Search Results - "Reynolds, D.C."

Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO by Reynolds, D.C., Look, D.C., Jogai, B., Van Nostrand, J.E., Jones, R., Jenny, J.

“…In this paper we show that the origin of the yellow luminescence band in GaN and the green luminescence band in ZnO is best explained by a transition between a…”
Get full text

Optical properties of ZnO crystals containing internal strains by Reynolds, D.C, Look, D.C, Jogai, B, Jones, R.L, Litton, C.W, Harsch, W, Cantwell, G

“…The way in which in-grown strain impacts the optical properties of crystals can be revealed when combined with annealing studies. During the annealing process…”
Get full text

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO by Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

“…A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen…”
Get full text

Electrical properties of bulk ZnO by Look, D.C., Reynolds, D.C., Sizelove, J.R., Jones, R.L., Litton, C.W., Cantwell, G., Harsch, W.C.

“…Large-diameter (2-inch), n-type ZnO boules grown by a new vapor-phase transport method were investigated by the temperature-dependent Hall-effect technique…”
Get full text

Defect Donor and Acceptor in GaN by Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L., Molnar, R. J.

Get full text

Optically pumped ultraviolet lasing from ZnO by Reynolds, D.C., Look, D.C., Jogai, B.

“…Well formed, longitudinal optically-pumped lasing modes from vapor phase grown ZnO platelets have been observed. The lasing cavity was formed from as-grown…”
Get full text

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN by Reynolds, D.C., Look, D.C., Jogai, B., Morkoç, H.

“…Several of the optical transitions in ZnO and GaN appear to derive from a similar origin and have considerable overlap in the energy regions where they occur…”
Get full text

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy by Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P.

“…High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements…”
Get full text

Point defect characterization of GaN and ZnO by Look, D.C, Reynolds, D.C, Fang, Z.-Q, Hemsky, J.W, Sizelove, J.R, Jones, R.L

“…Point defects are created in bulk ZnO and epitaxial GaN by 1–2 MeV electron irradiation at 300 K, and are studied by temperature-dependent Hall effect,…”
Get full text

Identification of an ionized-donor-bound-exciton transition in GaN by Reynolds, D.C., Look, D.C., Jogai, B., Phanse, V.M., Vaudo, R.P.

“…The transition involving an exciton bound to an ionized donor has been identified in GaN. The linewidth of the transition was not sufficiently narrow to permit…”
Get full text

Phonon replicas associated with donor–bound–excitons in GaN by Reynolds, D.C, Look, D.C, Jogai, B, Molnar, R.J

“…Phonon sidebands have been observed on the donor–bound–exciton transitions in two samples of GaN grown by hydride vapor phase epitaxy. The phonon energies of…”
Get full text

Electrical and optical properties of semi-insulating GaN by Looka, D.C., Reynolds, D.C., Jones, R.L., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., Morkoç, H.

“…Molecular-beam-epitaxial (MBE) GaN layers can be made semi-insulating (SI) by using a high N flux during growth. For growth at low N flux, the samples have…”
Get full text

Annealing studies on GaN hydride vapor phase epitaxial layers by Reynolds, D.C., Look, D.C., Wille, T., Bajaj, K.K., Collins, T.C., Molnar, R.J.

“…A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of ∼835°C. The as-grown sample, and the same…”
Get full text

Determination of defect pair orientation in ZnO by REYNOLDS, D. C, LOOK, D. C, JOGAI, B, LITTON, C. W, CANTWELL, G, HARSCH, W. C

“…The orientation of defect pairs with respect to the crystallographic axes was determined in ZnO. In a specific orientation of the strain with respect to the c…”
Get full text

Ground and excited states associated with donor bound-excitons in high purity GaAs by Reynolds, D.C., Look, D.C., Jogai, B., McCoy, G.L.

“…Four emission lines have been observed in high purity GaAs, which are associated with excitons bound to a shallow neutral donor. The lowest energy line is the…”
Get full text

Crystal field splitting of defect pair spectra in GaAs by Reynolds, D.C, Look, D.C, Jogai, B, Kaspi, R, Evans, K.R

“…We report three photoluminescent lines in the 1.504–1.507 eV range in GaAs, associated with excitons bound to defect pairs. The lines are all split by crystal…”
Get full text

Using anesthetic localization to diagnose oral and dental pain by Brown, R S, Hinderstein, B, Reynolds, D C, Corio, R L

“…The anesthetic localization procedure is an aid in ruling out or confirming suspected primary sources of oral or dental pain. The authors present two cases to…”
Get more information

Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique by Fang, Z.-Q., Reynolds, D.C., Look, D.C., Mier, M.G., Jones, R.L., Henry, R.L.

“…Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950/spl deg/C under As…”
Get full text

Evidence For Strong Spatially Localized Band-filling Effects In Interface Islands For Extremely Low Laser Intensities by Ding, Y.J., Reynolds, D.C., Lee, S.J., Khurgin, J.B., Rabinovich, W.S., Katzer, D.S.

Get full text

Growth and properties of n- and p-type ZnO by Litton, C.W., Look, D.C., Claflin, B.B., Reynolds, D.C., Cantwell, G., Eason, D.B., Worley, R.D.

“…We will focus our attention on growth and properties of low-resistivity, n-type ZnO single crystals (/spl mu//sub e/ /spl sim/ 230 cm/sup 2//V-s, n/sub e/ /spl…”
Get full text