Search Results - "Richmond, Jim"

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT by Yan Gao, Huang, A.Q., Krishnaswami, S., Richmond, J., Agarwal, A.K.

“…In this paper, static and switching characteristics of a 1200 V 4H-silicon carbide (SiC) bipolar junction transistor (BJT) at a bus voltage of 600 V are…”
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers by Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

“…The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC…”
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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor by Ryu, S., Lichtenwalner, D., Van Brunt, E., Capell, C., O'Loughlin, M., Jonas, C., Lemma, Y., Zhang, J., Richmond, J., Burk, A., Hull, B., O'Brien, H., Ogunniyi, A., Lelis, A., Casady, J., Grider, D., Allen, S., Palmour, J.

“…The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140…”
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Improvements to the Analytical Model to Describe UIS Events by Steinmann, Philipp, Ganguly, Satyaki, Hull, Brett, Lam, Khiem, Lichtenwalner, Daniel J., Park, Jae-Hyung, Potera, Rahul, Richmond, Jim, Ryu, Sei-Hyung, Sabri, Shadi, Van Brackle, Charles, Van Brunt, Edward, Williams, Elizabeth

“…We generalize and refine an analytical model to describe unclamped inductive switching (UIS) events in power MOSFETs and derive a novel, fast method to extract…”
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Surge current failure mechanisms in 4H-SiC JBS rectifiers by Van Brunt, Edward, Barbieri, Thomas, Barkley, Adam, Solovey, Jim, Richmond, Jim, Hull, Brett

“…4H-SÍC Junction Barrier Schottky (JBS) rectifiers can operate in both a purely unipolar mode during normal operation, and a bipolar mode during surge…”
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Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed by Zhang, Q. J., Wang, G., Jonas, C., Capell, C., Pickle, S., Butler, P., Lichtenwalner, D., Van Brunt, E., Ryu, S., Richmond, J., Hull, B., Casady, J., Allen, S., Palmour, J.

“…Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to…”
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Evaluating HER2 amplification and overexpression in breast cancer by Bartlett, John M. S., Going, James J., Mallon, Elizabeth A., Watters, Amanda D., Reeves, Jonathan R., Stanton, Peter, Richmond, Jim, Donald, Brian, Ferrier, Rhona, Cooke, Timothy G.

“…The development of Herceptin (Trazumatab) makes testing for HER2 status important for choosing optimal therapy in breast cancer. This study addresses the…”
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Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs by Van Brunt, Edward, Gangyao Wang, Liu, Jimmy, Pala, Vipindas, Hull, Brett, Richmond, Jim, Palmour, John

“…This work describes the operation of commercial 4H-SiC Junction-Barrier Schottky (JBS) Diodes at extreme voltage slew rates (dV/dt) in an attempt to force…”
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Recent progress in SiC DMOSFETs and JBS diodes at Cree by Callanan, R.J., Agarwal, A., Burk, A., Das, M., Hull, B., Husna, F., Powell, A., Richmond, J., Sei-Hyung Ryu, Qingchun Zhang

“…This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 kV SiC DMOSFETs…”
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10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems by Pala, Vipindas, Brunt, Edward V., Lin Cheng, O'Loughlin, Michael, Richmond, Jim, Burk, Albert, Allen, Scott T., Grider, David, Palmour, John W., Scozzie, Charles J.

“…Advanced high-voltage (10 kV-15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system…”
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High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications by Lin Cheng, Agarwal, Anant K., Schupbach, Marcelo, Gajewski, Donald A., Lichtenwalner, Daniel J., Pala, Vipindas, Sei-Hyung Ryu, Richmond, Jim, Palmour, John W., Ray, William, Schrock, James, Bilbao, Argenis, Bayne, Stephen, Lelis, Aivars, Scozzie, Charles

“…In this paper, we report our recently developed 2 nd Generation, large-area (56 mm 2 with an active conducting area of 40 mm 2 ) 4H-SiC DMOSFET, which can…”
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers : Silicon carbide devices and technology by HULL, Brett A, SUMAKERIS, Joseph J, O'LOUGHLIN, Michael J, QINGCHUN ZHANG, RICHMOND, Jim, POWELL, Adrian R, IMHOFF, Eugene A, HOBART, Karl D, RIVERA-LOPEZ, Angel, HEFNER, Allen R

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20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications by Lin Cheng, Agarwal, Anant K., Capell, Craig, O'Loughlin, Michael, Van Brunt, Edward, Lam, Khiem, Richmond, Jim, Burk, Al, Palmour, John W., O'Brien, Heather, Ogunniyi, Aderinto, Scozzie, Charles

“…The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its…”
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High-Power Pulsed Evaluation of High-Voltage SiC N-GTO by Ogunniyi, Aderinto, O'Brien, Heather, Ryu, Sei-Hyung, Richmond, Jim

“…This research is focused on the characterization and pulse evaluation of high voltage silicon carbide (SiC) n-type (n-doped drift region) gate turn-off…”
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4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges by Hulla, B, Jon Zhang, Das, M, Sei-Hyung Ryu, Jonas, C, Dhar, S, Haney, S, Callanan, R, Richmond, J

“…Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in…”
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Comparison of Static and Switching Characteristics of 1200V 4H-SiC BJT and 1200V Si-IGBT by Yan Gao, Huang, A.Q., Sumi Krishnaswami, Richmond, J., Agarwal, A.K.

“…In this paper, static and switching characteristics of a 1200V 4H-SiC BJT at bus voltage of 600V are reported for the first time. Comparison was made between…”
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900V silicon carbide MOSFETs for breakthrough power supply design by Pala, Vipindas, Barkley, Adam, Hull, Brett, Gangyao Wang, Sei-Hyung Ryu, Van Brunt, Edward, Lichtenwalner, Daniel, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Allen, Scott, Casady, Jeffrey, Grider, David, Palmour, John

“…Improvements in 900V SiC MOSFET technology have resulted in switches that have extremely low ON resistance in high-speed packages. 900V SiC MOSFETs are…”
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Roadmap for megawatt class power switch modules utilizing large area silicon carbide MOSFETs and JBS diodes by Richmond, J., Leslie, S., Hull, B., Das, M., Agarwal, A., Palmour, J.

“…Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to…”
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Home Maintenance Manual by Richmond, Jim

“…This manual, written especially for the Navajo and Hopi Indian Relocation Commission, is a simply worded, step-by-step guide to home maintenance for new…”
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"Behind the Bars" Look at a Correctional Officer's Career by Richmond, Jim

“…After a full year of law enforcement courses, three female community college students worked full-time for 2 months in the summer as student interns on an…”
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