Search Results - "Riege, S.P."

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    A hierarchical reliability analysis for circuit design evaluation by Riege, S.P., Thompson, C.V., Clement, J.J.

    Published in IEEE transactions on electron devices (01-10-1998)
    “…We suggest a computationally efficient and flexible strategy for assessment of reliability of integrated circuits. The concept of hierarchical reliability…”
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    Journal Article
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    Far-infrared spectroscopy of quantum wires and dots, breaking Kohn’s theorem by Heitmann, D., Bollweg, K., Gudmundsson, V., Kurth, T., Riege, S.P.

    “…We review far-infrared experiments on quantum wires and dots. In particular, we show that with tailored deviations from a parabolic external lateral…”
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    Journal Article
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    Methodology for electromigration critical threshold design rule evaluation by Clement, J.J., Riege, S.P., Cvijetic, R., Thompson, C.V.

    “…We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design…”
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    Journal Article
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    Simulation of the influence of particles on grain structure evolution in two-dimensional systems and thin films by Riege, S.P., Thompson, C.V., Frost, H.J.

    Published in Acta materialia (23-04-1999)
    “…A two-dimensional front-tracking simulation of grain growth has been extended to treat the effects of particles on the evolution of grain structures during…”
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    Journal Article
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    Prospects for single-particle imaging at XFELs by Chapman, H.N., Hau-Riege, S.P., London, R.A., Marchesini, S., Noy, A., Szoke, A., Szoke, H., Ingerman, E., Hajdu, J., Huldt, G., Howells, M.R., He, H., Spence, J.C.H., Weierstall, U.

    “…X-ray free-electron lasers will produce pulses of X-rays that are 10 orders of magnitude brighter than today's undulator sources at synchrotrons. This may…”
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    Conference Proceeding
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    Contrasting failure characteristics of different levels of Cu dual-damascene metallization by Gan, C.L., Wei, F., Thompson, C.V., Pey, K.L., Choi, W.K., Hau-Riege, S.P., Yu, B.

    “…Currently, several kilometers of interconnects are used to construct a state-of-the-art Si-based integrated circuit, which has up to 8 levels of metallization…”
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    Conference Proceeding