Search Results - "Romandic, I."

Experimental and theoretical study of the thermal solubility of the vacancy in germanium by Vanhellemont, J., Lauwaert, J., Witecka, A., Śpiewak, P., Romandic, I., Clauws, P.

“…Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The vacancy formation energy and thermal equilibrium…”
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Transformation of germanium to fluogermanates by Kalem, S., Arthursson, Ö., Romandic, I.

“…The surface of a single-crystal germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO 3 chemical…”
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Ab initio calculation of the formation energy of charged vacancies in germanium by Śpiewak, P., Sueoka, K., Vanhellemont, J., Kurzydłowski, K.J., Młynarczyk, K., Wabiński, P., Romandic, I.

“…Density functional theory (DFT) with local density approximation (LDA) has been used to calculate the formation energy ( E f) of the neutral and charged…”
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si by Gaubas, E., Vanhellemont, J., Simoen, E., Romandic, I., Geens, W., Clauws, P.

“…Results are presented of a comparative study of the dependence of carrier recombination characteristics on excitation and dopant concentration in Si and Ge…”
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Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals by Hens, S., Vanhellemont, J., Poelman, D., Clauws, P., Romandic, I., Theuwis, A., Holsteyns, F., Van Steenbergen, J.

“…Optical inspection of polished Czochralski-grown Ge wafers typically reveals the presence of surface pits similar to the Crystal Originated Particles (COP's)…”
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Optical characterization of dislocation free Ge and GeOI wafers by Kalem, Seref, Romandic, I., Theuwis, A.

“…Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-on-insulator(GeOI) wafers have been characterized using Fourier…”
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Ab-initio simulation of self-interstitial in germanium by Śpiewak, P., Vanhellemont, J., Sueoka, K., Kurzydłowski, K.J., Romandic, I.

“…Density functional theory (DFT) with local density approximation including on-site Coulomb interaction (LDA+ U) has been used to calculate the formation energy…”
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Molecular dynamics simulation of intrinsic point defects in germanium by Śpiewak, P., Muzyk, M., Kurzydłowski, K.J., Vanhellemont, J., Młynarczyk, K., Wabiński, P., Romandic, I.

“…Results are presented of the calculations of thermodynamic properties of intrinsic point defects in germanium. The results are based on molecular dynamics…”
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On the characterisation of grown-in defects in Czochralski-grown Si and Ge by Vanhellemont, J., Van Steenbergen, J., Holsteyns, F., Roussel, P., Meuris, M., Młynarczyk, K., Śpiewak, P., Geens, W., Romandic, I.

“…High yield processing of advanced integrated devices poses stringent demands on substrate and active device layer quality. Wafers have to be free of…”
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Simulation of point defect diffusion in germanium by Lauwaert, J., Hens, S., Śpiewak, P., Wauters, D., Poelman, D., Romandic, I., Clauws, P., Vanhellemont, J.

“…First results are presented of the simulation of the thermodynamic properties of intrinsic point defects and interstitial oxygen in single crystal germanium…”
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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth by Śpiewak, P., Kurzydłowski, K.J., Vanhellemont, J., Clauws, P., Wabiński, P., Młynarczyk, K., Romandic, I., Theuwis, A.

“…Results are presented of the simulation of vacancy agglomeration in Czochralski-grown germanium crystals. Molecular dynamics (MD) calculations using a…”
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Gigahertz modulation of tunneling-based GaAs light emitters by Van Hoof, C., De Neve, H., Mertens, R., Romandic, I., Goovaerts, E., Borghs, G.

“…We demonstrate GaAs surface-emitting light-emitting diodes (LED's) containing a resonant tunneling structure that combine ultrahigh modulation bandwidths in…”
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Gigahertz microcavity light emitters using resonant tunneling diodes by Van Hoof, C, De Neve, H, Romandic, I, Goovaerts, E, Borghs, G

“…By designing a planar microcavity around a resonant tunneling light-emitting diode (RTLED), the high modulation speed of resonant tunneling devices is combined…”
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Time dependence of quantum well recombination luminescence in a bipolar AlAs/GaAs resonant tunnelling structure by Romandic, I, Bouwen, A, Goovaerts, E, Van Hoof, C, Mielants, M, Borghs, G

“…The tunnelling transport of electrons and holes is investigated in a double-barrier AlAs/GaAs resonant tunnelling light-emitting diode (RTLED) biased below…”
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Formation of germanates on germanium by chemical vapor treatment by Kalem, Seref, Arthursson, Örjan, Romandic, Igor

“…The surface of a single crystal Germanium wafer was transformed to fluoride and oxide crystals upon exposure to a vapor of HF and HNO 3 chemical mixture…”
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Transformation of germanium to fluogermanates by Kalem, S, Arthursson, O, Romandic, I

“…Applied Physics-A 98, 423(2010) The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to…”
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Optical characterization of dislocation free Ge and GeOI wafers by Kalem, S, Romandic, I, Theuwis, A

“…Thin Solid Films 518, 2377(2010) Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been…”
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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si by GAUBAS, E, VANHELLEMONT, J, SIMOEN, E, ROMANDIC, I, GEENS, W, CLAUWS, P

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Ab initio calculation of the formation energy of charged vacancies in germanium by SPIEWAK, P, SUEOKA, K, VANHELLEMONT, J, KURZYDTOWSKI, K. J, MTYNARCZYK, K, WABINSKI, P, ROMANDIC, I

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Simulation of point defect diffusion in germanium by LAUWAERT, J, HENS, S, SPIEWAK, P, WAUTERS, D, POELMAN, D, ROMANDIC, I, CLAUWS, P, VANHELLEMONT, J

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