Search Results - "Rossnagel, Stephen M."

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    Electrochemical Characterization of Thin Film Electrodes Toward Developing a DNA Transistor by Harrer, Stefan, Ahmed, Shafaat, Afzali-Ardakani, Ali, Luan, Binquan, Waggoner, Philip S, Shao, Xiaoyan, Peng, Hongbo, Goldfarb, Dario L, Martyna, Glenn J, Rossnagel, Stephen M, Deligianni, Lili, Stolovitzky, Gustavo A

    Published in Langmuir (21-12-2010)
    “…The DNA-Transistor is a device designed to control the translocation of single-stranded DNA through a solid-state nanopore. Functionality of the device is…”
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    Journal Article
  3. 3

    Ionic Field Effect Transistors with Sub-10 nm Multiple Nanopores by Nam, Sung-Wook, Rooks, Michael J, Kim, Ki-Bum, Rossnagel, Stephen M

    Published in Nano letters (13-05-2009)
    “…We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications…”
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    Journal Article
  4. 4

    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate by Zhang, Zhen, Zhang, Shi-Li, Yang, Bin, Zhu, Yu, Rossnagel, Stephen M., Gaudet, Simon, Kellock, Andrew J., Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (15-02-2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100)…”
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    Journal Article
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    Magnetron sputtering by Rossnagel, Stephen M.

    “…Magnetron sputtering developed rapidly in the 1980s for semiconductor, hard coating, and architectural glass applications. While the general operating…”
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    Book Review Journal Article
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    Numerical simulation of etching and deposition processes by HAMAGUCHI, S, MAYO, A. A, ROSSNAGEL, S. M, KOTECKI, D. E, MILKOVE, K. R, WANG, C, FARRELL, C. E

    Published in Japanese Journal of Applied Physics (01-07-1997)
    “…Accurate numerical simulation of microscopic surface topography evolution can facilitate the development of various etching and deposition processes for…”
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    Conference Proceeding Journal Article
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    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni 1 − x Pt x on Si substrate by Zhang, Zhen, Zhang, Shi-Li, Yang, Bin, Zhu, Yu, Rossnagel, Stephen M., Gaudet, Simon, Kellock, Andrew J., Jordan-Sweet, Jean, Lavoie, Christian

    Published in Applied physics letters (19-02-2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
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    Journal Article
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    Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate by Zhang, Zhen, Shi-Li, Zhang, Bin, Yang, Yu, Zhu, Stephen, M. Rossnagel, Simon, Gaudet, Andrew, J. Kellock, Jean, Jordan-Sweet, Christian, Lavoie

    Published in Applied physics letters (2010)
    “…This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni 0.95 Pt 0.05 , and Ni 0.9 Pt 0.1 formed on…”
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    Journal Article
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    Atomic layer deposition of Ge@@d2@Sb@@d2@Te@@d5@ thin films by Ritala, Mikko, Pore, Viljami, Hatanpaeae, Timo, Heikkilae, Mikko, Leskelae, Markku, Mizohata, Kenichiro, Schrott, Alejandro, Raoux, Simone, Rossnagel, Stephen M

    Published in Microelectronic engineering (01-09-2009)
    “…Ge@@d2@Sb@@d2@Te@@d5@ (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition…”
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    Journal Article
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    Atomic layer deposition of Ge 2Sb 2Te 5 thin films by Ritala, Mikko, Pore, Viljami, Hatanpää, Timo, Heikkilä, Mikko, Leskelä, Markku, Mizohata, Kenichiro, Schrott, Alejandro, Raoux, Simone, Rossnagel, Stephen M.

    Published in Microelectronic engineering (2009)
    “…Ge 2Sb 2Te 5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied…”
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    Journal Article
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    Directional copper deposition using dc magnetron self-sputtering by Radzimski, Zbigniew J., Posadowski, Witold M., Rossnagel, Stephen M., Shingubara, Shoso

    “…A directional copper deposition process has been developed that uses a dc magnetron source operating in self-sputtering mode. The process is performed at 10 −5…”
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    Journal Article
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    Sputtered atom transport processes by Rossnagel, S.M.

    Published in IEEE transactions on plasma science (01-12-1990)
    “…It is noted that the transport of sputtered atoms can be described in terms of three pressure regimes: low pressure, where no collisions occur during the…”
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    Journal Article
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    Grain growth in copper films exposed to magnetically enhanced plasmas by Naeem, Munir D., Rossnagel, Stephen M., Rajan, Krishna

    “…The effects of low‐energy plasma bombardment have been quantified for the first time. The plasma effects on thin copper films (∼50 nm) have been studied by…”
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    Journal Article