Search Results - "Romano, Linda T."
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Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
Published in Japanese Journal of Applied Physics (01-04-1998)“…Plan-view transmission electron microscopy (TEM) and cathodoluminescence (CL) images were taken for the same sample at exactly the same location in n-type GaN…”
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2
Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser
Published in Applied physics letters (12-10-1998)“…We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm…”
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3
Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser
Published in Applied physics letters (24-04-2000)“…We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple-quantum-well distributed-feedback laser in the violet/blue spectral region. The…”
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4
Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers
Published in Applied physics letters (09-11-1998)“…Laser-diode heterostructures of InGaAlN containing a third-order diffraction grating for distributed optical feedback have been examined with transmission…”
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5
Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
Published in Japanese Journal of Applied Physics (01-03-1998)“…The threading dislocations in GaN films grown on Al 2 O 3 substrates were studied by plan view transmission electron microscopy (TEM). A pure edge dislocation…”
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6
Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure
Published in Applied physics letters (26-07-1999)“…Room-temperature continuous-wave (cw) operation is demonstrated with InGaN multiple-quantum-well laser diodes containing an asymmetric waveguide structure…”
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7
Characterization of intra-cavity reflections by Fourier transforming spectral data of optically pumped InGaN lasers
Published in Applied physics letters (01-12-1997)“…Fourier analysis of laser emission spectra just above threshold is used to evaluate the impact of structural defects on the emission from optically pumped…”
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8
Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes
Published in IEEE journal of selected topics in quantum electronics (01-05-1998)“…We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion…”
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Performance and optical gain characteristic of InGaN MQW laser diodes
Published in Journal of luminescence (01-05-2000)“…This paper discusses the performance of InGaN multi-quantum well (MQW) laser diodes and the effects of composition fluctuations on the optical gain…”
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