Search Results - "Romero, M. Fátima"
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Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
Published in IEEE transactions on electron devices (01-02-2012)Get full text
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Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
Published in IEEE electron device letters (01-10-2017)“…The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility…”
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Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure
Published 31-05-2018“…IEEE Electron Device Lett. 38 (2017) 1441-1444 The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer…”
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