Search Results - "Rolfe, S.J"

Molecular beam epitaxy synthesis of Si1-yCy and Si1-x-yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma by BARIBEAU, J.-M, LOCKWOOD, D. J, BALLE, J, ROLFE, S. J, SPROULE, G. I, MOISA, S

Get full text

Molecular beam epitaxy synthesis of Si 1− yC y and Si 1− x− yGe xC y alloys and Ge islands using an electron cyclotron resonance argon/methane plasma by Baribeau, J.-M., Lockwood, D.J., Balle, J., Rolfe, S.J., Sproule, G.I., Moisa, S.

“…We report the growth of Si 1− y C y and Si 1− x− y Ge x C y alloys on Si(001) by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy using…”
Get full text

Si 1− x− yGe xC y alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy by Baribeau, J.-M, Lockwood, D.J, Balle, J, Rolfe, S.J, Sproule, G.I

“…We report the growth of Si 1− y C y and Si 1− x− y Ge x C y alloys by electron cyclotron resonance (ECR) plasma-assisted Si MBE using an argon/methane gas…”
Get full text

Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy by BARIBEAU, J.-M, LOCKWOOD, D. J, BALLE, J, ROLFE, S. J, SPROULE, G. I

Get full text

Contamination in molecular beam epitaxy: the role of arsenic drag effect by Wasilewski, Z.R., Rolfe, S.J., Wilson, R.A.

“…We have measured levels of Al, In and Si in nominally pure GaAs layers grown by molecular beam epitaxy as a function of arsenic flux for a number of different…”
Get full text

Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment by Baribeau, J.-M, Lockwood, D.J, Lu, Z.H, Labbé, H.J, Rolfe, S.J, Sproule, G.I

“…a-Si/insulator multilayers have been deposited on (0 0 1) Si by electron gun Si evaporation and periodic electron cyclotron resonance plasma oxidation or…”
Get full text

Quantum well intermixing caused by nonstoichiometric InP by Haysom, J.E., Poole, P.J., Aers, G.C., Rolfe, S.J., Raymond, S., Mitchell, I.V., Charbonneau, S.

“…We study the thermal stability of InP-based quantum well hetero-structures in which the temperature of growth of one or more layers is slightly reduced in…”
Get full text

Structural characterization of a UHV/CVD-grown SiGe HBT with graded base by Dion, M, Houghton, D.C, Rowell, N.L, Perovic, D.D, Aers, G.C, Rolfe, S.J, Sproule, G.I, Phillips, J.R

“…SiGe/Si base heterostructure bipolar transistors (HBTs) were structurally characterized using a variety of techniques. The SiGe base regions were linearly…”
Get full text

MeV ion implantation for electrical isolation of p/sup +/ InP epi-layers by Ridgway, M.C., Davies, M., Sedivy, J.Z., Vandenberg, R., Rolfe, S.J., Jackman, T.E.

“…Electrical isolation of p/sup +/-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species,…”
Get full text

Implantation and annealing of Cu in InP for electrical isolation: microstructural characterisation by Llewellyn, D.J., Ridgway, M.C., Gerald, F., Davies, M., Rolfe, S.J.

“…The formation of metallic precipitates to produce embedded Schottky barriers within a conductive layer has been investigated as a potentially new form of…”
Get full text

Residual impurities in high purity InP grown by chemical beam epitaxy by Rao, T.S., Lacelle, C., Rolfe, S.J., Allard, L., Charbonneau, S., Roth, A.P., Steiner, T., Thewalt, M.L.W.

“…In the past few years, chemical beam epitaxy (CBE) has succeeded in producing high purity InP with residual carrier concentrations in the low 10/sup 14/ cm/sup…”
Get full text