Search Results - "Riechert, H"

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy by Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., Riechert, H.

“…Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report…”
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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) by Fromm, F, Oliveira Jr, M H, Molina-Sánchez, A, Hundhausen, M, Lopes, J M J, Riechert, H, Wirtz, L, Seyller, T

“…We report a Raman study of the so-called buffer layer with periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001)…”
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In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices by Chèze, C., Feix, F., Anikeeva, M., Schulz, T., Albrecht, M., Riechert, H., Brandt, O., Calarco, R.

“…We explore an alternative way to fabricate (In, Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the…”
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Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film by Wölz, M, Hauswald, C, Flissikowski, T, Gotschke, T, Fernández-Garrido, S, Brandt, O, Grahn, H. T, Geelhaar, L, Riechert, H

“…Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and…”
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Josephson diode effect in Andreev molecules by Pillet, J.-D., Annabi, S., Peugeot, A., Riechert, H., Arrighi, E., Griesmar, J., Bretheau, L.

“…We propose a platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely…”
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Physical origin of the incubation time of self-induced GaN nanowires by Consonni, V., Trampert, A., Geelhaar, L., Riechert, H.

“…The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy has been investigated by reflection high-energy electron diffraction…”
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Growth of boron-doped few-layer graphene by molecular beam epitaxy by Soares, G. V., Nakhaie, S., Heilmann, M., Riechert, H., Lopes, J. M. J.

“…We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one…”
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The impact of ELT distortions and instabilities on future astrometric observations by Rodeghiero, G, Pott, J-U, Arcidiacono, C, Massari, D, Glück, M, Riechert, H, Gendron, E

“…The paper discusses an assessment study about the impact of the distortions on the astrometric observations with the Extremely Large Telescope originated from…”
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Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments by BOM, N. M, OLIVEIRA, M. H, SOARES, G. V, RADTKE, C, LOPES, J. M. J, RIECHERT, H

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Development of the Warm Astrometric Mask for MICADO Astrometry Calibration by Rodeghiero, G., Sawczuck, M., Pott, J.-U., Glück, M., Biancalani, E., Häberle, M., Riechert, H., Pernechele, C., Naranjo, V., Moreno-Ventas, J., Bizenberger, P., Perera, S., Lessio, L.

“…The achievement of microarcsecond relative astrometry in the near-infrared, with ground-based extremely large telescopes (ELTs) requires an extremely careful…”
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Acousto-electric transport in epitaxial monolayer graphene on SiC by Santos, P. V., Schumann, T., Oliveira, M. H., Lopes, J. M. J., Riechert, H.

“…We report on the piezoelectric excitation and acoustic charge transport by gigahertz surface acoustic waves (SAWs) in epitaxial monolayer graphene (EG) on SiC…”
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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces by Schumann, T., Friedland, K.-J., Oliveira, M. H., Tahraoui, A., Lopes, J. M. J., Riechert, H.

“…We investigate the magnetotransport properties of epitaxial graphene on SiC(0001), which exhibits a stepped surface with regular terraces and step edges. We…”
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Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001) by Jenichen, B., Herfort, J., Jahn, U., Trampert, A., Riechert, H.

“…We demonstrate Fe3Si/Ge/Fe3Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron…”
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In situ investigation of self-induced GaN nanowire nucleation on Si by Chèze, C., Geelhaar, L., Trampert, A., Riechert, H.

“…The nucleation of GaN nanowires grown by molecular beam epitaxy on bare Si(111) and Si(001) has been investigated in situ by reflection high-energy electron…”
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The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons by Galves, L.A., Wofford, J.M., Soares, G.V., Jahn, U., Pfüller, C., Riechert, H., Lopes, J.M.J.

“…Graphene nanoribbons (GNRs) are promising for applications in nanoelectronics due to their unique properties. Therefore, achieving the controlled and…”
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Acoustically Driven Photon Antibunching in Nanowires by Hernández-Mínguez, A, Möller, M, Breuer, S, Pfüller, C, Somaschini, C, Lazić, S, Brandt, O, García-Cristóbal, A, de Lima, M. M, Cantarero, A, Geelhaar, L, Riechert, H, Santos, P. V

“…The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton…”
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Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy by Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H.

“…The evolution of the density of self-induced GaN nanowires as a function of the growth time, gallium rate, and growth temperature has been investigated by…”
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Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate by Drechsel, P., Riechert, H.

“…We demonstrate the growth of 4.5 μm thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For…”
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Influence of the silicon carbide surface morphology on the epitaxial graphene formation by Oliveira, M. H., Schumann, T., Ramsteiner, M., Lopes, J. M. J., Riechert, H.

“…Graphene grown on SiC(0001) by Si depletion has a stepped surface with terraces and step heights up to 10 times larger than those observed in the original SiC…”
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Low threshold InGaAsN/GaAs lasers beyond 1500 nm by Jaschke, G., Averbeck, R., Geelhaar, L., Riechert, H.

“…GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations…”
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