Search Results - "Rispal, Lorraine"

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    Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High- \kappa Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio by Rispal, L., Schwalke, U.

    Published in IEEE electron device letters (01-12-2008)
    “…In this letter, we report on measurements of carbon nanotube (CNT) field-effect transistors with high on/off ratio to be used as nonvolatile memory cells…”
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    Journal Article
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    Carbon: The future of nanoelectronics by Rispal, L., Schwalke, U.

    “…In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon…”
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    Conference Proceeding
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    Nanoelectronics: From silicon to graphene by Schwalke, U., Wessely, J., Wessely, F., Keyn, M., Rispal, L.

    “…In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon…”
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    Conference Proceeding
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    Structural and electrical characterization of carbon nanotube field-effect transistors fabricated by novel self-aligned growth method by Rispal, L., Schwalke, U.

    “…In this work, we report on the fabrication of carbon nanotube field-effect transistors (CNTFETs) using a low-cost process based on chemical vapor deposition…”
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    Conference Proceeding
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    Feasibility study on in situ CCVD grown CNTs for field-effect power device applications by Keyn, M., Wessely, P. J., Wessely, F., Rispal, L., Palm, J., Schwalke, U.

    “…In this paper we investigate the feasibility of carbon nanotubes (CNTs) for power applications. On the basis of a process which fabricates thousands of carbon…”
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    Conference Proceeding