Search Results - "Robson, M.T."

InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy by Robson, M.T., LaPierre, R.R.

“…InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2)…”
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Dislocation drag processes by Galligan, J.M, McKrell, T.J, Robson, M.T

“…Experiments showing the influence of electron drag on mobile dislocations are presented. These show that dislocations overcome barriers sequentially during low…”
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Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs) by Topol, A.W., La Tulipe, D.C., Shi, L., Alam, S.M., Frank, D.J., Steen, S.E., Vichiconti, J., Posillico, D., Cobb, M., Medd, S., Patel, J., Goma, S., DiMilia, D., Robson, M.T., Duch, E., Farinelli, M., Wang, C., Conti, R.A., Canaperi, D.M., Deligianni, L., Kumar, A., Kwietniak, K.T., D'Emic, C., Ott, J., Young, A.M., Guarini, K.W., Ieong, M.

“…We present solutions to the key process technology challenges of three-dimensional (3D) integrated circuits (ICs) that enable creation of stacked device layers…”
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