Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to Sr at high temperatures, in situ during molecular beam epitaxy growth of (Ba,Sr)O on Si(100). Our results confirm that the deposition of addit...

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Bibliographic Details
Published in:Applied physics letters Vol. 87; no. 26; pp. 262905 - 262905-3
Main Authors: Norga, G. J., Marchiori, C., Guiller, A., Locquet, J. P., Rossel, Ch, Siegwart, H., Caimi, D., Fompeyrine, J., Conard, T.
Format: Journal Article
Language:English
Published: United States American Institute of Physics 26-12-2005
Subjects:
BARIUM OXIDES
CRYSTAL GROWTH
DEPOSITION
ELECTRON DIFFRACTION
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OSCILLATIONS
OXIDATION
PHASE SHIFT
REFLECTION
SILICON
STRONTIUM OXIDES
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Summary:We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to Sr at high temperatures, in situ during molecular beam epitaxy growth of (Ba,Sr)O on Si(100). Our results confirm that the deposition of additional metallic Sr at low temperature is essential for preventing the incorporation of the Sr termination layer in the (Ba,Sr)O layer during its growth, and for obtaining monolayer thin (Ba,Sr)O layers with good crystallinity and minimal density of interfacial Si-O bonds on Si(100).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2158018