Search Results - "Rip, Jens"

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  1. 1

    Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants by Pacco, Antoine, Tao, Zheng, Rip, Jens, van Dorp, Dennis, Philipsen, Harold, Holsteyns, Frank

    Published in Nanoscale research letters (19-08-2019)
    “…Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for…”
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    Journal Article
  2. 2

    Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates by Delabie, Annelies, Sioncke, Sonja, Rip, Jens, Van Elshocht, Sven, Pourtois, Geoffrey, Mueller, Matthias, Beckhoff, Burkhard, Pierloot, Kristine

    “…In this work, we have studied the TMA/H2O (TMA = Al(CH3)3) atomic layer deposition (ALD) of Al2O3 on hydroxyl (OH) and thiol (SH) terminated semiconductor…”
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    Journal Article
  3. 3

    Chemical Vapor Deposition of Azidoalkylsilane Monolayer Films by Vos, Rita, Rolin, Cedric, Rip, Jens, Conard, Thierry, Steylaerts, Tim, Cabanilles, Maria Vidal, Levrie, Karen, Jans, Karolien, Stakenborg, Tim

    Published in Langmuir (30-01-2018)
    “…N3-functionalized monolayers on silicon wafer substrates are prepared via the controlled vapor-phase deposition of 11-azidoundecyltrimethoxysilanes at reduced…”
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    Journal Article
  4. 4

    Metals in the active site of native protein phosphatase-1 by Heroes, Ewald, Rip, Jens, Beullens, Monique, Van Meervelt, Luc, De Gendt, Stefan, Bollen, Mathieu

    Published in Journal of inorganic biochemistry (01-08-2015)
    “…Protein phosphatase-1 (PP1) is a major protein Ser/Thr phosphatase in eukaryotic cells. Its activity depends on two metal ions in the catalytic site, which…”
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    Journal Article
  5. 5

    Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge by Loo, Roger, Souriau, Laurent, Ong, Patrick, Kenis, Karine, Rip, Jens, Storck, Peter, Buschhardt, Thomas, Vorderwestner, Martin

    Published in Journal of crystal growth (01-06-2011)
    “…Further improving complementary metal oxide semiconductor (CMOS) performance beyond the 15 nm generation likely requires the use of high mobility materials…”
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    Journal Article
  6. 6

    Mechanisms for the Trimethylaluminum Reaction in Aluminum Oxide Atomic Layer Deposition on Sulfur Passivated Germanium by Delabie, Annelies, Sioncke, Sonja, Rip, Jens, Van Elshocht, Sven, Caymax, Matty, Pourtois, Geoffrey, Pierloot, Kristine

    Published in Journal of physical chemistry. C (08-09-2011)
    “…Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic…”
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    Journal Article
  7. 7

    Wet Cu passivation for high throughput fluxless Thermal Compression Bonding of Cu-Sn μbumps for Die-to-Wafer stacking by Rip, Jens, Derakhshandeh, Jaber, Negishi, Ryo, Tomatsu, Itsuro, Cuypers, Dieter H., Beyne, Eric

    “…In this paper we demonstrate the application of a formulated wet passivation on scaled Cu micro-bumps before Thermal Compression Bonding (TCB)process for 3D…”
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    Conference Proceeding
  8. 8

    Biocompatibility assessment of advanced wafer-level based chip encapsulation by Dy, E, Vos, R, Rip, J, la Manna, A, Op de Beeck, M

    “…Next generation implantable microsystem-based medical devices will have different packaging requirements than current implantable devices such as pace makers…”
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    Conference Proceeding
  9. 9

    Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments by Hellin, D., De Gendt, S., Rip, J., Vinckier, C.

    “…In this paper, a number of case studies on the analysis of novel metallic contaminants on conventional and alternative substrates using the technique of total…”
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    Magazine Article