Search Results - "Rimini, Emanuele"
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1
Ion irradiation and defect formation in single layer graphene
Published in Carbon (New York) (01-11-2009)“…Ion irradiation by 500 keV C + ions has been used to introduce defects into graphene sheets deposited on SiO 2 in a controlled way. The combined use of Raman…”
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2
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
Published in Scientific reports (01-04-2016)“…Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the…”
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3
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters
Published in Beilstein journal of nanotechnology (2017)“…The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid…”
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4
Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy
Published in Nanoscale research letters (31-01-2011)“…In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free…”
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5
Nucleation and growth of NiSi from Ni2Si transrotational domains
Published in Applied physics letters (29-01-2007)“…The phase transition from Ni2Si to NiSi transrotational structures was studied in terms of incubation (t0) and characteristic (τ) times, i.e. the time required…”
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Critical nickel thickness to form silicide transrotational structures on [001] silicon
Published in Applied physics letters (04-09-2006)“…The effect of the sputtered Ni layer thickness (7–14nm) on the silicide phase transition was studied at 260°C. In 7-nm-thick layers, the complete mixing of Ni…”
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7
Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si
Published in Acta crystallographica. Section B, Structural science (01-10-2006)“…The formation of pseudoepitaxial transrotational structures has been observed during the early stage of the reaction of thin Ni layers on [001] Si substrates…”
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8
Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
Published in Acta crystallographica. Section B, Structural science (01-10-2005)“…In a system consisting of two different lattices, structural stability is ensured when an epitaxial relationship occurs between them and allows the system to…”
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9
Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene
Published in Nano letters (09-11-2011)“…Recently, giant carrier mobility μ (>105 cm2 V–1 s–1) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene…”
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10
Ion beam induced transient amorphous nucleation in silicon
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-01-2020)“…Ion-beam amorphization of crystalline silicon is reviewed. All the peculiar features of the process (temperature effect, incubation fluence, superlinear…”
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11
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition
Published in The Journal of physics and chemistry of solids (01-01-2021)“…Platinum nanostructures are of large interest because of their electrocatalytic properties, enhanced by the high surface/volume ratio, and find applications in…”
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12
Formation, Morphology, and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC
Published in Journal of physical chemistry. C (02-03-2017)“…3C-SiC layers (7 and 15 μm thick), epitaxially grown on silicon, were covered with gold nanoparticles by immersion in a solution containing HF and KAuCl4. The…”
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13
Transient crystal grain nucleation in As doped amorphous silicon
Published in Materials letters (01-07-2014)“…Crystallization of amorphised thin silicon layer on insulator (SOI), and subsequently doped by As implantation has been investigated after furnace annealing at…”
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14
Electrically Trimmable Phase Change Ge sub(2)Sb sub(2)Te sub(5) Resistors With Tunable Temperature Coefficient of Resistance
Published in IEEE transactions on electron devices (01-08-2014)“…Electrically trimmable resistors have been manufactured using the phase change alloy Ge sub(2)Sb sub(2)Te sub(5). High resistivity values (about 1 m \(\Omega…”
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15
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance
Published in IEEE transactions on electron devices (01-08-2014)“…Electrically trimmable resistors have been manufactured using the phase change alloy Ge 2 Sb 2 Te 5 . High resistivity values (about 1 mΩ cm) and almost zero…”
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16
Investigation of graphene-SiC interface by nanoscale electrical characterization
Published in Physica status solidi. B. Basic research (01-04-2010)“…We have carried out an investigation of graphene/4H‐SiC (0001) interface by nanoscale current transport measurements. Graphene was deposited by mechanical…”
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Journal Article Conference Proceeding -
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Correction: Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
Published in Scientific reports (16-08-2016)“…Scientific Reports 6: Article number: 23843; published online: 01 April 2016; updated: 16 August 2016 In this Article, Stefania Privitera and Emanuele Rimini…”
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Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate
Published in Physica status solidi. B. Basic research (01-04-2010)“…Single layers of graphene obtained by mechanical exfoliation of highly oriented pyrolytic graphite and deposited on a SiO2/n+‐Si substrate were irradiated with…”
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Journal Article Conference Proceeding -
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Publisher's Note: "Nucleation and growth of NiSi from Ni 2 Si transrotational domains" [Appl. Phys. Lett. 90, 053507 (2007)]
Published in Applied physics letters (13-03-2007)Get full text
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Publisher's Note: “Nucleation and growth of NiSi from Ni2Si transrotational domains” [Appl. Phys. Lett. 90, 053507 (2007)]
Published in Applied physics letters (12-03-2007)Get full text
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