Search Results - "Robin, Ivan C."

New Field Effect Deep‐UV μLEDs Development by Rottner, Jean, Haas, Helge, Largeron, Christophe, Vaufrey, David, Robin, Ivan. C.

“…Mg‐doped AlGaN layers are needed for deep‐ultraviolet light emitting diodes (DUV‐LEDs). However because of the high activation energy of Mg in such layers, the…”
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Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211) by Badano, Giacomo, Gergaud, Patrice, Robin, Ivan C., Baudry, Xavier, Amstatt, Benoît, Gemain, Fréderique

“…We have used x-ray diffraction to assess the thickness dependence of strain in molecular-beam epitaxial (MBE) CdTe(211)/Ge(211). For 25-nm-thick layers, we…”
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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission by Alam, Saiful, Sundaram, Suresh, li, Xin, Jamroz, Miryam E., El Gmili, Youssef, Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

“…The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi‐bulk InGaN buffer. From…”
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Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells by Alam, Saiful, Sundaram, Suresh, Haas, Helge, Li, Xin, El Gmili, Youssef, Jamroz, Miryam E., Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

“…We report on the optimization of p‐GaN layers for high indium (In) content InGaN applications by optimizing temperature, precursor CP2Mg flow rate and III/V…”
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In Situ Spectroscopic Ellipsometry of Rough Surfaces: Application to CdTe(211)B/Ge(211) Grown by Molecular-Beam Epitaxy by Badano, Giacomo, Baudry, Xavier, Robin, Ivan C.

“…The surface morphology of the B-face of (211) cadmium telluride on germanium (211) is investigated by atomic force microscopy (AFM) and generalized…”
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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission: InGaN multiple quantum well (MQW) by Alam, Saiful, Sundaram, Suresh, li, Xin, Jamroz, Miryam E., El Gmili, Youssef, Robin, Ivan C., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells: p-contact performance for indium rich InGaN based LEDs and solar cells by Alam, Saiful, Sundaram, Suresh, Haas, Helge, Li, Xin, El Gmili, Youssef, Jamroz, Miryam E., Robin, Ivan C., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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