Search Results - "Rossetto, Isabella"

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio, Nanni, Antonio, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper presents an extensive investigation of the properties of the trap with activation energy equal to 0.6 eV, which has been demonstrated to be…”
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Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation by Fregolent, Manuel, Boito, Mirco, Disaro, Michele, De Santi, Carlo, Buffolo, Matteo, Canato, Eleonora, Gallo, Michele, Miccoli, Cristina, Rossetto, Isabella, Pizzo, Giansalvo, Russo, Alfio, Iucolano, Ferdinando, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

“…For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative…”
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Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs by Meneghesso, Gaudenzio, Bisi, Davide, Rossetto, Isabella, Ruzzarin, Maria, Meneghini, Matteo, Zanoni, Enrico

“…This paper reviews the most relevant threshold-voltage instabilities and dielectric breakdown mechanisms in GaN-based transistors with…”
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Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate by Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, Gaudenzio

“…This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted…”
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Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress by Meneghini, Matteo, Rossetto, Isabella, Hurkx, Fred, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper reports the experimental demonstration of time-dependent dielectric breakdown in GaN-based high-electron mobility transistors (HEMTs) submitted to…”
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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility…”
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Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs by Rossetto, Isabella, Meneghini, Matteo, Barbato, Marco, Rampazzo, Fabiana, Marcon, Denis, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper reports an extensive analysis of the electrostatic discharge (ESD) robustness and of the corresponding failure mechanisms of AlGaN/gallium nitride…”
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Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs by Borga, Matteo, Meneghini, Matteo, Rossetto, Isabella, Stoffels, Steve, Posthuma, Niels, Van Hove, Marleen, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper demonstrates and investigates the time-dependent vertical breakdown of GaN-on-Si power transistors. The study is based on electrical…”
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Reliability and failure analysis in power GaN-HEMTs: An overview by Meneghini, Matteo, Rossetto, Isabella, De Santi, Carlo, Rampazzo, Fabiana, Tajalli, Alaleh, Barbato, Alessandro, Ruzzarin, Maria, Borga, Matteo, Canato, Eleonora, Zanoni, Enrico, Meneghesso, Gaudenzio

“…Power GaN transistors have recently demonstrated to be excellent devices for application in power electronics. The high breakdown field and the superior…”
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Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests by Jie Hu, Stoffels, Steve, Ming Zhao, Tallarico, Andrea Natale, Rossetto, Isabella, Meneghini, Matteo, Xuanwu Kang, Bakeroot, Benoit, Marcon, Denis, Kaczer, Ben, Decoutere, Stefaan, Groeseneken, Guido

“…In this letter, we investigate the time-dependent breakdown mechanisms in edge terminated AlGaN/GaN lateral Schottky diodes under high-temperature reverse bias…”
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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress by Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter demonstrates that GaN-based MIS-HEMTs submitted to stress with high-temperature, high drain bias, and constant source current (HTSC stress) may…”
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Field and hot electron-induced degradation in GaN-based power MIS-HEMTs by Tajalli, Alaleh, Meneghini, Matteo, Rossetto, Isabella, Moens, Peter, Banerjee, Abhishek, Zanoni, Enrico, Meneghesso, Gaudenzio

“…We investigate the degradation of AlGaN/GaN MIS-HEMTs submitted to gate step-stress experiments, and demonstrate the existence of field- and hot-electron…”
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Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin by Meneghini, Matteo, Barbato, Alessandro, Rossetto, Isabella, Favaron, Andrea, Silvestri, Marco, Lavanga, Simone, Haifeng Sun, Brech, Helmut, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper demonstrates that-for high-electric fields and drain current levels-the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency…”
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Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate by Meneghesso, Gaudenzio, Meneghini, Matteo, Bisi, Davide, Rossetto, Isabella, Wu, Tian-Li, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Decoutere, Stefaan, Zanoni, Enrico

“…This paper reports an extensive analysis of the trapping and reliability issues in AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility…”
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Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry by Meneghini, Matteo, Rossetto, Isabella, Borga, Matteo, Canato, Eleonora, De Santi, Carlo, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Zanoni, Enrico, Stoffels, Steve, Van Hove, Marleen, Posthuma, Niels, Decoutere, Stefaan

“…This paper investigates the time-dependent degradation of normally-off transistors with p-GaN gate submitted to constant voltage stress. Based on combined dc…”
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Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis by Rossetto, Isabella, Meneghini, Matteo, Rizzato, Vanessa, Ruzzarin, Maria, Favaron, Andrea, Stoffels, Steve, Van Hove, Marleen, Posthuma, Niels, Wu, Tian-Li, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By…”
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GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift by Dalcanale, Stefano, Meneghini, Matteo, Tajalli, Alaleh, Rossetto, Isabella, Ruzzarin, Maria, Zanoni, Enrico, Meneghesso, Gaudenzio, Moens, Peter, Banerjee, Abhishek, Vandeweghe, Steven

“…This paper reports on the trapping mechanism of GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) designed to work in a…”
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Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress by Rossetto, Isabella, Meneghini, Matteo, Silvestri, Riccardo, Dalcanale, Stefano, Zanoni, Enrico, Meneghesso, Gaudenzio, Hilt, Oliver, Bahat-Treidel, Eldad, Wuerfl, Joachim

“…This paper presents a detailed study of the failure mechanisms induced by a forward bias overstress on gallium nitride (GaN) high electron mobility transistors…”
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ESD sensitivity of a GaAs MMIC microwave power amplifier by Tazzoli, Augusto, Rossetto, Isabella, Zanoni, Enrico, Yufeng, Dai, Tomasi, Tiziana, Meneghesso, Gaudenzio

“…► The EOS/ESD sensitivity of a GaAs RF power amplifier was investigated under HBM, MM and TLP regimes. ► Hard breakdown failure modes were identified due to…”
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Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Cester, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio

“…The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the…”
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