Search Results - "Roh, Tae Moon"
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1
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform
Published in IEEE transactions on electron devices (01-10-2022)“…We developed a novel technique, selective epitaxial lateral overgrowth (ELO), to fabricate a local but sufficiently large silicon-on-insulator (SOI) platform…”
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2
Analysis of temporal carrier build‐up in reconfigurable field‐effect transistor
Published in Electronics letters (01-01-2022)“…Based on the analysis of the carrier density change of a symmetric gate reconfigurable field‐effect transistor that can operate p‐ or n‐type transistors in an…”
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3
High-voltage power integrated circuit technology using SOI for driving plasma display panels
Published in IEEE transactions on electron devices (01-06-2001)“…A new high-voltage (HV) power IC technology using high-performance p-LDMOS transistors and an excellent dielectric isolation technology has been proposed to…”
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4
Characterization of Reconfigurable FETs Fabricated on Si Epilayer on SiO2
Published in 2021 International Semiconductor Conference (CAS) (06-10-2021)“…We report characteristics of reconfigurable field effect transistors (FETs) fabricated on locally grown Si epilayer on amorphous SiO 2 . The present devices…”
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5
Optical characteristics of silicon semiconductor bridges under high current density conditions
Published in IEEE transactions on electron devices (01-05-2001)“…The optical emission spectra (180-700 nm) of plasma produced by a semiconductor bridge (SCB) with aluminum or tungsten electrodes have been measured and…”
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6
A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing
Published in IEEE transactions on electron devices (01-02-2003)“…A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher…”
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7
A Dual-Channel Pipelined ADC With Sub-ADC Based on Flash-SAR Architecture
Published in IEEE transactions on circuits and systems. II, Express briefs (01-11-2012)“…This brief presents a 10-bit dual-channel pipelined flash-successive approximation register (SAR) analog-to-digital converter (ADC) for high-speed…”
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8
A highly reliable trench DMOSFET employing self-align technique and hydrogen annealing
Published in IEEE electron device letters (01-12-2001)“…A novel process technique for fabricating trench double diffused MOSFETs (DMOSFET) using three mask layers is realized in order to obtain cost-effective…”
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9
A novel simplified process for fabricating a very high density p-channel trench gate power MOSFET
Published in IEEE electron device letters (01-07-2000)“…A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is…”
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10
Fast human detection using selective block-based HOG-LBP
Published in 2012 19th IEEE International Conference on Image Processing (01-09-2012)“…We propose a speed up method for the Histograms of Oriented Gradients - Local Binary Pattern (HOG-LBP) based pedestrian detector. Our method is based on the…”
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11
Rare-earth gate oxides for GaAs MOSFET application
Published in Applied surface science (31-08-2006)“…Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering…”
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12
A novel automatic white balance for image stitching on mobile devices
Published in 2011 IEEE International Conference on Consumer Electronics (ICCE) (01-01-2011)“…When several images are stitched into a panorama, the illumination difference across input images remains as a major problem. To maintain the color constancy…”
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13
Behavior of trench surface by H2 annealing for reliable trench gate oxide
Published in Journal of crystal growth (01-07-2003)Get full text
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14
Predictive model of a reduced surface field p-LDMOSFET using neural network
Published in Solid-state electronics (01-12-2004)“…Due to complex dynamics, it has been extremely difficult to model high power devices. A predictive model is constructed by using a backpropagation neural…”
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15
Binary-Truncated CDMA-Based On-Chip Network
Published in 2007 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2007)“…In this paper we present a new communication network for on-chip interconnection. The network concentrates on small size communication link, non blocking…”
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16
In situ implementation of silicon epitaxial layer on amorphous SiO2 using reduced-pressure chemical vapor deposition
Published in Applied materials today (01-09-2021)“…•A silicon epilayer is grown on amorphous SiO2 by lateral overgrowth mechanism, which shows excellent crystalline quality from SEM and HRTEM analyses. With the…”
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17
A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
Published in IEEE transactions on microwave theory and techniques (01-08-1997)“…A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the…”
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18
Effects of buffer layer structure on polysilicon buffer LOCOS for the isolation of submicron silicon devices
Published in IEEE transactions on electron devices (01-10-1998)“…The effects of a buffer layer structure on polysilicon buffered LOCOS were shown and analyzed. Sample wafers are classified into four groups to show the effect…”
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19
Electrical properties of ultrathin oxide grown by high pressure oxidation and N2O nitridation for ULSI device applications
Published in International journal of electronics (01-04-2001)“…For the first time, the feasibility of ultrathin oxides grown by high pressure oxidation (HIPOX) technology in O 2 ambient and nitrided in N 2 O ambient with…”
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20
A 12-bit 100-MS/s pipelined ADC in 45-nm CMOS
Published in 2011 International SoC Design Conference (01-11-2011)“…This paper presents a 12-bit 100-MS/s pipeline analog-to-digital converter (ADC) in a 45-nm CMOS technology. The low-voltage circuit techniques and a careful…”
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