Integrated photon pairs source in silicon carbide based on micro-ring resonators for quantum storage at telecom wavelengths

Integrated photon pairs source in silicon carbide based on micro-ring resonators for quantum storage at telecom wavelengths

We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful eng...

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Bibliographic Details
Published in:Scientific reports Vol. 14; no. 1; pp. 17755 - 10
Main Authors: Ramírez, P. M. C. Tavares, Gómez, J. S. S. Durán, Becerra, G. J. Rodríguez, Ramírez-Alarcón, R., Robles, M. Gómez, Salas-Montiel, R.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 01-08-2024
Nature Publishing Group
Nature Portfolio
Subjects:
639/624/1111
639/766/483/481
Bandwidths
Design
Engineering Sciences
Fabrication
Humanities and Social Sciences
multidisciplinary
Optics
Photonic
Photonics
Photons
Physics
Science
Science (multidisciplinary)
Silicon
Silicon carbide
Wave division multiplexing
Wavelength
Wavelengths
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Summary:We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼ 150 MHz, enabling the interaction with the hyperfine structure of Er 3 + ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-024-67411-0