Search Results - "Robins, L.H." :: Katalog Arama

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Growth defects in diamond films by Shechtman, D., Hutchison, J.L., Robins, L.H., Farabaugh, E.N., Feldman, A.

Published in Journal of materials research (01-03-1993)
“…Growth defects in diamond films grown by plasma-assisted chemical vapor deposition (CVD) were studied by high resolution electron microscopy. Several features…”

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Sputtered amorphous carbon nitride films by Kreider, K.G., Tarlov, M.J., Gillen, G.J., Poirier, G.E., Robins, L.H., Ives, L.K., Bowers, W.D., Marinenko, R.B., Smith, D.T.

Published in Journal of materials research (01-12-1995)
“…The recent announcement of the synthesis of C3N4 has increased interest in this unique material. Carbon nitride may have several useful applications as wear…”

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AlGaAs composition measurements from in situ optical reflectance by Bertness, K.A., Armstrong, J.T., Marinenko, R.B., Robins, L.H., Paul, A.J., Pellegrino, J.G., Amirtharaj, P.M., Chandler-Horowitz, D.

Published in 2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497) (2000)
“…We describe preliminary determinations of AlGaAs layer composition using in situ optical reflectance spectroscopy (ORS) data. RHEED oscillations are used to…”

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Toteng, a Late Stone Age Site along the Nghabe River, Ngamiland by ROBINS, L.H.

Published in Botswana notes and records (01-01-1984)

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Deposition of Diamond Films in a Closed Hot Filament CVD System by Lai, Guan-Ren, Farabaugh, E N, Feldman, A, Robins, L H

Published in Journal of research of the National Institute of Standards and Technology (01-01-1995)
“…A closed system hot filament chemical vapor deposition (CVD) reactor has been used to deposit diamond films on silicon substrates. A fixed charge of hydrogen…”

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Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films by Robins, L.H., Armstrong, J.T., Marinenko, R.B., Vaudin, M.D., Bouldin, C.E., Woicik, J.C., Paul, A.J., Thurber, W.R., Miyano, K.E., Parker, C.A., Roberts, J.C., Bedair, S.M., Piner, E.L., Reed, M.J., El-Masry, N.A., Donovan, S.M., Pearton, S.J.

Published in 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) (2000)
“…The structural and optical properties of indium gallium nitride (In/sub x/Ga/sub 1-x/N) films with 0.04<x<0.47, grown by metal-organic chemical vapor…”

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Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:Zn by ROBINS, L. H, TAYLOR, P. C, KENNEDY, T. A

Published in Physical review. B, Condensed matter (15-12-1988)

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