Search Results - "Remesnik, V.G."

Electrophysical Properties of p-Type Undoped and Arsenic-Doped [Hg.sub.1-x][Cd.sub.x]Te Epitaxial Layers with x [approximately equal to] 0.4 Grown by the MOCVD Method by Evstigneev, V.S, Varavin, V.S, Chilyasov, A.V, Remesnik, V.G, Moiseev, A.N, Stepanov, B.S

“…The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p-type [Hg.sub.1-x][Cd.sub.x]Te…”
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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm by Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.

“…•We investigated the diodes characteristics of different types called as it is customary “p-on-n” and “n-on-p” formed in MCT heteroepitaxial structures grown…”
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis by Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.

“…•HgCdTe film with p-type conductivity was implanted with arsenic.•Profiling of electrical parameters was performed after the implantation.•Discrete mobility…”
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CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range by Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Marin, D. V.

“…Heteroepitaxial structures n -Cd x Hg 1 − x Te for the near-infrared spectral range ( x ≈ 0.4) are grown by molecular beam epitaxy on Si(310) substrates 72.6…”
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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE by Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V., Świątek, Z., Morgiel, J.

“…By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results…”
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Optical monitoring of technological parameters during molecular-beam epitaxy by Volkov, P. V., Goryunov, A. V., Luk’yanov, A. Yu, Tertyshnik, A. D., Novikov, A. V., Yurasov, D. V., Baidakova, N. A., Mikhailov, N. N., Remesnik, V. G., Kuzmin, V. D.

“…It is shown that one can use low-coherence tandem interferometry to measure the substrate temperature during the course of molecular-beam epitaxy in the case…”
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Total conductance of MIS structures based on graded-gap p-[Hg.sub.1-x][Cd.sub.x]Te grown by molecular beam epitaxy by Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasilev, V.V, Varavin, V.S, Dvoretskii, S.A, Mikhailov, N.N, Kuzmin, V.D, Remesnik, V.G

“…Total conductance of MIS structures based on graded-gap p-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.22-0.23) grown by molecular beam epitaxy (MBE) is studied in a wide…”
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Special features of admittance in MIS structures based on graded-gap MBE n-[Hg.sub.1-x][Cd.sub.x]Te in a temperature range of 8-300 K by Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasil'ev, V.V, Varavin, V.S, Dvoretskii, S.A, Mikhailov, N.N, Kuz'min, V.D, Remesnik, V.G

“…Admittance of MIS structures based on graded-gap n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.31-0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide…”
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Differential resistance of space charge region in mis structures based on graded-gap mbe n-[Hg.sub.1-x][Cd.sub.x]Te in a wide temperature range by Voitsekhovskii, A.V, Nesmelov, S.N, Dzyadukh, S.M, Vasilev, V.V, Varavin, V.S, Dvoretskii, S.A, Mikhailov, N.N, Kuzmin, V.D, Remesnik, V.G

“…Total conductance of MIS structures based on heteroepitaxial n-[Hg.sub.1-x][Cd.sub.x]Te (x = 0.23) grown by molecular beam epitaxy has been studied in the…”
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High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy by Mynbaev, K. D., Bazhenov, N. L., Shilyaev, A. V., Dvoretskii, S. A., Mikhailov, N. N., Yakushev, M. V., Remesnik, V. G., Varavin, V. S.

“…The spectra of the high-temperature (up to 300 K) photoluminescence of the heteroepitaxial structures based on the CdHgTe solid solutions that are grown using…”
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Photoluminescence of [Hg.sub.1-x][Cd.sub.x]Te based heterostructures grown by molecular-beam epitaxy by Mynbaev, K.D, Bazhenov, N.L, Ivanov-Omskii, V.I, Mikhailov, N.N, Yakushev, M.V, Sorochkin, A.V, Remesnik, V.G, Dvoretsky, S.A, Varavin, V.S, Sidorov, Yu. G

“…Photoluminescence (PL) of [Hg.sub.1-x][Cd.sub.x]Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It…”
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Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4 by Atuchin, V.V., Pankevich, V.Z., Parasyuk, O.V., Pervukhina, N.V., Pokrovsky, L.D., Remesnik, V.G., Uvarov, V.N., Pekhnyo, V.I.

“…Single crystals of AgCd2GaS4 have been created by melting technique and single crystal growth using AgGaS2 as a solvent. Real defect structure of…”
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Structural and optical properties of noncentrosymmetric quaternary crystal AgCd 2GaS 4 by Atuchin, V.V., Pankevich, V.Z., Parasyuk, O.V., Pervukhina, N.V., Pokrovsky, L.D., Remesnik, V.G., Uvarov, V.N., Pekhnyo, V.I.

“…Single crystals of AgCd 2GaS 4 have been created by melting technique and single crystal growth using AgGaS 2 as a solvent. Real defect structure of…”
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HgCdTe quantum wells grown by molecular beam epitaxy by Dvoretsky, S.A., Ikusov, D.G., Kvon, Z.D., Mikhailov, N.N., Remesnik, V.G., Smirnov, R.N., Sidorov, Yu.G., Shvets, V.A.

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Electrical activation of boron implanted in p-HgCdTe ( x = 0.22) by low-temperature annealing under an anodic oxide by Talipov, N.Kh, Ovsyuk, V.N., Remesnik, V.G., Vasilyev, V.V.

“…The low-temperature electrical activation of boron atoms implanted in p-HgCdTe has been observed for the first time. The bulk crystals of p-Hg 0.75Cd 0.22Te…”
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Method for the characterization of electron, light- and heavy-hole concentrations and mobilities in narrow-gap p-type HgCdTe by Talipov, N.K., Ovsyuk, V.N., Remesnik, V.G., Schaschkin, V.V.

“…A novel simple characterization method based on magnetotransport measurements has been developed to unambiguously determine the electrical parameters of the…”
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Planar photodiodes based on p-HgCdTe ( x = 0.22) epilayers grown by molecular beam epitaxy by Ovsyuk, V.N., Remesnik, V.G., Studenikin, S.A., Suslyakov, A.O., Talipov, N.Kh, Vasil'ev, V.V., Zahar'yash, T.I., Sidorov, Yu.G., Dvoretsky, S.A., Mikhaylov, N.N., Liberman, V.G., Varavin, V.S.

“…This paper reports on the realization of small area long-wavelength infrared (LWIR) photodiodes based on CdHgTe films grown by molecular beam epitaxy (MBE)…”
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