Search Results - "Rheinländer, B."

Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films by Schmidt, R., Rheinländer, B., Schubert, M., Spemann, D., Butz, T., Lenzner, J., Kaidashev, E. M., Lorenz, M., Rahm, A., Semmelhack, H. C., Grundmann, M.

“…The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO…”
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Exciton–polariton formation at room temperature in a planar ZnO resonator structure by Schmidt-Grund, R., Rheinländer, B., Czekalla, C., Benndorf, G., Hochmuth, H., Lorenz, M., Grundmann, M.

“…We show the dispersion of exciton–polaritons in an all oxide planar resonator structure. A quasi-bulk ZnO film acts as active medium and as cavity. The mirrors…”
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Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study by Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, Hyun Mo, Chen, H. Y., Wee, A. T. S., Osipowicz, T., Pan, J. S., Jordaan, W. A., Hauert, R., Klotz, U., van der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N. V., Chandler-Horowitz, D., Ehrstein, J. R., Muller, D., Dura, J. A.

“…Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant…”
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UV–VUV spectroscopic ellipsometry of ternary MgxZn1−xO (0≤x≤0.53) thin films by Schmidt-Grund, R., Schubert, M., Rheinländer, B., Fritsch, D., Schmidt, H., Kaidashev, E.M., Lorenz, M., Herzinger, C.M., Grundmann, M.

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a-Si/SiOx Bragg-reflectors on micro-structured InP by SCHMIDT-GRUND, R, NOBIS, T, GOTTSCHALCH, V, RHEINLÄNDER, B, HERRNBERGER, H, GRUNDMANN, M

“…a--Si/SiOx Bragg--reflectors for the wavelength region from 500 nm to 830 nm with a low number of pairs were grown on cylindrical half--pipes on InP substrates…”
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Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors by GOTTSCHALCH, V, SCHMIDT, R, RHEINLÄNDER, B, PUDIS, D, HARDT, S, KVIETKOVA, J, WAGNER, G, FRANZHELD, R

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Lamellar Diblock Copolymer Thin Films Investigated by Tapping Mode Atomic Force Microscopy:  Molar-Mass Dependence of Surface Ordering. Volume 36, Number 23, November 18, 2003, pp 8717−8727 by Busch, P, Posselt, D, Smilgies, D.-M, Rheinländer, B, Kremer, F, Papadakis, C. M

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Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry by Schubert, M., Rheinländer, B., Franke, E., Neumann, H., Hahn, J., Röder, M., Richter, F.

“…Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the…”
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Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements by Kasic, A, Schubert, M, Rheinländer, B, Riede, V, Einfeldt, S, Hommel, D, Kuhn, B, Off, J, Scholz, F

“…We use infrared spectroscopic ellipsometry (IRSE) to obtain optical free-carrier parameters in p- and n-type hexagonal ( α-) GaN films. Si- and Mg-doped films…”
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Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example by Schubert, M., Rheinländer, B., Franke, E., Neumann, H., Tiwald, T. E., Woollam, J. A., Hahn, J., Richter, F.

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Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs by Rheinländer, B., Schmidt, Heidemarie, Gottschalch, V.

“…Ellipsometric measurements of metalorganic vapor phase epitaxially grown InAs monolayers (0.5–2.0 ML) in GaAs were made at room temperature in the spectral…”
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Band-gap reduction and valence band splitting in spontaneously ordered GaInP2 studied by dark-field spectroscopy by SCHUBERT, M, RHEINLÄNDER, B, GOTTSCHALCH, V

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InP monolayers inserted in a GaP matrix studied by spectroscopic ellipsometry by Schmidt, Heidemarie, Rheinländer, B., Gottschalch, V., Wagner, G.

“…Ellipsometric measurements on single ultrathin InP layers of 0.5 and 1 monolayer (ML) thickness inserted into GaP by metal-organic vapor phase epitaxy (MOVPE)…”
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Ellipsometry on monolayer films of InAs and AlAs embedded in GaAs and of InP embedded in GaP by Schmidt, H, Rheinländer, B, Gottschalch, V

“…Ellipsometric measurements have been made at room temperature on MOVPE-grown InAs monolayers (ML) (0.5–1 ML) and AlAs MLs (1 to 12 ML) in GaAs around the GaAs…”
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Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities by Nassauer, S, Kasic, A, Rheinländer, B, Gottschalch, V, Kováč, J, Kvietková, J, Benndorf, G

“…We report on optical investigations of differently spaced multiple InAs-monolayers in weak-finesse GaAs/AlGaAs-microcavities. The excitonic properties of the…”
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Free-Carrier Response and Lattice Modes of Group III-Nitride Heterostructures Measured by Infrared Ellipsometry by Schubert, M., Woollam, J.A., Kasic, A., Rheinländer, B., Off, J., Kuhn, B., Scholz, F.

“…We report on the application of infrared spectroscopic ellipsometry (IR‐SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical…”
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Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures by Kováč, J, Pudiš, D, Šatka, A, Jánoš, L’, Jakabovič, J, Schwabe, R, Gottschalch, V, Benndorf, G, Rheinländer, B

“…We have investigated the temperature dependence of type-I and type-II optical transitions in electroluminescence spectra from type-II (GaAs) n /(AlAs) m…”
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Optical Polarization Spectroscopy on Quantum Confined Stark Effect in Resonant-Cavity AlGaAs/GaAs MQW Structures by Rheinländer, B., Borgulová, J., Kováč, J., Gottschalch, V., Waclawek, J.

“…The effect of an electric field on s‐polarized reflectivity and spectroscopic ellipsometry has been studied on planar‐cavity PIN photodiode structures based on…”
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Observation of strong light-matter coupling by spectroscopic ellipsometry by Hilmer, H., Sturm, C., Schmidt-Grund, R., Rheinländer, B., Grundmann, M.

“…We report on the observation of strong coupling between excitons and cavity photons in a ZnO-based microresonator up to room temperature. The ZnO-based…”
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ZnO based planar and micropillar resonators by Schmidt-Grund, R., Rheinländer, B., Czekalla, C., Benndorf, G., Hochmut, H., Rahm, A., Lorenz, M., Grundmann, M.

“…In this paper we report on planar and microscopic cylindrical resonators with ZnO as the cavity and active medium surrounded with ZrO 2/MgO Bragg reflectors…”
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