Search Results - "Rennon, S."

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy by Sun, Y. T., Rodrı́guez Messmer, E., Lourdudoss, S., Ahopelto, J., Rennon, S., Reithmaier, J. P., Forchel, A.

“…The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew…”
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Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology by Rennon, S., Bach, L., Reithmaier, J.P., Forchel, A.

“…Complex coupled distributed feedback (CC-DFB) and distributed Bragg-reflector (DBR) GaInAsP-InP lasers were fabricated by focused-ion-beam lithography. Due to…”
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Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography by Bach, L., Rennon, S., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…By using focused ion beam lithography high performance 1.55-μm emitting distributed Bragg reflector lasers were realized suitable for high-speed optical…”
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High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography by Rennon, S., Bach, L., Reithmaier, J. P., Forchel, A., Gentner, J. L., Goldstein, L.

“…Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures…”
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1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation by König, H., Rennon, S., Reithmaier, J. P., Forchel, A., Gentner, J. L., Goldstein, L.

“…Complex coupled GaInAsP/InP distributed feedback lasers were developed based on maskless focused ion beam lithography. By combining implantation enhanced wet…”
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Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation by Grenzer, J., Darowski, N., Pietsch, U., Daniel, A., Rennon, S., Reithmaier, J. P., Forchel, A.

“…Focused Ga+ ion beam implantation was used to define a laterally periodic modulation of the electronic band gap in a GaAs/Ga0.97In0.03As/Al0.2Ga0.8As/GaAs…”
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Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication by Rennon, S., Bach, L., König, H., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…A technique for highly resolved maskless patterning is obtained by combining focused ion beam lithography with wet chemical etching. When exposing InP to a…”
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Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors by Avary, K., Rennon, S., Klopf, F., Reithmaier, J.P., Forchel, A.

“…An electron cyclotron resonance reactive ion etching process is investigated for the fabrication of third order deeply etched distributed Bragg reflectors…”
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Edge-emitting microlasers with one active layer of quantum dots by Rennon, S., Avary, K., Klopf, F., Reithmaier, J.P., Forchel, A.

“…High performance edge-emitting microlasers with deeply etched distributed Bragg reflectors (DBRs) were fabricated on an AlGaAs-GaAs laser structure with a…”
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Monolithic integration of laterally complex coupled DFB lasers with passive waveguides by positive wavelength detuning by Rennon, S., Bach, L., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…We have fabricated single mode lasers with lateral gratings by focused ion beam lithography. The transmission of the DFB mode through a passive unpumped…”
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Ultrashort quantum dot microlasers by Rennon, S., Avary, K., Klopf, F., Wolf, A., Emmerling, M., Reithmaier, J.P., Forchel, A.

“…We have fabricated high performance ultrashort quantum dot microlasers based on deeply etched distributed Bragg reflector (DBR) mirrors with cavity lengths…”
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Edge-emitting microlasers with a single quantum dot active layer by Rennon, S., Avary, K., Klopf, F., Wolf, A., Emmerling, M., Reithmaier, J.P., Forchel, A.

“…We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity…”
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Laterally coupled DBR laser emitting at 1.55 [mu]m fabricated by focused ion beam lithography by Bach, L, Rennon, S, Reithmaier, J.P, chel, A, Gentner, J.L, Goldstein, L

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Laterally coupled DBR laser emitting at 1.55 micron fabricated by focused ion beam lithography by Bach, L, Rennon, S, Reithmaier, J P, chel, A, Gentner, J L, Goldstein, L

“…By using focused ion beam lithography high performance 1.55-micron emitting distributed Bragg reflector lasers suitable for high-speed optical…”
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Laterally coupled DBR laser emitting at 1.55 mum fabricated by focused ion beam lithography by Bach, L, Rennon, S, Reithmaier, J P, chel, A, Gentner, J L, Goldstein, L

“…By using focused ion beam lithography high performance 1.55-mum emitting distributed Bragg reflector lasers were realized suitable for high-speed optical…”
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Complex coupled 1.55 /spl mu/m DFB-lasers based on focused ion beam enhanced wet chemical etching and quantum well intermixing by Konig, H., Rennon, S., Reithmaier, J.P., Forchel, A., Gentner, J., Goldstein, L.

“…A simplified method for the fabrication of complex coupled gratings for distributed feedback lasers was developed for 1.55 /spl mu/m wavelength applications…”
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Quantum-dot microlasers as high-speed light sources for monolithic integration by Rennon, S., Klopf, F., Reithmaier, J.P., Forchel, A.

“…Short cavity lasers based on deeply etched Bragg-mirrors were fabricated on GaInAs/AlGaAs lasers structures with self-organised GaInAs quantum-dots as active…”
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