Search Results - "Restrepo, O D"

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  1. 1

    Full first-principles theory of spin relaxation in group-IV materials by Restrepo, O D, Windl, W

    Published in Physical review letters (19-10-2012)
    “…We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically…”
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    Journal Article
  2. 2

    Three‐dimensional imaging of shear bands in bulk metallic glass composites by HUNTER, A.H., ARAULLO‐PETERS, V., GIBBONS, M., RESTREPO, O.D., NIEZGODA, S.R., WINDL, W., FLORES, K.M., HOFMANN, D.C., MARQUIS, E.A.

    Published in Journal of microscopy (Oxford) (01-12-2016)
    “…Summary The mechanism of the increase in ductility in bulk metallic glass matrix composites over monolithic bulk metallic glasses is to date little understood,…”
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    Journal Article
  3. 3

    Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers by Srinivasan, P., Gonzalez, O. H., Restrepo, O. D., Lestage, J., Syed, S., Taylor, W., Bandyopadhyay, A., Gall, M., Ludvik, S.

    “…The thermal behavior and its effect on RF large signal aging is extensively studied using a QFN-packaged 22FDX Power Amplifier (PA). While no strong dependence…”
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    Conference Proceeding
  4. 4

    EDA method to address interconnect reliability and reduce overdesign in custom analog designs by Herklotz, M., Kuhn, I., Restrepo, O. D., Siemes, S., Choi, S., Mau, H.

    “…A proper simulation of temperature distributions within the electronic design automation (EDA) flows is quite crucial to achieve both a competitive and…”
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    Conference Proceeding
  5. 5

    RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications by Srinivasan, P., Lestage, J., Syed, S., Hui, X., Moss, S., Restrepo, O. D., Gonzalez, O. H., Chen, Y., McKay, T., Bandyopadhyay, A., Cahoon, N., Guarin, F., Min, B., Gall, M., Ludvik, S.

    “…RF long term aging and large signal reliability in 22FDX Wi-Fi Power Amplifier (P A) designs is investigated. Packaged PA operating at 5.4GHz., 3.3V V DD with…”
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    Conference Proceeding
  6. 6

    Nonresonant inelastic x-ray scattering and energy-resolved Wannier function investigation of d-d excitations in NiO and CoO by Larson, B C, Ku, Wei, Tischler, J Z, Lee, Chi-Cheng, Restrepo, O D, Eguiluz, A G, Zschack, P, Finkelstein, K D

    Published in Physical review letters (13-07-2007)
    “…Nonresonant inelastic x-ray scattering measurements on NiO and CoO show that strong dipole-forbidden d-d excitations appear within the Mott gap at large wave…”
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    Journal Article
  7. 7

    Electron–hole excitations in NiO: LSDA+U-based calculations vs. inelastic X-ray scattering and ellipsometry measurements by Eguiluz, A.G., Restrepo, O.D., Larson, B.C., Tischler, J.Z., Zschack, P., Jellison, G.E.

    “…The performance of the LSDA+U functional—in particular, the quality of the ground-state—is tested via calculations of the electron–hole excitations of NiO,…”
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    Journal Article Conference Proceeding
  8. 8
  9. 9

    Low-energy charge-density excitations in MgB2: Striking interplay between single-particle and collective behavior for large momenta by Cai, Y Q, Chow, P C, Restrepo, O D, Takano, Y, Togano, K, Kito, H, Ishii, H, Chen, C C, Liang, K S, Chen, C T, Tsuda, S, Shin, S, Kao, C C, Ku, W, Eguiluz, A G

    Published in Physical review letters (27-10-2006)
    “…A sharp feature in the charge-density excitation spectra of single-crystal MgB2, displaying a remarkable cosinelike, periodic energy dispersion with momentum…”
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    Journal Article
  10. 10

    First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering by Restrepo, O. D., Varga, K., Pantelides, S. T.

    Published in Applied physics letters (25-05-2009)
    “…Electron mobilities limited by phonon and ionized impurity scattering have traditionally been modeled by suppressing atomic-scale detail, relying on empirical…”
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    Journal Article
  11. 11

    First-principles calculations of electron mobilities in silicon: Phononand Coulomb scattering by Restrepo, O. D., Varga, K., Pantelides, S. T.

    Published in Applied physics letters (28-05-2009)
    “…Electron mobilities limited by phonon and ionized impurity scattering have traditionally been modeled by suppressing atomic-scale detail, relying on empirical…”
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    Journal Article
  12. 12

    Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications by Paliwoda, P., Rabie, M.A., Restrepo, O.D., Silva, E.C., Kaltalioglu, E., Guarin, F., Barnett, K., Johnson, J., Taylor, W., Boenke, M., Min, B.

    “…This paper presents a systematic methodology by thermal characterization and simulation of a 3-FET stacked K/Ka-band class-AB power amplifier built on…”
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    Conference Proceeding
  13. 13

    Non-Resonant Inelastic X-Ray Scattering and Energy-Resolved Wannier Function Investigation of d-d Excitations in NiO and CoO by Larson, Ben C, Ku, Wei, Tischler, Jonathan Zachary, Lee, Chi-Cheng, Restrepo, O. D., Eguiluz, Adolfo G, Zschack, P., Finkelstein, Kenneth D

    Published in Physical review letters (01-01-2007)
    “…Nonresonant inelastic x-ray scattering measurements on NiO and CoO show that strong dipole forbidden d-d excitations appear within the Mott gap at large wave…”
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    Journal Article
  14. 14
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  16. 16

    Strain-tunable extraordinary maqnetocrystalline anisotropy in Sr sub(2) CrReO sub(6) epitaxial films by Lucy, J M, Ball, M R, Restrepo, O D, Hauser, A J, Soliz, J R, Freeland, J W, Woodward, P M, Windl, W, Yang, F

    “…We report the discovery of extraordinarily large anisotropy fields and strain-tunable magnetocrystalline anisotropy in Sr sub(2) CrReO sub(6) epitaxial films…”
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    Journal Article
  17. 17

    Defect states and disorder in charge transport in semiconductor nanowires by Ko, Dongkyun, Zhao, X. W, Reddy, Kongara M, Restrepo, O. D, Mishra, R, Beloborodov, I. S, Trivedi, Nandini, Padture, Nitin P, Windl, W, Yang, F. Y, Johnston-Halperin, E

    Published 22-06-2011
    “…We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage…”
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    Journal Article
  18. 18

    Low-Energy Charge-Density Excitations in MgB$_{2}$: Striking Interplay between Single-Particle and Collective Behavior for Large Momenta by Cai, Y. Q, Chow, P. C, Restrepo, O. D, Takano, Y, Togano, K, Kito, H, Ishii, H, Chen, C. C, Liang, K. S, Chen, C. T, Tsuda, S, Shin, S, Kao, C. C, Ku, W, Eguiluz, A. G

    Published 12-05-2006
    “…Phys. Rev. Lett. 97, 176402 (2006) A sharp feature in the charge-density excitation spectra of single-crystal MgB$_{2}$, displaying a remarkable cosine-like,…”
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    Journal Article