Search Results - "Roenkov, A D"

Sublimation growth of AlN bulk crystals in Ta crucibles by Mokhov, E.N., Avdeev, O.V., Barash, I.S., Chemekova, T.Yu, Roenkov, A.D., Segal, A.S., Wolfson, A.A., Makarov, Yu.N., Ramm, M.G., Helava, H.

“…AlN single crystals of 0.5 in diameter and up to 10–12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm…”
Get full text

Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors by Eliseev, I. A., Gushchina, E. A., Klotchenko, S. A., Lebedev, A. A., Lebedeva, N. M., Lebedev, S. P., Nashchekin, A. V., Petrov, V. N., Puzyk, M. V., Roenkov, A. D., Smirnov, A. N., Tanklevskaya, E. M., Usikov, A. S., Shabunina, E. I., Schmidt, N. M.

“…The well-known effect of the local interaction between graphene and photoresist (LIGF) during the creation of biosensors is shown to lead to non-uniform…”
Get full text

Studying the Sensitivity of Graphene for Biosensor Applications by Usikov, A. S., Lebedev, S. P., Roenkov, A. D., Barash, I. S., Novikov, S. V., Puzyk, M. V., Zubov, A. V., Makarov, Yu. N., Lebedev, A. A.

“…We have studied the response of graphene-film-based chips on SiC substrates (the relative change in the chip resistance) to coming into contact with…”
Get full text

Experimental and theoretical analysis of sublimation growth of AlN bulk crystals by Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu, Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., Helava, H.

“…The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC)…”
Get full text

Modeling of facet formation in SiC bulk crystal growth by Matukov, I.D., Kalinin, D.S., Bogdanov, M.V., Karpov, S.Yu, Ofengeim, D.Kh, Ramm, M.S., Barash, J.S., Mokhov, E.N., Roenkov, A.D., Vodakov, Yu.A., Ramm, M.G., Helava, H., Makarov, Yu.N.

“…Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural…”
Get full text

Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas by Segal, A.S, Vorob'ev, A.N, Karpov, S.Yu, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Makarov, Yu.N

“…Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical…”
Get full text

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere by Karpov, S. Yu, Zimina, D. V., Makarov, Yu. N., Mokhov, E. N., Roenkov, A. D., Ramm, M. G., Vodakov, Yu. A.

“…The growth of AlN crystals by sublimation technique is investigated. Two mechanisms of Al and N2 transport from the source to the seed are distinguished —…”
Get full text

Electron paramagnetic resonance of the scandium acceptor in 6H silicon carbide by März, M., Reinke, J., Greulich-Weber, S., Spaeth, J.-M., Overhof, H., Mokhov, E.N., Roenkov, A.D., Kalabukhova, E.N.

“…In a Sc-doped 6HSiC epitaxial layer on an n-type 6HSiC substrate three new electron paramagnetic resonance (EPR) spectra were observed. They are explained as…”
Get full text

On mechanisms of sublimation growth of AlN bulk crystals by Segal, A.S, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Roenkov, A.D, Ramm, M.G, Vodakov, Yu.A

“…A novel model of bulk AlN crystal growth by the sublimation technique is developed. The model takes into account both diffusive and convective transport of…”
Get full text

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers by Vodakov, Yu.A., Roenkov, A. D., Ramm, M. G., Mokhov, E. N., Makarov, Yu.N.

“…Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC…”
Get full text

Analysis of sublimation growth of bulk SiC crystals in tantalum container by Karpov, S.Yu, Kulik, A.V, Zhmakin, I.A, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A

“…Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred…”
Get full text

High rate GaN epitaxial growth by sublimation sandwich method by Vodakov, Yu.A., Mokhov, E.N., Roenkov, A.D., Boiko, M.E., Baranov, P.G.

“…Thick GaN epitaxial layers were grown by the sublimation “sandwich method” (SSM) on SiC substrates at temperatures from 1100°C to 1250°C in ammonia flow…”
Get full text

Optimization of sublimation growth of SiC bulk crystals using modeling by Ramm, M.S, Mokhov, E.N, Demina, S.E, Ramm, M.G, Roenkov, A.D, Vodakov, Yu.A, Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Kulik, A.V, Makarov, Yu.N

“…Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this…”
Get full text

Transport phenomena in sublimation growth of SiC bulk crystals by Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Zhmakin, A.I

“…Sublimation growth of SiC bulk crystals in the atmosphere of concentrated multi-component vapor is studied using a specially developed model of transport…”
Get full text

Growth of silicon carbide bulk crystals by the sublimation sandwich method by Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu.A.

“…Sublimation sandwich method used earlier to obtain SiC epilayers is applied for growth of SiC bulk crystals. The possibility to obtain the SiC crystals of…”
Get full text

SiC growth in tantalum containers by sublimation sandwich method by Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu.A.

“…Tantalum is proposed as container material for the growth of low defect SiC epitaxial layers by providing a graphitefree process environment. It allows the…”
Get full text

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy by Solomonov, A. V., Tarasov, S. A., Men’kovich, E. A., Lamkin, I. A., Kurin, S. Yu, Antipov, A. A., Barash, I. S., Roenkov, A. D., Helava, H., Makarov, Yu. N.

“…The results of work on developing and studying ultraviolet (UV) light-emitting diodes (LEDs) based on GaN/AlGaN heterostructures fabricated on Al 2 O 3 (0001)…”
Get full text

Analysis of silicon carbide growth by sublimation sandwich method by Karpov, S.Yu, Makarov, Yu.N., Mokhov, E.N., Ramm, M.G., Ramm, M.S., Roenkov, A.D., Talalaev, R.A., Vodakov, Yu.A.

Get full text

Radiation hardness of n-GaN schottky diodes by Lebedev, A. A., Belov, S. V., Mynbaeva, M. G., Strel’chuk, A. M., Bogdanova, E. V., Makarov, Yu. N., Usikov, A. S., Kurin, S. Yu, Barash, I. S., Roenkov, A. D., Kozlovski, V. V.

“…Schottky-barrier diodes with a diameter of ~10 µm are fabricated on n -GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates…”
Get full text

Electron paramagnetic resonance of scandium in silicon carbide by Baranov, P. G., Il’in, I. V., Mokhov, E. N., Roenkov, A. D., Khramtsov, V. A.

Get full text