Search Results - "Roh, Jangho"
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A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
Published in Nanoscale research letters (07-04-2020)“…The chemical, physical, and electrical properties of the atomic layer deposited Hf 0.5 Zr 0.5 O 2 thin films using tetrakis(ethylmethylamino) (TEMA) and…”
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Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
Published in Advanced electronic materials (01-02-2019)“…Various possibilities have been proposed as the cause of the doped‐ or undoped‐HfO2 thin film materials showing unusual ferroelectricity. These assumptions are…”
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Modeling of Negative Capacitance in Ferroelectric Thin Films
Published in Advanced materials (Weinheim) (01-08-2019)“…The negative capacitance (NC) effect in ferroelectric thin films has attracted a great deal of attention from the material and semiconductor device communities…”
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4
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf 0.5 Zr 0.5 O 2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
Published in Nanoscale research letters (07-04-2020)“…The chemical, physical, and electrical properties of the atomic layer deposited Hf Zr O thin films using tetrakis(ethylmethylamino) (TEMA) and…”
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Journal Article -
5
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf 0.5 Zr 0.5 O 2 Thin Films
Published in Advanced electronic materials (01-02-2019)“…Various possibilities have been proposed as the cause of the doped‐ or undoped‐HfO 2 thin film materials showing unusual ferroelectricity. These assumptions…”
Get full text
Journal Article