Search Results - "Rosendale, Glen"

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  1. 1

    Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs by Paz de Araujo, C. A., Celinska, Jolanta, McWilliams, Chris R., Shifren, Lucian, Yeric, Greg, Huang, X. M. Henry, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanas’ev, Valeri, Marino, Eduardo C., Narayan, Dushyant Madhav, Dessau, Daniel S.

    Published in APL materials (01-04-2022)
    “…Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show non-volatile current–voltage characteristics, which are both universal and…”
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    Journal Article
  2. 2

    Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses by Ning, Sheyang, Iwasaki, Tomoko Ogura, Hachiya, Shogo, Rosendale, Glen, Manning, Monte, Viviani, Darlene, Rueckes, Thomas, Takeuchi, Ken

    Published in Japanese Journal of Applied Physics (01-04-2016)
    “…In emerging non-volatile memories, nano-random access memory (NRAM) has advantages of small program current and high endurance compared with resistive RAM…”
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    Journal Article
  3. 3

    A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM) by Rosendale, G, Kianian, S, Manning, M, Hamilton, D, Huang, X M H, Robinson, K, Kim, Y W, Rueckes, T

    Published in 2010 Proceedings of ESSCIRC (01-09-2010)
    “…A 4Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 μm CMOS process at a production fab. The CNT storage…”
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    Conference Proceeding
  4. 4

    Investigation and Improvement of Verify-Program in Carbon Nanotube-Based Nonvolatile Memory by Sheyang Ning, Iwasaki, Tomoko Ogura, Shimomura, Kazuya, Johguchi, Koh, Yanagizawa, Eisuke, Rosendale, Glen, Manning, Monte, Viviani, Darlene, Rueckes, Thomas, Takeuchi, Ken

    Published in IEEE transactions on electron devices (01-09-2015)
    “…Carbon nanotube (CNT)-based random access memory (NRAM) cells are measured to investigate cell program at different set current compliances and temperatures…”
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    Journal Article
  5. 5

    Training DNN IoT Applications for Deployment On Analog NVM Crossbars by Garcia-Redondo, Fernando, Das, Shidhartha, Rosendale, Glen

    “…A trend towards energy-efficiency, security and privacy has led to a recent focus on deploying deep-neural networks (DNN) on microcontrollers. However, limits…”
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    Conference Proceeding
  6. 6

    23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 endurance by Sheyang Ning, Iwasaki, Tomoko Ogura, Shimomura, Kazuya, Johguchi, Koh, Rosendale, Glen, Manning, Monte, Viviani, Darlene, Rueckes, Thomas, Takeuchi, Ken

    “…Carbon nanotube (CNT) non-volatile memory provides excellent cell characteristics of >10 11 endurance, low power, fast <;5ns array program, and multi-level…”
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    Conference Proceeding
  7. 7

    Training DNN IoT Applications for Deployment On Analog NVM Crossbars by García-Redondo, Fernando, Das, Shidhartha, Rosendale, Glen

    Published 11-05-2020
    “…A trend towards energy-efficiency, security and privacy has led to a recent focus on deploying DNNs on microcontrollers. However, limits on compute and memory…”
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    Journal Article
  8. 8

    Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology by Suryavanshi, Saurabh V., Yeric, Greg, Irby, Max, Huang, X. M. Henry, Rosendale, Glen, Shifren, Lucian

    “…We have developed an ultra-dense (sub-50 nm device diameter), ultra-fast (2 ns write pulse), non-polar, non-volatile memory that can operate at > 200°C…”
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    Conference Proceeding
  9. 9

    A 3D stackable Carbon Nanotube-based nonvolatile memory (NRAM) by Kianian, Sohrab, Rosendale, Glen, Manning, Monte, Hamilton, Darlene, Huang, X M Henry, Robinson, Karl, Young Weon Kim, Rueckes, Thomas

    “…A 4 Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 μm CMOS process at a production fab. The CNT storage…”
    Get full text
    Conference Proceeding
  10. 10

    Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs by de Araujo, C. A. Paz, Celinska, Jolanta, McWilliams, Chris R, Shifren, Lucian, Yeric, Greg, Huang, X. M. Henry, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanas'ev, Valeri, Marino, Eduardo C, Narayan, Dushyant Madhav, Dessau, Daniel S

    Published 15-04-2022
    “…Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal…”
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    Journal Article
  11. 11

    Storage element scaling impact on CNT memory retention and ON/OFF window by Rosendale, Glen, Viviani, Darlene, Manning, Monte, Henry Huang, X. M., Rueckes, Thomas, Shi Jie Wen, Wong, Richard

    “…CNT (Carbon Nanotube) based memory (NRAM) demonstrates a beneficial scaling effect related to the patterned area of the CNT region, such that the scaled…”
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    Conference Proceeding