Search Results - "Rewari, Sonam"
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Dual metal dual layer GAA NW–FET (DMDL–GAA–NW–FET) biosensor for label free SARS-CoV-2 detection
Published in Microsystem technologies : sensors, actuators, systems integration (01-05-2024)“…The current Covid-19 epidemic has necessitated the development of a biosensor that is expected to be extraordinarily sensitive, rapid, precise, and economical…”
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Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)
Published in Applied physics. A, Materials science & processing (01-05-2020)“…Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain…”
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Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications
Published in Microsystem technologies : sensors, actuators, systems integration (01-05-2024)“…In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application…”
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Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications
Published in Journal of electronic materials (2021)“…Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that,…”
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Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL)
Published in Indian journal of physics (01-02-2021)“…In this paper, an analytical paradigm for the gate-induced drain leakage (GIDL) for shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET…”
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Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)
Published in Microsystem technologies : sensors, actuators, systems integration (01-10-2023)“…In this manuscript, analog/RF performance, linearity, harmonic distortion, small signal AC performance and scattering parameter (S-parameters) metrics of…”
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Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application
Published in Serbian journal of electrical engineering (2024)“…This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for…”
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Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters
Published in Arabian journal for science and engineering (2011) (2023)“…The Schottky tube field-effect transistor (ST-FET) analytical model for surface potential, electric field, and subthreshold current evolved using the…”
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Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications - Analytical Study
Published in SILICON (01-12-2021)“…Here, an analytical model has been proposed for Core-Shell-Nanowire-Junctionless-Accumulation-Mode- Field-Effect Transistor (CSN-JAM-FET) for High Frequency…”
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Analytical modeling and numerical simulation of graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for label free Avian Influenza antibody and DNA detection
Published in Microelectronics (01-12-2023)“…This manuscript presents the analytical model of a novel biosensor called Graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for the detection of Avian…”
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Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications
Published in Journal of electronic materials (01-06-2023)“…In this paper, an analytical model for a junctionless accumulation-mode-based nanotube field-effect transistor (JLAM-NT-FET) is proposed for radiation sensing…”
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Correction to: Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications-Analytical Study
Published in SILICON (2022)“…The author’s affiliation was wrong. The correct author name and affiliation is shown above…”
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Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG)
Published in Superlattices and microstructures (01-02-2016)“…In this paper, Numerical Model for Electric Potential, Subthreshold Current and Subthreshold Swing for Junctionless Double Surrounding Gate(JLDSG) MOSFEThas…”
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Characterization of Radiation-Dependent Dual Channel AlGaN/GaN MOS-HEMT Based Dosimeter
Published in 2023 9th International Conference on Signal Processing and Communication (ICSC) (21-12-2023)“…We have developed a Double channel MOSHEMT-based dosimeter. This paper presents the performance comparison between double channel HEMT based dosimeter and…”
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Conference Proceeding -
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Numerical simulation and characterization of high-power gallium nitride based Junctionless Accumulation Mode Nanowire FET (GaN-JAM-NWFET) for small signal high frequency terahertz applications
Published in International journal of electronics and communications (01-01-2024)Get full text
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Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules
Published in Journal of electronic materials (01-02-2024)“…A gate engineered ferroelectric junctionless field-effect transistor biosensor (BioFET) is proposed and investigated for label-free detection of various…”
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Temperature-based Numerical Simulation investigation of the analog performance of AlGaN/GaN MOS-HEMT
Published in 2023 IEEE Devices for Integrated Circuit (DevIC) (07-04-2023)“…High Electron Mobility Transistors (HEMTs) rooted on AlGaN/GaN are regarded as propitious candidates for high power and high speed applications. A simulation…”
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Conference Proceeding -
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Novel hybrid-CMOS inverter utilizing phase transition material for enhancing digital logic performance at lower operating voltages
Published in Physica scripta (01-03-2024)“…Abstract This research paper introduces a novel design for a hybrid-CMOS inverter using vanadium dioxide (VO 2 ), a phase transition material. The proposed…”
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Physics-based analytical model for trap assisted biosensing in dual cavity negative capacitance junctionless accumulation mode FET
Published in Microelectronics (01-01-2024)“…The design of a ferroelectric-based biosensor for detecting various biomolecules like proteins and DNA has captivated the interest of researchers in early…”
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