Search Results - "Ritter, Dan"

Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition by Krylov, Igor, Xu, Xianbin, Qi, Yuanshen, Weinfeld, Kamira, Korchnoy, Valentina, Eizenberg, Moshe, Ritter, Dan

“…The authors deposited titanium nitride (TiN) films by plasma-enhanced atomic layer deposition on various types of amorphous, polycrystalline, and single…”
Get full text

Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors by Krylov, Igor, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan

“…Annealing of Ni/Al2O3/InGaAs structures results in a significant increase of the leakage current. The same treatment of Au/Ti/Al2O3/InGaAs structures results…”
Get full text

Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces by Krylov, Igor, Kornblum, Lior, Gavrilov, Arkady, Ritter, Dan, Eizenberg, Moshe

“…Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A ) for weak…”
Get full text

Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface by Krylov, Igor, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan

“…Al2O3/In0.53Ga0.47As gate stacks were fabricated using different concentrations of NH4OH as a pre-deposition treatment. Increased NH4OH concentrations…”
Get full text

Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures by Mehari, Shlomo, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan

“…We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations…”
Get full text

Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements by Mehari, Shlomo, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan

“…We apply the gated Hall method to obtain the density of trap distribution, D it (E), at the insulator/III-N interface of a heterostructure field effect…”
Get full text

Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method by Krylov, Igor, Eizenberg, Moshe, Ritter, Dan

“…The conventional thickness series method for the determination of the dielectric constant of silicon based gate stacks is not applicable for InGaAs based gate…”
Get full text

Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment by Krylov, Igor, Gavrilov, Arkady, Ritter, Dan, Eizenberg, Moshe

“…Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition…”
Get full text

Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As by Mehari, Shlomo, Gavrilov, Arkady, Cohen, Shimon, Shekhter, Pini, Eizenberg, Moshe, Ritter, Dan

“…The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In0.53Ga0.47As was measured. Nearly ideal plots…”
Get full text

Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell by Greenberg, Ya’akov, Kelrich, Alexander, Cohen, Shimon, Kar-Narayan, Sohini, Ritter, Dan, Calahorra, Yonatan

“…Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is…”
Get full text

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors by Mehari, Shlomo Solomon, Yalon, Eilam, Gavrilov, Arkady, Mistele, David, Bahir, Gad, Eizenberg, Moshe, Ritter, Dan

“…We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor…”
Get full text

Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD-Compact Model Approach by Beleniotis, Petros, Zervos, Christos, Krause, Sascha, Chevtchenko, Serguei, Ritter, Dan, Rudolph, Matthias

“…This article proposes a novel modeling approach for the analysis of the microwave power performance of GaN HEMTs. By combining Technology Computer-Aided Design…”
Get full text

Two-dimensional carrier gas at a polar interface without surface band gap states: A first principles perspective by Brivio, Federico, Rappe, Andrew M., Kronik, Leeor, Ritter, Dan

“…We present first principles calculations of the interface between GaN and strained AlN, using a slab model in which polarization is compensated via surface…”
Get full text

Growth of large diameter pure phase wurtzite GaP nanowires by a two-step axial-radial growth approach by Halder, Nripendra N., Cohen, Shimon, Gershoni, David, Ritter, Dan

“…Direct bandgap wurzite (WZ) GaP nanowires (NWs) are projected as a non-nitride solution to the green gap in the LED technology. Here, we report on the growth…”
Get full text

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth by Calahorra, Yonatan, Kelrich, Alexander, Cohen, Shimon, Ritter, Dan

“…The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel…”
Get full text

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results by Yalon, Eilam, Riess, Ilan, Ritter, Dan

“…The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament…”
Get full text

Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling by Bouscher, Shlomi, Panna, Dmitry, Balasubramanian, Krishna, Cohen, Shimon, Ritter, Dan, Hayat, Alex

“…We demonstrate enhanced Andreev reflection in a Nb/InGaAs/InP-based superconductor-semiconductor hybrid device resulting in increased Cooper-pair injection…”
Get full text

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors by Tripathi, Durgesh C., Uren, Michael J., Ritter, Dan

“…Buffer traps in GaN RF heterostructure field-effect transistors (HFETs) provide a high dc output resistance on one hand but induce the current collapse effect…”
Get full text

Epitaxial Nanoflag Photonics: Semiconductor Nanoemitters Grown with Their Nanoantennas by Sorias, Ofir, Kelrich, Alexander, Gladstone, Ran, Ritter, Dan, Orenstein, Meir

“…Semiconductor nanostructures are desirable for electronics, photonics, quantum circuitry, and energy conversion applications as well as for fundamental…”
Get full text

InP Nanoflag Growth from a Nanowire Template by in Situ Catalyst Manipulation by Kelrich, Alexander, Sorias, Ofir, Calahorra, Yonatan, Kauffmann, Yaron, Gladstone, Ran, Cohen, Shimon, Orenstein, Meir, Ritter, Dan

“…Quasi-two-dimensional semiconductor materials are desirable for electronic, photonic, and energy conversion applications as well as fundamental science. We…”
Get full text