Search Results - "Rodrigues, Francio"

Modeling the impact of incomplete conformality during atomic layer processing by Reiter, Tobias, Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Weinbub, Josef, Hössinger, Andreas, Filipovic, Lado

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Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures by Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Reiter, Tobias, Klemenschits, Xaver, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef

“…Atomic layer deposition allows for precise control over film thickness and conformality. It is a critical enabler of high aspect ratio structures, such as 3D…”
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Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon by Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Wachter, Georg, Trupke, Michael, Schmid, Ulrich, Hössinger, Andreas, Weinbub, Josef

“…•Low-bias plasma etching of Si using SF6 is a near-isotropic alternative to wet etching.•Precise topography simulation of the final etched geometries is…”
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3D modeling of feature-scale fluorocarbon plasma etching in silica by Rodrigues, Frâncio, Felipe Aguinsky, Luiz, Lenz, Christoph, Hössinger, Andreas, Weinbub, Josef

“…Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic…”
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Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structures by Razera, Ricardo A. Z., Boudinov, Henri I., Rodrigues, Frâncio S. B., Ferreira, Rodrigo Z., Feil, Adriano F.

“…The current–voltage (J–V) curves of Al/TiO2/n‐Si structures present an anomalous behavior where the current becomes constant for a reverse bias higher than…”
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Automatic grid refinement for thin material layer etching in process TCAD simulations by Lenz, Christoph, Manstetten, Paul, Aguinsky, Luiz Felipe, Rodrigues, Francio, Hössinger, Andreas, Weinbub, Josef

“…Thin material layers are common structures in modern semiconductor device fabrication and are particularly necessary for light-emitting diodes and…”
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Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations by Lenz, Christoph, Toifl, Alexander, Quell, Michael, Rodrigues, Francio, Hössinger, Andreas, Weinbub, Josef

“…•Improved simulation time of selective epitaxial growth simulation.•Curvature of the waver surface utilized to detect features.•Locally increased grid…”
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Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching by Rodrigues, Francio, Aguinsky, Luiz Felipe, Toifl, Alexander, Scharinger, Alexander, Hossinger, Andreas, Weinbub, Josef

“…Fluorocarbon plasma etching is a key enabling technology for modern semiconductor fabrication processes. Particularly, fluorocarbon etching of SiO 2 via…”
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Fabrication and characterization of a pH sensor by Rodrigues, Francio, Boudinov, Henri Ivanov

“…Ion Sensitive Field Effect Transistors (ISFETs) revolutionized pH and chemical sensing technology with its small size and compatibility with high integrated…”
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A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication by Aguinsky, Luiz Felipe, Toifl, Alexander, Rodrigues, Francio, Hossinger, Andreas, Weinbub, Josef

“…Knudsen diffusion is a transport process characterized by a diffusivity being derived from molecule-geometry interactions instead of molecule-molecule…”
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Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si by Aguinsky, Luiz Felipe, Wachter, Georg, Rodrigues, Francio, Scharinger, Alexander, Toifl, Alexander, Trupke, Michael, Schmid, Ulrich, Hossinger, Andreas, Weinbub, Josef

“…Low-bias etching of Si using SF 6 plasma is a valuable tool in the manufacturing of semiconductor and MEMS devices. This kind of etching has strong isotropic…”
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Anomalous Current–Voltage Behavior in Al/TiO 2 /n‐Si Structures by Razera, Ricardo A. Z., Boudinov, Henri I., Rodrigues, Frâncio S. B., Ferreira, Rodrigo Z., Feil, Adriano F.

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Photo and electroluminescence from SiNx layers deposited by reactive sputtering by Sombrio, Guilherme, Rodrigues, Francio, Franzen, Paulo L., Soave, Paulo A., Boudinov, Henri I.

“…Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were…”
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Modeling Incomplete Conformality during Atomic Layer Deposition in High Aspect Ratio Structures by Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Reiter, Tobias, Klemenschits, Xaver, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef

“…Atomic layer deposition allows for precise control over film thickness and conformality. It is a critical enabler of high aspect ratio structures, such as 3D…”
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