Search Results - "Remennyi, M.A"

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.

“…Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that…”
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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

“…•In InAs- and InAsSbP-based Light Emitting Diodes, the amplitude of the optical output 1/f noise is less than the amplitude of the reverse bias current noise…”
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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

“…Low frequency photocurrent noise, as well as the forward current noise are studied for the first time in mid-infrared InAsSbP/InAs double heterostructure…”
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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths by Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…Research data for photovoltaic, I-V and C-V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength…”
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction by Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•Linear impurity distribution near the p-n junction.•Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).•D4.7μm,300K∗ as high as 6.5 × 108 Jones…”
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237] by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the…”
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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure by Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array…”
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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•BLIP regime starting from 190K at 3μm.•Capacitance as small as 1.3×10−7Fcm−2, 80K.•Good uniformity of diode parameters in 8×8 PD matrix…”
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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design…”
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P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling by Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M

“…InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 pm spectral region in…”
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Nonuniformity in the spatial distribution of negative luminescence in InAsSb by Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M

“…The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and…”
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes by Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial…”
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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes by Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•We tested for the first time InAs double heterostructure photodiodes at low temperatures.•InAs DH photodiodes exhibited superior performance compared to any…”
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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range by Remennyi, M.A., Zotova, N.V., Karandashev, S.A., Matveev, B.A., Stus’, N.M., Talalakin, G.N.

“…We describe “flip chip bonded” In(Ga)As and InAsSb heterostructure photodiodes and light emitting diodes (LEDs) ( λ=3.3–4.3 μm) grown onto n-InAs substrate…”
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InGaAsSb negative luminescent devices with built-in cavities emitting at [formula omitted] by Remennyi, M.A., Matveev, B.A., Zotova, N.V., Karandashev, S.A., M. Stus’, N., Talalakin, G.N.

“…An As 2S 3 fiber coupled to an InGaAsSb photodiode was used to record the radiation distribution over the emitting surface in InGaAsSb episide-down-bonded…”
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Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH by Zotova, N.V., Karan-ov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N., Remennyi, M.A.

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3.4 /spl mu/m "flip-chip" LEDs for fiber optic liquid sensing by Matveev, B.A., Zotova, N.V., Karandashev, S.A., Remennyi, M.A., Stus, N.M., Talalakin, G.N.

“…We have characterized 3.4 mum wavelength InAsSbP/InAs light emitting diodes grown as double heterostructures by liquid phase epitaxy with a 300 mum wide…”
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