Search Results - "Rosner, S.J"

The role of threading dislocations in the physical properties of GaN and its alloys by Speck, J.S., Rosner, S.J.

“…In this paper, we review progress on understanding the role of threading dislocations (TDs) in the physical properties of GaN and its alloys. A growing body of…”
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Failure mode analysis of oxide VCSELs in high humidity and high temperature by Suning Xie, Herrick, R.W., Chamberlin, D., Rosner, S.J., McHugo, S., Girolami, G., Mayonte, M., Seongsin Kim, Widjaja, W.

“…High-speed fiber-optic transceiver modules using parallel optics require that oxide-confined vertical-cavity surface-emitting lasers (VCSELs) be moisture…”
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High-efficiency InGaN MQW blue and green LEDs by Lester, S.D, Ludowise, M.J, Killeen, K.P, Perez, B.H, Miller, J.N, Rosner, S.J

“…High-efficiency blue and green light-emitting diodes (LEDs) with multiple quantum well (MQW) InGaN active regions have been grown by low-pressure MOCVD on…”
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Electrical conduction through compound semiconductor wafer bonded interfaces by Vanderwater, D.A., Kish, F.A., Peansky, M.J., Rosner, S.J.

“…The recent introduction of a family of very high-efficiency transparent-substrate (TS) ( Al x Ga 1 −x) 0.5 In 0.5 P GaP LEDs was made possible by the…”
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Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE by Mars, D.E., Rosner, S.J., Kaneko, Y., Nakagawa, S., Takeuchi, T., Yamada, N.

“…We report on the growth of VCSEL structures on (3 1 1)B GaAs substrates. For the growth of AlGaAs and AlAs, the best morphology and material quality were…”
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Double-diffused graded SiGe-base bipolar transistors by Vook, D., Kamins, T.I., Burton, G., Vande Voorde, P.J., Wang, H.-H., Coen, R., Lin, J., Pettengill, D.F., Yu, P.-K., Rosner, S.J., Turner, J.E., Laderman, S.S., Horng-Sen Fu, Wang, A.S.

“…Self-aligned SiGe/Si bipolar transistors have been fabricated using a single-polysilicon, double-diffused process with the base in a graded SiGe layer to…”
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Characterization of p-N Si/sub 1-x/Ge/sub x//Si heterojunctions grown by limited reaction processing by King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P., Rosner, S.J., Reid, G., Laderman, S., Nauka, K., Kamins, T.I.

“…p-n Si/sub 1-x/Ge/sub x//Si heterojunction diodes were grown by limited reaction processing (LRP) and fabricated into device structures. Alloy layer…”
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A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts by Huang, W.M., Drowley, C.I., Vande Voorde, P.J., Pettengill, D., Turner, J.E., Kapoor, A.K., Lin, C.-H., Burton, G., Rosner, S.J., Brigham, K., Fu, H.-S., Oh, S.-Y., Scott, M.P., Chiang, S.-Y., Wang, A.

“…An experimental bipolar transistor structure with self-aligned base-emitter contacts formed using one polysilicon layer is presented with geometries and…”
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Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition by Dupuis, R.D., Grudowski, P.A., Eiting, C.J., Shmagin, I.C., Kolbas, R.M., Rosner, S.J.

“…We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on…”
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Time-resolved Photoluminescence Of (Al)GaInP by Fouquet, J.E., Robbins, V.M., Kuo, C.P., Fletcher, R.M., Osentowski, T.D., Rosner, S.J., Blum, O.

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STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts by Drowley, C.I., Huang, W.M., Vande Voorde, P.J., Pettengill, D., Turner, J.E., Kapoor, A.K., Lin, C.-H., Burton, G., Rosner, S.J., Brigham, K., Fu, H.-S., Oh, S.-Y., Scott, M.P., Chiang, S.-Y., Wang, A.

“…Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and…”
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Interface control in double diffused polysilicon bipolar transistors by Turner, J.E., Coen, D., Burton, G., Kapoor, A., Rosner, S.J., Johnson, W.

“…The properties of the polysilicon/silicon interface which contribute to variations in DC performance of bipolar transistors are investigated. Measurements of…”
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High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors by Kamins, T.I., Nauka, K., Camnitz, L.H., Kruger, J.B., Turner, J.E., Rosner, S.J., Scott, M.P., Hoyt, J.L., King, C.A., Noble, D.B., Gibbons, J.F.

“…Small-geometry, high-performance Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors have been fabricated using chemical vapor deposition to form the…”
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Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing by Gibbons, J.F., King, C.A., Hoyt, J.L., Noble, D.B., Gronet, C.M., Scott, M.P., Rosner, S.J., Reid, G., Laderman, S., Nauka, K., Turner, J.

“…The DC performance of Si/Si/sub 1-x/Ge heterojunction bipolar transistors (HBTs) fabricated from epitaxial layers grown by limited reaction processing is…”
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Wafer bonding of InP and GaAs: interface characterization and device applications by Yang, L., Carey, K., Ludowise, M., Perez, W., Mars, D.E., Fouquet, J.E., Nauka, K., Rosner, S.J., Ram, R.J., Dudley, J.J., Babic, D.I., Bowers, J.

“…Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of…”
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