Search Results - "Rim, K."

Observation of Graphene Bubbles and Effective Mass Transport under Graphene Films by Stolyarova, E, Stolyarov, D, Bolotin, K, Ryu, S, Liu, L, Rim, K. T, Klima, M, Hybertsen, M, Pogorelsky, I, Pavlishin, I, Kusche, K, Hone, J, Kim, P, Stormer, H. L, Yakimenko, V, Flynn, G

“…Mechanically exfoliated graphene mounted on a SiO2/Si substrate was subjected to HF/H2O etching or irradiation by energetic protons. In both cases gas was…”
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Density Function-Based Trust Region Algorithm for Approximating Pareto Front of Black-Box Multiobjective Optimization Problems by Ju, K. H., O, Y. B., Rim, K.

“…In this paper, we consider a black-box multiobjective optimization problem, whose objective functions are computationally expensive. We propose a density…”
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Influence of copper crystal surface on the CVD growth of large area monolayer graphene by Zhao, L., Rim, K.T., Zhou, H., He, R., Heinz, T.F., Pinczuk, A., Flynn, G.W., Pasupathy, A.N.

“…We study the influence of the surface structure of copper single crystals on the growth of large area monolayer graphene by chemical vapor deposition (CVD) in…”
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Fabrication and analysis of deep submicron strained-Si n-MOSFET's by Rim, K., Hoyt, J.L., Gibbons, J.F.

“…Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures were designed…”
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Predictors of failure to detect early hepatocellular carcinoma in patients with chronic hepatitis B who received regular surveillance by Chon, Y. E., Jung, K. S., Kim, M.‐J., Choi, J.‐Y., An, C., Park, J. Y., Ahn, S. H., Kim, B. K., Kim, S. U., Park, H., Hwang, S. K., Rim, K. S., Han, K.‐H., Kim, D. Y.

“…Summary Background A proportion of chronic hepatitis B (CHB) patients are diagnosed with advanced hepatocellular carcinoma (HCC) despite regular surveillance…”
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Measurement of the effect of self-heating in strained-silicon MOSFETs by Jenkins, K.A., Rim, K.

“…The self-heating of strained-silicon MOSFETs is demonstrated experimentally. Output characteristics measured by a pulse technique, in which self-heating is…”
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Device Design and Reliability of GAA MBCFET by Kang, M., Chang, M., Park, Y., Noh, C., Hong, S. H., Park, B., Park, Y. H, Jung, Y.C, Lim, W.S., Kim, G.H., Lee, Y., Yang, H., Shin, D., Yang, J. G., Cho, K. H., Jeong, W. C., Cho, H.-J, Kwon, W. H., Kim, D.W., Rim, K., Song, J. H.

“…Compared to FinFET, GAA MBCFET has significant structural differences such as nanosheet channel with variable width and dielectric spacer between inner gate…”
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Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint by Fukutome, H., Suh, K., Kim, W., Moriyama, Y., Kang, S., Eom, B., Kim, J., Yoon, C., Kwon, W., Chung, Y., Nam, Y., Kim, Y., Park, S., Park, J., Cho, H. -J., Rim, K., Kwon, S. D.

“…We have comprehensively studied feasibility of single-fin (1-fin) devices from viewpoint of scaling switching energy (CV 2 ) and device footprint width, which…”
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Holistic technology optimization and key enablers for 7nm mobile SoC by Song, S. C., Xu, J., Mojumder, N. N., Rim, K., Yang, D., Bao, J., Zhu, J., Wang, J., Badaroglu, M., Machkaoutsan, V., Narayanasetti, P., Bucki, B., Fischer, J., Yeap, Geoffrey

“…We systematically investigated the impact of R and C scaling to 7nm node (N7) by accounting for FEOL and BEOL holistically. Speed-power performance of plainly…”
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Strained Si surface channel MOSFETs for high-performance CMOS technology by Rim, K.

“…Biaxial tension enhances in-plane transport of both electrons and holes in silicon, and can improve the current drive of CMOS devices independent of geometric…”
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The revolution in SiGe: impact on device electronics by Harame, D.L, Koester, S.J, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, J.S, Greenberg, D, Joseph, A, Anderson, F, Rieh, J.-S, Onge, S.A.S.T, Coolbaugh, D, Ramachandran, V, Cressler, J.D, Subbanna, S

“…SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The…”
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Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy by Koester, S. J., Rim, K., Chu, J. O., Mooney, P. M., Ott, J. A., Hargrove, M. A.

“…The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the…”
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Influence of the proportion of wood on the thermal and mechanical performances of clay-cement-wood composites by Al Rim, K., Ledhem, A., Douzane, O., Dheilly, R.M., Queneudec, M.

“…The introduction of wood aggregates to produce low density composites is an interesting technique allowing the reuse of wastes from both the aggregate-mining…”
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A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs by Seong Dong Kim, Narasimha, S., Rim, K.

“…A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain…”
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Coexistence of IgM antihepatitis A virus and IgM antihepatitis E virus in acute viral hepatitis: a prospective, multicentre study in Korea by Jang, J.-H., Jung, Y. M., Kim, J. S., Lee, S. H., Kim, J.-W., Hwang, S. G., Rim, K. S., Park, S. J., Park, Y. M., Kang, S.-K., Lee, H. S., Yun, H., Kim, J.-H., Jeong, S.-H.

“…This study investigated the clinical, serological and molecular characteristics of coexistence of both immunoglobulin M (IgM) antihepatitis A virus (HAV) and…”
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Strained Si CMOS (SS CMOS) technology: opportunities and challenges by Rim, K., Anderson, R., Boyd, D., Cardone, F., Chan, K., Chen, H., Christansen, S., Chu, J., Jenkins, K., Kanarsky, T., Koester, S., Lee, B.H., Lee, K., Mazzeo, V., Mocuta, A., Mocuta, D., Mooney, P.M., Oldiges, P., Ott, J., Ronsheim, P., Roy, R., Steegen, A., Yang, M., Zhu, H., Ieong, M., Wong, H.-S.P.

“…Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been…”
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Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates by Cheng, K., Seo, S., Faltermeier, J., Lu, D., Standaert, T., Ok, I., Khakifirooz, A., Vega, R., Levin, T., Li, J., Demarest, J., Surisetty, C., Song, D., Utomo, H., Chao, R., He, H., Madan, A., DeHaven, P., Klymko, N., Zhu, Z., Naczas, S., Yin, Y., Kuss, J., Jacob, A., Bae, D., Seo, K., Kleemeier, W., Sampson, R., Hook, T., Haran, B., Gifford, G., Gupta, D., Shang, H., Bu, H., Na, M., Oldiges, P., Wu, T., Doris, B., Rim, K., Nowak, E., Divakaruni, R., Khare, M.

“…We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET…”
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Transistor-interconnect mobile system-on-chip co-design method for holistic battery energy minimization by Mojumder, N. N., Song, S. C., Rim, K., Xu, J., Wang, J., Zhu, J., Vratonjic, M., Lin, K., Saint-Laurent, M., Bassett, P., Yeap, Geoffrey

“…We present, for the first time, a holistic data-path driven transistor-interconnect co-optimization method, which systematically isolates the logic-gate and…”
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Dissociative adsorption of CCl4 on the Fe3O4(111)-(2 x 2) selvedge of α-Fe2O3(0001) by ADIB, K, MULLINS, D. R, TOTIR, G, CAMILLONE, N. III, FITTS, J. P, RIM, K. T, FLYNN, G. W, OSGOOD, R. M

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Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs by Khakifirooz, A., Sreenivasan, R., Taber, B. N., Allibert, F., Hashemi, P., Chern, W., Xu, N., Wall, E. C., Mochizuki, S., Li, J., Yin, Y., Loubet, N., Reznicek, A., Mignot, S. M., Lu, D., He, H., Yamashita, T., Morin, P., Tsutsui, G., Chen, C-Y, Basker, V. S., Standaert, T. E., Cheng, K., Levin, T., Nguyen, B. Y., Liu, T-S King, Guo, D., Bu, H., Rim, K., Doris, B.

“…Strain engineering has been in the heart of CMOS technology for over a decade. However, the effectiveness of conventional strain elements, such as stress…”
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