Search Results - "Robb, S.P."

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  1. 1

    Reducing voltage rating and cost of vehicle power systems with a new transient voltage suppression technology by Shen, Z.J., Robb, F.Y., Robb, S.P., Briggs, D.

    Published in IEEE transactions on vehicular technology (01-11-2003)
    “…Power electronics plays a critical role in modern vehicle systems. The voltage rating of vehicle power electronics is predominantly determined by the transient…”
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    Journal Article
  2. 2

    A dual-voltage self-clamped IGBT for automotive ignition applications by Shen, Z.J., Robb, S.P.

    Published in IEEE electron device letters (01-05-2001)
    “…Self-clamped inductive switching (SCIS) energy capability is a critical parameter of device performance for insulated gate bipolar transistors (IGBTs) used in…”
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    Journal Article
  3. 3

    Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBTs by Shen, Z.J., Briggs, D., Robb, S.P.

    Published in IEEE electron device letters (01-03-2000)
    “…Self-clamped inductive switching (SCIS) energy capability is the most important device parameter for insulated gate bipolar transistors (IGBTs) used in…”
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    Journal Article
  4. 4

    Design and characterization of high-voltage self-clamped IGBT's by Shen, Z.J., Briggs, D., Robb, S.P.

    Published in IEEE electron device letters (01-08-1999)
    “…A new concept of field limiting ring (FLR) with variable ring widths is proposed for designing a high-voltage collector-gate clamped IGBT. An insulated gate…”
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    Journal Article
  5. 5

    A study on a dual-voltage self-clamped IGBT for automotive ignition applications by Shen, Z.J., Robb, S.P.

    “…Self-clamped Inductive Switching (SCIS) energy capability is a critical parameter of device performance for IGBTs used in automotive ignition applications. In…”
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    Conference Proceeding
  6. 6

    High voltage clamped IGBT for automotive ignition applications by Shen, Z.J., Robb, S.P.

    “…A new field-limiting-ring (FLR) concept with variable ring widths is proposed for designing a high voltage collector-gate clamped IGBT. An IGBT based on the…”
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    Conference Proceeding
  7. 7

    Design and modeling of the 600 V IGBT with emitter ballast resistor by Shen, Z.J., Robb, S.P.

    “…Summary form only given. Device performance of IGBT's has been improved rapidly in recent years, particularly regarding the trade-off between its on-state…”
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    Conference Proceeding
  8. 8

    A new current limit circuit for smart discrete devices by Shen, Z.J., Robb, S.P.

    “…A new current limit circuit with a sensitivity level down to approximately 100 mV is proposed in this paper. The new circuit has been integrated with a…”
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    Conference Proceeding
  9. 9

    Monolithic integration of the vertical IGBT and intelligent protection circuits by Shen, Z.J., Robb, S.P.

    “…In this paper, we have developed a new smart discrete technology to monolithically integrate the high voltage vertical IGBT with low-voltage NMOS protection…”
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    Conference Proceeding
  10. 10

    Recent advances in power integrated circuits with high level integration by Robb, S.P., Sutor, J.L.

    “…This paper describes some of the latest advances in the field of power integrated circuits. The recent market forces and applications that drive the power IC…”
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    Conference Proceeding
  11. 11

    A solid state current sense for high current epi base power transistors by Wrathall, R.S., Robb, S.P.

    “…This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current…”
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    Conference Proceeding
  12. 12

    Current sensing in IGBTs for short-circuit protection by Robb, S.P., Taomoto, A.A., Tu, S.L.

    “…Short circuit protection can be provided for IGBTs by using a current-sensing scheme. The performance and accuracy of integrated current sensors on IGBTs can…”
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    Conference Proceeding
  13. 13

    Design and characterization of the 600 V IGBT with monolithic over-voltage protection by Shen, Z.J., Robb, S.P., Cheng, C.

    “…A 600 V IGBT with a monolithic overvoltage protection circuit has been developed to provide protection against overvoltage stress. The device operates under…”
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    Conference Proceeding
  14. 14

    Load dump protection in 42 V automotive electrical distribution systems by Shen, Z.J., Robb, S.P., Robb, F.Y., Fuchs, M., Berels, D., Hampton, K.

    “…Load dump protection in 42 V automotive systems can be provided by combining the use of both active control and passive transient voltage suppression devices…”
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    Conference Proceeding
  15. 15

    Smartdiscretes, new products for automotive applications by Robb, S.P., Sutor, J.L., Terry, L.E.

    Published in Automotive Power Electronics (1989)
    “…Device structures and characteristics for three Smartdiscretes which have automotive applications are presented. Smartdiscretes are discrete power devices…”
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    Conference Proceeding
  16. 16

    A novel isolation structure for SMARTpower ICs by Sutor, J.L., Boland, B., Robb, S.P., Terry, L.

    “…This paper describes a new isolation technology for SMARTpower TM devices. The structure allows a vertical power device to be integrated with low voltage…”
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    Conference Proceeding
  17. 17

    Industry trends in power integrated circuits by Robb, S.P., Sutor, J.L., Terry, L.

    “…The authors consider some of the recent trends in power integrated circuits. They discuss the novel processes and device configurations which the semiconductor…”
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    Conference Proceeding
  18. 18

    IGBTs designed for automotive ignition systems by Mamileti, L., Robb, S.P., Shen, Z.J., Taomoto, A.A.

    “…In recent years the IGBT has become the device of choice for driving ignition coils. The IGBT is a high-voltage, high-current device that is well suited to…”
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    Conference Proceeding
  19. 19