Search Results - "Roman Engel‐Herbert"

Refine Results
  1. 1

    Highly Conductive SrVO3 as a Bottom Electrode for Functional Perovskite Oxides by Moyer, Jarrett A., Eaton, Craig, Engel-Herbert, Roman

    Published in Advanced materials (Weinheim) (12-07-2013)
    “…Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode…”
    Get full text
    Journal Article
  2. 2

    Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE by Brahlek, Matthew, Gupta, Arnab Sen, Lapano, Jason, Roth, Joseph, Zhang, Hai‐Tian, Zhang, Lei, Haislmaier, Ryan, EngelHerbert, Roman

    Published in Advanced functional materials (28-02-2018)
    “…Driven by an ever‐expanding interest in new material systems with new functionality, the growth of atomic‐scale electronic materials by molecular beam epitaxy…”
    Get full text
    Journal Article
  3. 3

    In‐Operando Spatiotemporal Imaging of Coupled Film‐Substrate Elastodynamics During an Insulator‐to‐Metal Transition by Stone, Greg, Shi, Yin, Jerry, Matthew, Stoica, Vladimir, Paik, Hanjong, Cai, Zhonghou, Schlom, Darrell G., EngelHerbert, Roman, Datta, Suman, Wen, Haidan, Chen, Long‐Qing, Gopalan, Venkatraman

    Published in Advanced materials (Weinheim) (01-06-2024)
    “…The drive toward non‐von Neumann device architectures has led to an intense focus on insulator‐to‐metal (IMT) and the converse metal‐to‐insulator (MIT)…”
    Get full text
    Journal Article
  4. 4

    On‐Demand Nanoscale Manipulations of Correlated Oxide Phases by Schrecongost, Dustin, Aziziha, Mina, Zhang, Hai‐Tian, Tung, I‐Cheng, Tessmer, Joseph, Dai, Weitao, Wang, Qiang, EngelHerbert, Roman, Wen, Haidan, Picard, Yoosuf N., Cen, Cheng

    Published in Advanced functional materials (01-12-2019)
    “…Controlling material properties at the nanoscale is a critical enabler of high performance electronic and photonic devices. A prototypical material example is…”
    Get full text
    Journal Article
  5. 5

    Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE by Fazlioglu‐Yalcin, Benazir, Suceava, Albert C., Kuznetsova, Tatiana, Wang, Ke, Gopalan, Venkatraman, EngelHerbert, Roman

    Published in Advanced materials interfaces (01-04-2023)
    “…BaTiO3 is a technologically relevant material in the perovskite oxide class with above‐room‐temperature ferroelectricity and a very large electro‐optical…”
    Get full text
    Journal Article
  6. 6

    A steep-slope transistor based on abrupt electronic phase transition by Shukla, Nikhil, Thathachary, Arun V., Agrawal, Ashish, Paik, Hanjong, Aziz, Ahmedullah, Schlom, Darrell G., Gupta, Sumeet Kumar, Engel-Herbert, Roman, Datta, Suman

    Published in Nature communications (07-08-2015)
    “…Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials…”
    Get full text
    Journal Article
  7. 7

    Wafer-scale growth of VO2 thin films using a combinatorial approach by Zhang, Hai-Tian, Zhang, Lei, Mukherjee, Debangshu, Zheng, Yuan-Xia, Haislmaier, Ryan C., Alem, Nasim, Engel-Herbert, Roman

    Published in Nature communications (09-10-2015)
    “…Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide…”
    Get full text
    Journal Article
  8. 8

    The ReaxFF reactive force-field: development, applications and future directions by Senftle, Thomas P, Hong, Sungwook, Islam, Md Mahbubul, Kylasa, Sudhir B, Zheng, Yuanxia, Shin, Yun Kyung, Junkermeier, Chad, Engel-Herbert, Roman, Janik, Michael J, Aktulga, Hasan Metin, Verstraelen, Toon, Grama, Ananth, van Duin, Adri C T

    Published in npj computational materials (04-03-2016)
    “…The reactive force-field (ReaxFF) interatomic potential is a powerful computational tool for exploring, developing and optimizing material properties. Methods…”
    Get full text
    Journal Article
  9. 9

    Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator by Liu, Tao, Kally, James, Pillsbury, Timothy, Liu, Chuanpu, Chang, Houchen, Ding, Jinjun, Cheng, Yang, Hilse, Maria, Engel-Herbert, Roman, Richardella, Anthony, Samarth, Nitin, Wu, Mingzhong

    Published in Physical review letters (01-07-2020)
    “…We report the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator…”
    Get full text
    Journal Article
  10. 10

    Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach by Jalan, Bharat, Engel-Herbert, Roman, Wright, Nicholas J., Stemmer, Susanne

    “…A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy by Zhang, Lei, Engel-Herbert, Roman

    “…We report the heteroepitaxial growth of SrTiO3 thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic…”
    Get full text
    Journal Article
  13. 13

    Accessing a growth window for SrVO3 thin films by Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai-Tian, Engel-Herbert, Roman

    Published in Applied physics letters (05-10-2015)
    “…Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy,…”
    Get full text
    Journal Article
  14. 14

    Scaling growth rates for perovskite oxide virtual substrates on silicon by Lapano, Jason, Brahlek, Matthew, Zhang, Lei, Roth, Joseph, Pogrebnyakov, Alexej, Engel-Herbert, Roman

    Published in Nature communications (05-06-2019)
    “…The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are…”
    Get full text
    Journal Article
  15. 15

    Hidden transport phenomena in an ultraclean correlated metal by Brahlek, Matthew, Roth, Joseph D., Zhang, Lei, Briggeman, Megan, Irvin, Patrick, Lapano, Jason, Levy, Jeremy, Birol, Turan, Engel-Herbert, Roman

    Published in Nature communications (24-06-2024)
    “…Advancements in materials synthesis have been key to unveil the quantum nature of electronic properties in solids by providing experimental reference points…”
    Get full text
    Journal Article
  16. 16
  17. 17
  18. 18

    Unleashing Strain Induced Ferroelectricity in Complex Oxide Thin Films via Precise Stoichiometry Control by Haislmaier, Ryan C., Grimley, Everett D., Biegalski, Michael D., LeBeau, James M., Trolier-McKinstry, Susan, Gopalan, Venkatraman, Engel-Herbert, Roman

    Published in Advanced functional materials (25-10-2016)
    “…Strain tuning has emerged as a powerful means to enhance properties and to induce otherwise unattainable phenomena in complex oxide films. However, by…”
    Get full text
    Journal Article
  19. 19

    Imprinting of Local Metallic States into VO2 with Ultraviolet Light by Zhang, Hai-Tian, Guo, Lu, Stone, Greg, Zhang, Lei, Zheng, Yuan-Xia, Freeman, Eugene, Keefer, Derek W., Chaudhuri, Subhasis, Paik, Hanjong, Moyer, Jarrett A., Barth, Michael, Schlom, Darrell G., Badding, John V., Datta, Suman, Gopalan, Venkatraman, Engel-Herbert, Roman

    Published in Advanced functional materials (26-09-2016)
    “…Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external…”
    Get full text
    Journal Article
  20. 20

    Quantification of trap densities at dielectric/III-V semiconductor interfaces by Engel-Herbert, Roman, Hwang, Yoontae, Stemmer, Susanne

    Published in Applied physics letters (09-08-2010)
    “…High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into…”
    Get full text
    Journal Article