Search Results - "Rewari, Sonam"

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  1. 1

    Dual metal dual layer GAA NW–FET (DMDL–GAA–NW–FET) biosensor for label free SARS-CoV-2 detection by Yadav, Shivani, Rewari, Sonam

    “…The current Covid-19 epidemic has necessitated the development of a biosensor that is expected to be extraordinarily sensitive, rapid, precise, and economical…”
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    Journal Article
  2. 2

    Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET) by Goel, Anubha, Rewari, Sonam, Verma, Seema, Gupta, R. S.

    “…Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain…”
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    Journal Article
  3. 3

    Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications by Kaul, Aapurva, Rewari, Sonam, Nand, Deva

    “…In this paper a Hetero-Dielectric Macaroni Channel Cylindrical Gate All Around FET (HD-MC CGAA FET) is proposed for reduced gate leakage analog application…”
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    Journal Article
  4. 4

    Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications by Goel, Anubha, Rewari, Sonam, Verma, Seema, Gupta, R. S.

    Published in Journal of electronic materials (2021)
    “…Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that,…”
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    Journal Article
  5. 5

    Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL) by Goel, Anubha, Rewari, Sonam, Verma, Seema, Gupta, R. S.

    Published in Indian journal of physics (01-02-2021)
    “…In this paper, an analytical paradigm for the gate-induced drain leakage (GIDL) for shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET…”
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    Journal Article
  6. 6

    Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC) by Neeraj, Neeraj, Sharma, Shobha, Goel, Anubha, Rewari, Sonam, Gupta, R. S.

    “…In this manuscript, analog/RF performance, linearity, harmonic distortion, small signal AC performance and scattering parameter (S-parameters) metrics of…”
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    Journal Article
  7. 7

    Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application by Ahmad, Neda, Rewari, Sonam, Nath, Vandana

    “…This paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for…”
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    Journal Article
  8. 8

    Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters by Sharma, Swati, Goel, Anubha, Rewari, Sonam, Nath, Vandana, Gupta, R. S.

    “…The Schottky tube field-effect transistor (ST-FET) analytical model for surface potential, electric field, and subthreshold current evolved using the…”
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    Journal Article
  9. 9

    Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications - Analytical Study by Rewari, Sonam

    Published in SILICON (01-12-2021)
    “…Here, an analytical model has been proposed for Core-Shell-Nanowire-Junctionless-Accumulation-Mode- Field-Effect Transistor (CSN-JAM-FET) for High Frequency…”
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    Journal Article
  10. 10

    Analytical modeling and numerical simulation of graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for label free Avian Influenza antibody and DNA detection by Yadav, Shivani, Rewari, Sonam

    Published in Microelectronics (01-12-2023)
    “…This manuscript presents the analytical model of a novel biosensor called Graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for the detection of Avian…”
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    Journal Article
  11. 11
  12. 12

    Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications by Batra, Sia, Rewari, Sonam

    Published in Journal of electronic materials (01-06-2023)
    “…In this paper, an analytical model for a junctionless accumulation-mode-based nanotube field-effect transistor (JLAM-NT-FET) is proposed for radiation sensing…”
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    Journal Article
  13. 13

    Correction to: Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications-Analytical Study by Rewari, Sonam

    Published in SILICON (2022)
    “…The author’s affiliation was wrong. The correct author name and affiliation is shown above…”
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    Journal Article
  14. 14

    Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG) by Rewari, Sonam, Haldar, Subhasis, Nath, Vandana, Deswal, S.S., Gupta, R.S.

    Published in Superlattices and microstructures (01-02-2016)
    “…In this paper, Numerical Model for Electric Potential, Subthreshold Current and Subthreshold Swing for Junctionless Double Surrounding Gate(JLDSG) MOSFEThas…”
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    Journal Article
  15. 15

    Characterization of Radiation-Dependent Dual Channel AlGaN/GaN MOS-HEMT Based Dosimeter by Ruby, Mann, Shobha, Sharma, Sonam, Rewari, Gupta, R. S.

    “…We have developed a Double channel MOSHEMT-based dosimeter. This paper presents the performance comparison between double channel HEMT based dosimeter and…”
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    Conference Proceeding
  16. 16
  17. 17

    Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules by Yadav, Snehlata, Rewari, Sonam, Pandey, Rajeshwari

    Published in Journal of electronic materials (01-02-2024)
    “…A gate engineered ferroelectric junctionless field-effect transistor biosensor (BioFET) is proposed and investigated for label-free detection of various…”
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    Journal Article
  18. 18

    Temperature-based Numerical Simulation investigation of the analog performance of AlGaN/GaN MOS-HEMT by Ruby, Mann, Shobha, Sharma, Sonam, Rewari, Gupta, R. S.

    “…High Electron Mobility Transistors (HEMTs) rooted on AlGaN/GaN are regarded as propitious candidates for high power and high speed applications. A simulation…”
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    Conference Proceeding
  19. 19

    Novel hybrid-CMOS inverter utilizing phase transition material for enhancing digital logic performance at lower operating voltages by Sorot, Ritika, Goel, Anubha, Rewari, Sonam

    Published in Physica scripta (01-03-2024)
    “…Abstract This research paper introduces a novel design for a hybrid-CMOS inverter using vanadium dioxide (VO 2 ), a phase transition material. The proposed…”
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    Journal Article
  20. 20

    Physics-based analytical model for trap assisted biosensing in dual cavity negative capacitance junctionless accumulation mode FET by Yadav, Snehlata, Rewari, Sonam, Pandey, Rajeshwari

    Published in Microelectronics (01-01-2024)
    “…The design of a ferroelectric-based biosensor for detecting various biomolecules like proteins and DNA has captivated the interest of researchers in early…”
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    Journal Article