Search Results - "Rimini, Emanuele"

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    Ion irradiation and defect formation in single layer graphene by Compagnini, Giuseppe, Giannazzo, Filippo, Sonde, Sushant, Raineri, Vito, Rimini, Emanuele

    Published in Carbon (New York) (01-11-2009)
    “…Ion irradiation by 500 keV C + ions has been used to introduce defects into graphene sheets deposited on SiO 2 in a controlled way. The combined use of Raman…”
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    Journal Article
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    Influence of hydrofluoric acid treatment on electroless deposition of Au clusters by Milazzo, Rachela G, Mio, Antonio M, D'Arrigo, Giuseppe, Smecca, Emanuele, Alberti, Alessandra, Fisichella, Gabriele, Giannazzo, Filippo, Spinella, Corrado, Rimini, Emanuele

    “…The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid…”
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    Journal Article
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    Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy by Giannazzo, Filippo, Sonde, Sushant, Rimini, Emanuele, Raineri, Vito

    Published in Nanoscale research letters (31-01-2011)
    “…In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free…”
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    Journal Article
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    Nucleation and growth of NiSi from Ni2Si transrotational domains by Alberti, Alessandra, Spinella, Corrado, La Magna, Antonino, Rimini, Emanuele

    Published in Applied physics letters (29-01-2007)
    “…The phase transition from Ni2Si to NiSi transrotational structures was studied in terms of incubation (t0) and characteristic (τ) times, i.e. the time required…”
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    Journal Article
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    Critical nickel thickness to form silicide transrotational structures on [001] silicon by Alberti, Alessandra, Bongiorno, Corrado, Rimini, Emanuele, Grimaldi, Maria Grazia

    Published in Applied physics letters (04-09-2006)
    “…The effect of the sputtered Ni layer thickness (7–14nm) on the silicide phase transition was studied at 260°C. In 7-nm-thick layers, the complete mixing of Ni…”
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    Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si by Alberti, Alessandra, Bongiorno, Corrado, Alippi, Paola, La Magna, Antonino, Spinella, Corrado, Rimini, Emanuele

    “…The formation of pseudoepitaxial transrotational structures has been observed during the early stage of the reaction of thin Ni layers on [001] Si substrates…”
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    Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon by Alberti, Alessandra, Bongiorno, Corrado, Cafra, Brunella, Mannino, Giovanni, Rimini, Emanuele, Metzger, Till, Mocuta, Cristian, Kammler, Thorsten, Feudel, Thomas

    “…In a system consisting of two different lattices, structural stability is ensured when an epitaxial relationship occurs between them and allows the system to…”
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    Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene by Giannazzo, Filippo, Sonde, Sushant, Nigro, Raffaella Lo, Rimini, Emanuele, Raineri, Vito

    Published in Nano letters (09-11-2011)
    “…Recently, giant carrier mobility μ (>105 cm2 V–1 s–1) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene…”
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    Journal Article
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    Ion beam induced transient amorphous nucleation in silicon by Spinella, Corrado, Privitera, Stefania M.S., Mio, Antonio Massimiliano, Rimini, Emanuele

    “…Ion-beam amorphization of crystalline silicon is reviewed. All the peculiar features of the process (temperature effect, incubation fluence, superlinear…”
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    Journal Article
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    New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition by Milazzo, Rachela G., Privitera, Stefania M.S., Scalese, Silvia, Mirabella, Salvatore, Bongiorno, Corrado, Lombardo, Salvatore A., Rimini, Emanuele

    “…Platinum nanostructures are of large interest because of their electrocatalytic properties, enhanced by the high surface/volume ratio, and find applications in…”
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    Formation, Morphology, and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC by Milazzo, Rachela G, Privitera, Stefania, Litrico, Grazia, Scalese, Silvia, Mirabella, Salvatore, La Via, Francesco, Lombardo, Salvatore, Rimini, Emanuele

    Published in Journal of physical chemistry. C (02-03-2017)
    “…3C-SiC layers (7 and 15 μm thick), epitaxially grown on silicon, were covered with gold nanoparticles by immersion in a solution containing HF and KAuCl4. The…”
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    Journal Article
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    Transient crystal grain nucleation in As doped amorphous silicon by Mannino, Giovanni, Spinella, Corrado, Ruggeri, Rosa, Mio, Antonio, Rimini, Emanuele

    Published in Materials letters (01-07-2014)
    “…Crystallization of amorphised thin silicon layer on insulator (SOI), and subsequently doped by As implantation has been investigated after furnace annealing at…”
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    Journal Article
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    Electrically Trimmable Phase Change Ge sub(2)Sb sub(2)Te sub(5) Resistors With Tunable Temperature Coefficient of Resistance by Privitera, Stefania, D'Arrigo, Giuseppe, Mio, Antonio M, Piluso, Nicolo, Via, Francesco La, Rimini, Emanuele

    Published in IEEE transactions on electron devices (01-08-2014)
    “…Electrically trimmable resistors have been manufactured using the phase change alloy Ge sub(2)Sb sub(2)Te sub(5). High resistivity values (about 1 m \(\Omega…”
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    Journal Article
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    Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance by Privitera, Stefania, D'Arrigo, Giuseppe, Mio, Antonio M., Piluso, Nicolo, La Via, Francesco, Rimini, Emanuele

    Published in IEEE transactions on electron devices (01-08-2014)
    “…Electrically trimmable resistors have been manufactured using the phase change alloy Ge 2 Sb 2 Te 5 . High resistivity values (about 1 mΩ cm) and almost zero…”
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    Journal Article
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    Investigation of graphene-SiC interface by nanoscale electrical characterization by Sonde, Sushant, Giannazzo, Filippo, Raineri, Vito, Rimini, Emanuele

    Published in Physica status solidi. B. Basic research (01-04-2010)
    “…We have carried out an investigation of graphene/4H‐SiC (0001) interface by nanoscale current transport measurements. Graphene was deposited by mechanical…”
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    Journal Article Conference Proceeding
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    Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate by Sonde, Sushant, Giannazzo, Filippo, Raineri, Vito, Rimini, Emanuele

    Published in Physica status solidi. B. Basic research (01-04-2010)
    “…Single layers of graphene obtained by mechanical exfoliation of highly oriented pyrolytic graphite and deposited on a SiO2/n+‐Si substrate were irradiated with…”
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    Journal Article Conference Proceeding
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