Search Results - "Rodmacq, B."

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  1. 1

    Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers by Bandiera, S., Sousa, R. C., Rodmacq, B., Dieny, B.

    Published in Applied physics letters (02-04-2012)
    “…We demonstrate that the effective magnetic anisotropy of sputtered (Co/Pt) multilayers can be doubled by limiting the interdiffusion occurring at Co/Pt…”
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  2. 2

    Spin-torque oscillator using a perpendicular polarizer and a planar free layer by Ebels, U, Delaët, B, Houssameddine, D, Rodmacq, B, Firastrau, I, Ponthenier, F, Brunet, M, Thirion, C, Michel, J.-P, Prejbeanu-Buda, L, Cyrille, M.-C, Redon, O, Dieny, B

    Published in Nature materials (01-06-2007)
    “…Spintronics materials have recently been considered for radio-frequency devices such as oscillators by exploiting the transfer of spin angular momentum between…”
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  3. 3

    Creep and flow regimes of magnetic domain-wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy by Metaxas, P J, Jamet, J P, Mougin, A, Cormier, M, Ferré, J, Baltz, V, Rodmacq, B, Dieny, B, Stamps, R L

    Published in Physical review letters (23-11-2007)
    “…We report on magnetic domain-wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied…”
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  4. 4

    Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions by Nistor, L. E., Rodmacq, B., Auffret, S., Dieny, B.

    Published in Applied physics letters (05-01-2009)
    “…This letter presents a study of perpendicular magnetic anisotropy in oxide/Co/Pt structures, which could constitute the upper magnetic electrode of magnetic…”
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  5. 5

    Asymmetric Interfacial Perpendicular Magnetic Anisotropy in Pt/Co/Pt Trilayers by Bandiera, S., Sousa, R. R., Rodmacq, B. B., Dieny, B.

    Published in IEEE magnetics letters (2011)
    “…An asymmetry in the interfacial anisotropies of Pt/Co and Co/Pt interfaces was observed in Pt/Co/Pt sputtered trilayers, the interfacial anisotropy arising…”
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  6. 6

    Enhancement of perpendicular magnetic anisotropy thanks to Pt insertions in synthetic antiferromagnets by Bandiera, S., Sousa, R. C., Auffret, S., Rodmacq, B., Dieny, B.

    Published in Applied physics letters (13-08-2012)
    “…Synthetic antiferromagnets are of great interest as reference layers in magnetic tunnel junctions since they allow decreasing the dipolar coupling between the…”
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  7. 7

    Bimodal distribution of blocking temperature in exchange-biased ferromagnetic/antiferromagnetic bilayers by Baltz, V., Rodmacq, B., Zarefy, A., Lechevallier, L., Dieny, B.

    “…The blocking temperature TB distribution of various polycrystalline ferromagnetic F/antiferromagnetic AF bilayers exhibits two distinct peaks. This is ascribed…”
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  8. 8

    Domain wall spin torquemeter by Miron, I M, Zermatten, P-J, Gaudin, G, Auffret, S, Rodmacq, B, Schuhl, A

    Published in Physical review letters (03-04-2009)
    “…We report the direct measurement of the nonadiabatic component of the spin torque in domain walls. Our method is independent of both the pinning of the domain…”
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  9. 9

    Direct observation of massless domain wall dynamics in nanostripes with perpendicular magnetic anisotropy by Vogel, J, Bonfim, M, Rougemaille, N, Boulle, O, Miron, I M, Auffret, S, Rodmacq, B, Gaudin, G, Cezar, J C, Sirotti, F, Pizzini, S

    Published in Physical review letters (15-06-2012)
    “…Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO(x)) is shown to exhibit negligible…”
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  10. 10

    Dynamic binding of driven interfaces in coupled ultrathin ferromagnetic layers by Metaxas, P J, Stamps, R L, Jamet, J-P, Ferré, J, Baltz, V, Rodmacq, B, Politi, P

    Published in Physical review letters (09-06-2010)
    “…We demonstrate experimentally dynamic interface binding in a system consisting of two coupled ferromagnetic layers. While domain walls in each layer have…”
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  11. 11

    Tailoring size effects on the exchange bias in ferromagnetic-antiferromagnetic <100 nm nanostructures by BALTZ, V, SORT, J, LANDIS, S, RODMACQ, B, DIENY, B

    Published in Physical review letters (25-03-2005)
    “…The hysteresis loop shift in sub-100 nm ferromagnetic- (FM-)antiferromagnetic (AFM) nanostructures can be either enhanced or reduced with respect to continuous…”
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  12. 12

    Tailoring perpendicular exchange bias in [Pt/Co]-IrMn multilayers by SORT, J, BALTZ, V, GARCIA, F, RODMACG, B, DIENY, B

    “…In Pt/Co multilayers ML exchange coupled to IrMn, the magnitudes of the exchange bias field H E and coercivity H C measured along the perpendicular to film…”
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  13. 13

    Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions by Vedyayev, A., Ryzhanova, N., Strelkov, N., Titova, M., Chshiev, M., Rodmacq, B., Auffret, S., Cuchet, L., Nistor, L., Dieny, B.

    “…We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit…”
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  14. 14

    Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers by Garcia, F., Sort, J., Rodmacq, B., Auffret, S., Dieny, B.

    Published in Applied physics letters (27-10-2003)
    “…In (Pt/Co)n/FeMn multilayers, the magnitude of exchange bias, HE, can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the…”
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  15. 15

    Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers by Monso, S., Rodmacq, B., Auffret, S., Casali, G., Fettar, F., Gilles, B., Dieny, B., Boyer, P.

    Published in Applied physics letters (03-06-2002)
    “…By measuring the extraordinary Hall effect on a series of naturally oxidized Pt3 nm/Co90Fe10 0.6 nm/Al tAl samples with 0<tAl<1.2 nm, a first crossover from…”
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  16. 16

    Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions by Bandiera, S., Sousa, R. C., Marins de Castro, M., Ducruet, C., Portemont, C., Auffret, S., Vila, L., Prejbeanu, I. L., Rodmacq, B., Dieny, B.

    Published in Applied physics letters (14-11-2011)
    “…A method to switch the magnetization of the free layer in magnetic tunnel junctions with perpendicular anisotropy is demonstrated. It consists in assisting the…”
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  17. 17

    Spin injection in silicon at zero magnetic field by Grenet, L., Jamet, M., Noé, P., Calvo, V., Hartmann, J.-M., Nistor, L. E., Rodmacq, B., Auffret, S., Warin, P., Samson, Y.

    Published in Applied physics letters (19-01-2009)
    “…In this letter, we show efficient electrical spin injection into a SiGe based p - i - n light emitting diode from the remanent state of a perpendicularly…”
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    Magnetic logic using nanowires with perpendicular anisotropy by Jaworowicz, J, Vernier, N, Ferré, J, Maziewski, A, Stanescu, D, Ravelosona, D, Jacqueline, A S, Chappert, C, Rodmacq, B, Diény, B

    Published in Nanotechnology (27-05-2009)
    “…In addition to a storage function through the magnetization of nanowires, domain wall propagation can be used to trigger magnetic logic functions. Here, we…”
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