Search Results - "Robinson, Joshua A."

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  1. 1

    Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids by Das, Saptarshi, Robinson, Joshua A, Dubey, Madan, Terrones, Humberto, Terrones, Mauricio

    Published in Annual review of materials research (01-07-2015)
    “…Interest in 2D materials and van der Waals solids is growing exponentially across various scientific and engineering disciplines owing to their fascinating…”
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    Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire by Zhang, Xiaotian, Choudhury, Tanushree H, Chubarov, Mikhail, Xiang, Yu, Jariwala, Bhakti, Zhang, Fu, Alem, Nasim, Wang, Gwo-Ching, Robinson, Joshua A, Redwing, Joan M

    Published in Nano letters (14-02-2018)
    “…A multistep diffusion-mediated process was developed to control the nucleation density, size, and lateral growth rate of WSe2 domains on c-plane sapphire for…”
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  3. 3

    Magnetic brightening and control of dark excitons in monolayer WSe2 by Zhang, Xiao-Xiao, Cao, Ting, Lu, Zhengguang, Lin, Yu-Chuan, Zhang, Fan, Wang, Ying, Li, Zhiqiang, Hone, James C., Robinson, Joshua A., Smirnov, Dmitry, Louie, Steven G., Heinz, Tony F.

    Published in Nature nanotechnology (01-09-2017)
    “…Monolayer transition metal dichalcogenide crystals, as direct-gap materials with strong light–matter interactions, have attracted much recent attention…”
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    Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers by Pan, Yi, Fölsch, Stefan, Nie, Yifan, Waters, Dacen, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Cho, Kyeongjae, Robinson, Joshua A, Feenstra, Randall M

    Published in Nano letters (14-03-2018)
    “…A two-dimensional (2D) heterobilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and…”
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  6. 6

    Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures by Lin, Yu-Chuan, Ghosh, Ram Krishna, Addou, Rafik, Lu, Ning, Eichfeld, Sarah M., Zhu, Hui, Li, Ming-Yang, Peng, Xin, Kim, Moon J., Li, Lain-Jong, Wallace, Robert M., Datta, Suman, Robinson, Joshua A.

    Published in Nature communications (19-06-2015)
    “…Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent…”
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    Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks by Sebastian, Amritanand, Pendurthi, Rahul, Kozhakhmetov, Azimkhan, Trainor, Nicholas, Robinson, Joshua A., Redwing, Joan M., Das, Saptarshi

    Published in Nature communications (17-10-2022)
    “…Artificial neural networks have demonstrated superiority over traditional computing architectures in tasks such as pattern classification and learning…”
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  9. 9

    Tungsten Ditelluride: a layered semimetal by Lee, Chia-Hui, Silva, Eduardo Cruz, Calderin, Lazaro, Nguyen, Minh An T., Hollander, Matthew J., Bersch, Brian, Mallouk, Thomas E., Robinson, Joshua A.

    Published in Scientific reports (12-06-2015)
    “…Tungsten ditelluride (WTe 2 ) is a transition metal dichalcogenide (TMD) with physical and electronic properties that make it attractive for a variety of…”
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  10. 10

    Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition by Eichfeld, Sarah M, Hossain, Lorraine, Lin, Yu-Chuan, Piasecki, Aleksander F, Kupp, Benjamin, Birdwell, A. Glen, Burke, Robert A, Lu, Ning, Peng, Xin, Li, Jie, Azcatl, Angelica, McDonnell, Stephen, Wallace, Robert M, Kim, Moon J, Mayer, Theresa S, Redwing, Joan M, Robinson, Joshua A

    Published in ACS nano (24-02-2015)
    “…Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct…”
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  11. 11

    Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS2 by Hollander, Matthew J, Liu, Yu, Lu, Wen-Jian, Li, Li-Jun, Sun, Yu-Ping, Robinson, Joshua A, Datta, Suman

    Published in Nano letters (11-03-2015)
    “…In this work, we demonstrate abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator–metal transition…”
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    Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation by Robinson, Joshua A, Hollander, Matthew, LaBella, Michael, Trumbull, Kathleen A, Cavalero, Randall, Snyder, David W

    Published in Nano letters (14-09-2011)
    “…We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer…”
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  14. 14

    Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers by Lin, Yu‐Chuan, Torsi, Riccardo, Geohegan, David B., Robinson, Joshua A., Xiao, Kai

    Published in Advanced science (01-05-2021)
    “…Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device…”
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  15. 15

    Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS2‑WSe2 Heterobilayers by Waters, Dacen, Nie, Yifan, Lüpke, Felix, Pan, Yi, Fölsch, Stefan, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Wang, Chong, Lv, Hongyan, Cho, Kyeongjae, Xiao, Di, Robinson, Joshua A, Feenstra, Randall M

    Published in ACS nano (23-06-2020)
    “…It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment…”
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  16. 16

    Observation of Rich Defect Dynamics in Monolayer MoS2 by Ravichandran, Harikrishnan, Knobloch, Theresia, Pannone, Andrew, Karl, Alexander, Stampfer, Bernhard, Waldhoer, Dominic, Zheng, Yikai, Sakib, Najam U, Karim Sadaf, Muhtasim Ul, Pendurthi, Rahul, Torsi, Riccardo, Robinson, Joshua A., Grasser, Tibor, Das, Saptarshi

    Published in ACS nano (08-08-2023)
    “…Defects play a pivotal role in limiting the performance and reliability of nanoscale devices. Field-effect transistors (FETs) based on atomically thin…”
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  17. 17

    The impact of graphene properties on GaN and AlN nucleation by Al Balushi, Zakaria Y., Miyagi, Takahira, Lin, Yu-Chuan, Wang, Ke, Calderin, Lazaro, Bhimanapati, Ganesh, Redwing, Joan M., Robinson, Joshua A.

    Published in Surface science (01-04-2015)
    “…The use of graphene as a template layer for the heteroepitaxy of III-nitrides (GaN and AlN) has gained interest due to the hexagonal arrangement of the sp2…”
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  18. 18

    Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS2 by Cochrane, Katherine A., Lee, Jun-Ho, Kastl, Christoph, Haber, Jonah B., Zhang, Tianyi, Kozhakhmetov, Azimkhan, Robinson, Joshua A., Terrones, Mauricio, Repp, Jascha, Neaton, Jeffrey B., Weber-Bargioni, Alexander, Schuler, Bruno

    Published in Nature communications (15-12-2021)
    “…Atomic spin centers in 2D materials are a highly anticipated building block for quantum technologies. Here, we demonstrate the creation of an effective…”
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  19. 19

    Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene by Lin, Yu-Chuan, Chang, Chih-Yuan S, Ghosh, Ram Krishna, Li, Jie, Zhu, Hui, Addou, Rafik, Diaconescu, Bogdan, Ohta, Taisuke, Peng, Xin, Lu, Ning, Kim, Moon J, Robinson, Jeremy T, Wallace, Robert M, Mayer, Theresa S, Datta, Suman, Li, Lain-Jong, Robinson, Joshua A

    Published in Nano letters (10-12-2014)
    “…Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an…”
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  20. 20

    Characterization of Graphene Films and Transistors Grown on Sapphire by Metal-Free Chemical Vapor Deposition by Fanton, Mark A, Robinson, Joshua A, Puls, Conor, Liu, Ying, Hollander, Matthew J, Weiland, Brian E, LaBella, Michael, Trumbull, Kathleen, Kasarda, Richard, Howsare, Casey, Stitt, Joseph, Snyder, David W

    Published in ACS nano (25-10-2011)
    “…We present a novel method for the direct metal-free growth of graphene on sapphire that yields high quality films comparable to that of graphene grown on SiC…”
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