Search Results - "Rieger, D. J."

Inductively coupled plasma etching of GaN by Shul, R. J., McClellan, G. B., Casalnuovo, S. A., Rieger, D. J., Pearton, S. J., Constantine, C., Barratt, C., Karlicek, R. F., Tran, C., Schurman, M.

“…Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl2/H2/Ar…”
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High-density plasma etching of compound semiconductors by Shul, R. J., McClellan, G. B., Briggs, R. D., Rieger, D. J., Pearton, S. J., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C.

“…Inductively coupled plasma (ICP) etching of GaAs, GaP, and InP is reported as a function of plasma chemistry, chamber pressure, rf power, and source power…”
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Sputtered AlN encapsulant for high-temperature annealing of GaN by Zolper, J. C., Rieger, D. J., Baca, A. G., Pearton, S. J., Lee, J. W., Stall, R. A.

“…Reactively sputtered AlN is shown by electrical characterization of Pt/Au Schottky diodes to be an effect encapsulant for GaN annealed at 1100 °C. Schottky…”
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An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications by Sherwin, M.E., Zolper, J.C., Baca, A.G., Shul, R.J., Howard, A.J., Rieger, D.J., Klem, J.F., Hietala, V.M.

“…An all implanted self-aligned n-channel JFET fabrication process is described where Zn implantation is used to form the p/sup +/ gate region. A refractory…”
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Investigation of plasma etch induced damage in compound semiconductor devices by Shul, R. J., Lovejoy, M. L., Hetherington, D. L., Rieger, D. J., Vawter, G. A., Klem, J. F., Melloch, M. R.

“…We have investigated the electrical performance of mesa‐isolated GaAs pn‐junction diodes to determine the plasma‐induced damage effects from reactive ion and…”
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Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system by Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., Rieger, D. J., Han, J., Drummond, T. J., Shul, R. J., Wilson, R. G.

“…Si + implant activation efficiencies above 90%, even at doses of 5×1015 cm−2, have been achieved in GaN by rapid thermal processing at 1400–1500 °C for 10 s…”
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An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact by ZOLPER, J. C, BACA, A. G, HIETALA, V. M, SHUL, R. J, HOWARD, A. J, RIEGER, D. J, SHERWIN, M. E, LOVEJOY, M. L, HJALMARSON, H. P, DRAPER, B. L, KLEM, J. F

“…The authors describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping…”
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Thin-film tantalum-nitride resistor technology for phosphide-based optoelectronics by Lovejoy, M.L., Patrizi, G.A., Roger, D.J., Barbour, J.C.

“…The phosphide material system is an important material system for both microelectronics and optoelectronics, but integrated circuit technology on InP…”
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Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN by Wilson, R. G., Zavada, J. M., Cao, X. A., Singh, R. K., Pearton, S. J., Guo, H. J., Pennycook, S. J., Fu, M., Sekhar, J. A., Scarvepalli, V., Shu, R. J., Han, J., Rieger, D. J., Zolper, J. C., Abernathy, C. R.

“…A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450 °C. S + and Te + produce peak electron…”
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Redistribution of implanted dopants in GaN by Cao, X. A., Wilson, R. G., Zolper, J. C., Pearton, S. J., Han, J., Shul, R. J., Rieger, D. J., Singh, R. K., Fu, M., Scarvepalli, V., Sekhar, J. A., Zavada, J. M.

“…Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5x10 super(14) cm super(-2) and annealed at temperatures…”
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Cranioventral Subluxation of the Odontoid Process With Accompanying Neo(pseudo)arthrosis in Rheumatoid Arthritis by Peichl, Peter, Rieger, Jörg-Dietmar, Kumpan, Wolfgang, Bröil, Johann

“…Cervical spine involvement is a common feature in the course of long existing rheumatoid arthritis (RA).We describe a rare type of vertical subluxation with…”
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Adhesion studies of GaAs-based ohmic contact and bond pad metallization by Seigal, P.K., Briggs, R.D., Rieger, D.J., Baca, A.G., Howard, A.J.

“…The adhesion strength and surface morphology of commonly used n-and p-type ohmic contacts and pad metallization schemes for GaAs were investigated. GeNiAu,…”
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Plasma‐induced damage of GaAs during etching of refractory metal contacts by Shul, R. J., Lovejoy, M. L., Baca, A. G., Zolper, J. C., Rieger, D. J., Hafich, M. J., Corless, R. F., Vartuli, C. B.

“…The effect of plasma‐induced damage on the majority carrier transport properties of p‐type GaAs has been studied by monitoring changes in sheet resistance (R s…”
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Comparison of Mg and Zn gate implants for GaAs n-channel junction field effect transistors by Sherwin, M. E., Zolper, J. C., Baca, A. G., Drummond, T. J., Shul, R. J., Howard, A. J., Rieger, D. J., Schneider, R. P., Klem, J. F.

“…Zn and Mg implants into GaAs are profiled with SIMS and etching c-v to measure the as-implanted and annealed profiles for the eventual formation of shallow…”
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Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas by Shul, R. J., Lovejoy, M. L., Hetherington, D. L., Rieger, D. J., Klem, J. F., Melloch, M. R.

“…Plasma‐induced etch damage often degrades the electrical and optical performance of III–V high‐density integrated circuits and photonic devices. We have…”
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High rate reactive ion etch and electron cyclotron resonance etching of GaAs via holes using thick polyimide and photoresist masks by Shul, R. J., Lovejoy, M. L., Word, J. C., Howard, A. J., Rieger, D. J., Kravitz, S. H.

“…High rate etching of through-substrate via holes are essential to many GaAs electronic and photonic device applications. The backside via holes are relevant to…”
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Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment by Choquette, Kent D., Shul, R. J., Howard, A. J., Rieger, D. J., Freund, R. S., Wetzel, R. C.

“…Extremely smooth GaAs surfaces are attained after SiCl4 reactive ion etching by preparing the surface before etching with hydrogen plasma exposure to…”
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An all-implanted, self-aligned, GaAs JFET with a nonalloyedW/p(+)-GaAs ohmic gate contact by Zolper, J C, Baca, A G, Shul, R J, Howard, A J, Rieger, D J, Sherwin, M E, Lovejoy, M L, Hjalmarson, H P, Draper, B L, Klem, J F, Hietala, V M

“…We describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping was done by…”
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Comparison of Mg and Zn gate implants for GaAx n-channel junction field effect transistors by SHERWIN, M. E, ZOLPER, J. C, BACA, A. G, DRUMMOND, T. J, SHUL, R. J, HOWARD, A. J, RIEGER, D. J, SCHNEIDER, R. P, KLEM, J. F

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Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing by Lovejoy, Michael L., Howard, Arnold J., Zavadil, Kevin R., Rieger, Dennis J., Shul, Randy J., Barnes, Peter A.

“…A low‐temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact…”
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