Search Results - "Riley, James R."
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Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array
Published in Nano letters (11-09-2013)“…Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN…”
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Journal Article -
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On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography
Published in Applied physics letters (14-04-2014)“…Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1−xN…”
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3
Atom Probe Tomography of a-Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior
Published in ACS nano (22-05-2012)“…GaN nanowires oriented along the nonpolar a-axis were analyzed using pulsed laser atom probe tomography (APT). Stoichiometric mass spectra were achieved by…”
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Journal Article -
4
Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells
Published in Applied physics letters (13-07-2015)“…Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of InxGa1−xN quantum…”
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Journal Article -
5
Correlation and Morphology of Dopant Decomposition in Mn and Co Codoped Ge Epitaxial Films
Published in Journal of physical chemistry. C (12-01-2012)“…Atom probe tomography (APT) was used to quantify inhomogeneities in the distribution of Mn and Co in doped epitaxial Ge thin films for which X-ray diffraction…”
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Journal Article -
6
On the reliable analysis of indium mole fraction within Inx Ga1-xN quantum wells using atom probe tomography
Published in Applied physics letters (16-04-2014)“…Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1-xN…”
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Journal Article -
7
On the reliable analysis of indium mole fraction within In{sub x}Ga{sub 1−x}N quantum wells using atom probe tomography
Published in Applied physics letters (14-04-2014)“…Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of In{sub…”
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Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous In{sub x}Ga{sub 1−x}N quantum wells
Published in Applied physics letters (13-07-2015)“…Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of In{sub x}Ga{sub…”
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Journal Article -
10
Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array
Published in Nano letters (08-08-2013)Get full text
Journal Article -
11
Atom Probe Tomography of a -Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior
Published in ACS nano (30-04-2012)Get full text
Journal Article -
12
Atom Probe Tomography of Planar and Nonplanar InGaN Quantum Wells For Energy-Efficient Solid-State Lighting
Published 01-01-2014“…Atom probe tomography (APT) was used to characterize the composition and morphology of group-III-nitride nanowires, planar quantum wells (QWs), and nonplanar…”
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Dissertation
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Atom Probe Tomography of Planar and Nonplanar InGaN Quantum Wells For Energy-Efficient Solid-State Lighting
“…Atom probe tomography (APT) was used to characterize the composition and morphology of group-III-nitride nanowires, planar quantum wells (QWs), and nonplanar…”
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Dissertation -
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A MOTOR CARRIER'S VIEWPOINTS ON HIGHWAY USE TAXES
Published in Proceedings of the ... annual conference under the auspices of the National Tax Association (01-01-1957)Get full text
Journal Article