Search Results - "Rosendale, Glen"
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1
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs
Published in APL materials (01-04-2022)“…Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show non-volatile current–voltage characteristics, which are both universal and…”
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Journal Article -
2
Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses
Published in Japanese Journal of Applied Physics (01-04-2016)“…In emerging non-volatile memories, nano-random access memory (NRAM) has advantages of small program current and high endurance compared with resistive RAM…”
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Journal Article -
3
A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM)
Published in 2010 Proceedings of ESSCIRC (01-09-2010)“…A 4Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 μm CMOS process at a production fab. The CNT storage…”
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Conference Proceeding -
4
Investigation and Improvement of Verify-Program in Carbon Nanotube-Based Nonvolatile Memory
Published in IEEE transactions on electron devices (01-09-2015)“…Carbon nanotube (CNT)-based random access memory (NRAM) cells are measured to investigate cell program at different set current compliances and temperatures…”
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Journal Article -
5
Training DNN IoT Applications for Deployment On Analog NVM Crossbars
Published in 2020 International Joint Conference on Neural Networks (IJCNN) (01-07-2020)“…A trend towards energy-efficiency, security and privacy has led to a recent focus on deploying deep-neural networks (DNN) on microcontrollers. However, limits…”
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Conference Proceeding -
6
23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 endurance
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01-06-2014)“…Carbon nanotube (CNT) non-volatile memory provides excellent cell characteristics of >10 11 endurance, low power, fast <;5ns array program, and multi-level…”
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Conference Proceeding -
7
Training DNN IoT Applications for Deployment On Analog NVM Crossbars
Published 11-05-2020“…A trend towards energy-efficiency, security and privacy has led to a recent focus on deploying DNNs on microcontrollers. However, limits on compute and memory…”
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Journal Article -
8
Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology
Published in 2022 IEEE International Memory Workshop (IMW) (01-05-2022)“…We have developed an ultra-dense (sub-50 nm device diameter), ultra-fast (2 ns write pulse), non-polar, non-volatile memory that can operate at > 200°C…”
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Conference Proceeding -
9
A 3D stackable Carbon Nanotube-based nonvolatile memory (NRAM)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01-09-2010)“…A 4 Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 μm CMOS process at a production fab. The CNT storage…”
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Conference Proceeding -
10
Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
Published 15-04-2022“…Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal…”
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Journal Article -
11
Storage element scaling impact on CNT memory retention and ON/OFF window
Published in 2014 IEEE 6th International Memory Workshop (IMW) (01-05-2014)“…CNT (Carbon Nanotube) based memory (NRAM) demonstrates a beneficial scaling effect related to the patterned area of the CNT region, such that the scaled…”
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Conference Proceeding