are widely used in biomedical applications, from teleoperated surgical systems to rehabilitation devices. This paper…”
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13
Modeling and optimization of inductors with patterned ground shields for a high performance fully integrated switched tuning VCO
Published in Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) (2002)“…Pattern ground shield inductors have been shown to improve the performance of on-chip inductors by reducing the impact of the resistive substrate. This paper…”
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14
A broad-band scalable lumped-element inductor model using analytic expressions to incorporate skin effect, substrate loss, and proximity effect
Published in Digest. International Electron Devices Meeting (2002)“…A new broad-band scalable spiral inductor model incorporating skin effect, substrate loss, and proximity effect is presented. The construction of the lumped…”
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15
Harmonic balance device analysis of an LDMOS RF power amplifier with parasitics and matching network
Published in SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest (1997)“…This paper discusses a harmonic balance simulation involving a high power LDMOS device, bias circuitry and matching network. The paper begins with a discussion…”
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Techniques for optimizing statistical simulations (IC processes)
Published in Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium (1991)“…The authors address the methodology developed for the Florida SEMATECH Center of Excellence (FSCOE) for performing statistical simulations of integrated…”
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