Search Results - "Roldan, Juan Bautista"

Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient by Acal, Christian, Maldonado, David, Aguilera, Ana M., Zhu, Kaichen, Lanza, Mario, Roldán, Juan Bautista

“…We present a new methodology to quantify the variability of resistive switching memories. Instead of statistically analyzing few data points extracted from…”
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High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors by Pazos, Sebastian, Becker, Thales, Villena, Marco Antonio, Zheng, Wenwen, Shen, Yaqing, Yuan, Yue, Alharbi, Osamah, Zhu, Kaichen, Roldán, Juan Bautista, Wirth, Gilson, Palumbo, Felix, Lanza, Mario

“…Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential…”
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In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations by Balaguer, M., Aranda, J. B. R., Gamiz, F.

“…We have used simulation to characterize quantum mechanical effects in undoped double-gate metal-oxide-semiconductor field-effect transistors for different…”
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A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse by Blanco-Filgueira, Beatriz, Lopez Martinez, Paula, Bautista Roldan Aranda, Juan

“…The CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review of significant CMOS photodiode models that can be found in…”
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices by Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Bautista Roldan, Juan, Bargallo Gonzalez, Mireia

“…The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current-voltage(I-V) characteristics of Ni/HfO 2 /n +…”
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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance by Maldonado, David, Cantudo, Antonio, Perez, Eduardo, Romero-Zaliz, Rocio, Perez-Bosch Quesada, Emilio, Mahadevaiah, Mamathamba Kalishettyhalli, Jimenez-Molinos, Francisco, Wenger, Christian, Roldan, Juan Bautista

“…We characterize TiN/Ti/HfO 2 /TiN memristive devices for neuromorphic computing. We analyze different features that allow the devices to mimic biological…”
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Closed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes by Blanco-Filgueira, Beatriz, Lopez, Paula, Roldan, Juan Bautista

“…A closed-form and explicit 2-D analytical model for crosstalk(CTK) effects in p-n + CMOS photodiodes for pixel design optimization has been developed in this…”
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Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes by Ibáñez, María José, Barrera, Domingo, Maldonado, David, Yáñez, Rafael, Roldán, Juan Bautista

“…An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive…”
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Analytical Model for Crosstalk in p-nwell Photodiodes by Blanco-Filgueira, Beatriz, Lopez Martinez, Paula, Roldan Aranda, Juan Bautista, Hauer, Johann

“…The response and crosstalk (CTK) of the p-n well photodiode were studied through device simulations performed with ATLAS and experimental data. As a result, a…”
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Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies by Pérez, Eduardo, Maldonado, David, Acal, Christian, Ruiz-Castro, Juan Eloy, Aguilera, Ana María, Jiménez-Molinos, Francisco, Roldán, Juan Bautista, Wenger, Christian

“…•Forming voltages statistically analyzed by phase-type distributions (PHD) approach.•Three HfO2-based oxides tested in the temperature range from −40 to…”
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Simulation of serial RRAM cell based on a Verilog-A compact model by Yang, Binbin, Arumi, Daniel, Manich, Salvador, Gomez-Pau, Alvaro, Rodriguez-Montanes, Rosa, Roldan, Juan Bautista, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Fang, Liang

“…Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle…”
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Standards for the Characterization of Endurance in Resistive Switching Devices by Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

“…Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic…”
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An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs by Moreno Perez, Enrique, Roldan Aranda, Juan Bautista, Garcia Ruiz, Francisco J., Barrera Rosillo, Domingo, Ibanez Perez, Maria Jose, Godoy, A., Gamiz, F.

“…A new approach to the analytical solution of the 2-D Poisson equation including the inversion-charge density in undoped square gate-all-around…”
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Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis by Maldonado, David, Cantudo, Antonio, Swamy Reddy, Keerthi Dorai, Pechmann, Stefan, Uhlmann, Max, Wenger, Christian, Roldan, Juan Bautista, Perez, Eduardo

“…Memristive devices, particularly resistive random access memory (RRAM) cells based on hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a…”
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO 2 /n + -Si RRAM Devices by Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Roldan, Juan Bautista, Gonzalez, Mireia Bargallo

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Analytical Model for Crosstalk in p-n well Photodiodes by Blanco-Filgueira, Beatriz, Martinez, Paula Lopez, Aranda, Juan Bautista Roldan, Hauer, Johann

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Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching based Memristors by Picos, R., Roldan, J. B., Al Chawa, M. M., Garcia-Fernandez, P., Jimenez-Molinos, F, Garcia-Moreno, E.

“…We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on…”
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Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors by Picos, Rodrigo, Roldan, Juan Bautista, Chawa, Mohamed Moner Al, Garcia-Fernandez, Pedro, Jimenez-Molinos, Francisco, Garcia-Moreno, Eugeni

“…Radioengineering, 24(2): 420-424 (2015). [http://hdl.handle.net/10481/36994] We have measured the transition process from the high to low resistivity states,…”
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