Search Results - "Reislöhner, U"
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1
Hopping conduction observed in thermal admittance spectroscopy
Published in Physical review letters (04-06-2010)“…We observe variable-range hopping conduction in thermal admittance spectroscopy and develop a method to evaluate the signal under this condition. As a relevant…”
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2
Back contact formation in thin cadmium telluride solar cells
Published in Thin solid films (31-08-2011)“…We present a model describing the undesired roll-over which is a well-known phenomenon in the current–voltage characteristics of CdTe solar cells. Therein, the…”
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Journal Article Conference Proceeding -
3
Phosphorus implanted cadmium telluride solar cells
Published in Thin solid films (31-08-2011)“…Polycrystalline cadmium telluride layers were implanted with phosphorus (P) in order to obtain an enhanced p-type doping close to the back contact of CdTe…”
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4
Transparent CdTe solar cells with a ZnO:Al back contact
Published in Thin solid films (02-12-2013)“…In order to realize transparent CdTe solar cells, we reduced the absorber layer thickness to as little as 0.25μm using a low-temperature close space…”
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5
Sulphurization of single-phase Cu11In9 precursors for CuInS2 solar cells
Published in Thin solid films (31-05-2007)Get full text
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6
Modelling the quantum efficiency of cadmium telluride solar cells
Published in Solar energy materials and solar cells (01-03-2011)“…A simple analytical model is presented describing the quantum efficiency of cadmium telluride (CdTe) solar cells. This model is based on a consistent set of…”
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7
CdTe–CdS solar cells — Production in a new baseline and investigation of material properties
Published in Thin solid films (31-05-2007)“…In this paper, we describe our new baseline for CSS–CdTe–CdS solar cells on 10 × 10 cm 2 substrates. The deposition of the p–n junction and all the following…”
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8
Investigation of the excitonic luminescence band of CdTe solar cells by photoluminescence and photoluminescence excitation spectroscopy
Published in Thin solid films (31-08-2011)“…The excitonic luminescence band of polycrystalline cadmium telluride layers has been investigated by Photoluminescence (PL) and Photoluminescence excitation…”
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9
Pathways to thin absorbers in CdTe solar cells
Published in Thin solid films (02-02-2009)“…We present approaches to reduce the absorber thickness of CdTe solar cells. The investigations were done with CdTe absorber films deposited by the close-space…”
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10
Doping profiles in CdTe/CdS thin film solar cells
Published in Thin solid films (31-05-2007)“…CdS/CdTe thin film solar cells showing comparable properties as commercial cells have been prepared by close space sublimation (CSS) in our own laboratory. We…”
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11
Epitaxial and polycrystalline CuInS2 layers: Structural metastability and its influence on the photoluminescence
Published in Thin solid films (02-02-2009)Get full text
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12
Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties
Published in Thin solid films (31-05-2007)Get full text
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13
Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels
Published in Thin solid films (22-03-2004)“…Epitaxial thin films of the wide-band-gap chalcopyrite semiconductor CuGaS2 have directly been grown on single crystalline Si substrates of (111) orientation…”
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14
Epitaxial Cu(In, Ga)S2 thin film solar cells
Published in The Journal of physics and chemistry of solids (01-11-2005)Get full text
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15
Defect-related photoluminescence of epitaxial CuInS2
Published in Thin solid films (01-06-2005)“…Using molecular beam epitaxy (MBE), CuInS2 (CIS) films have been grown on 4--in Si(111) substrates. For a detailed investigation by means of photoluminescence…”
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16
Optical properties of epitaxial CuGaS2 layers on Si(111)
Published in The Journal of physics and chemistry of solids (01-09-2003)“…CuGaS2 films epitaxially grown on Si(111) substrates by molecular beam epitaxy from elemental sources were investigated by various optical methods…”
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17
Epitaxial Cu(In,Ga)S 2 thin film solar cells
Published in The Journal of physics and chemistry of solids (01-11-2005)“…Epitaxial layers of the quaternary compound Cu(In,Ga)S 2 and the ternary compound CuInS 2 were grown on Si(111) substrates via Molecular Beam Epitaxy. The…”
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18
Epitaxial growth of CuGaS2 on Si(111)
Published in Applied physics letters (01-07-2002)“…We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray…”
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19
Maxwell-Wagner polarization in Cu(In,Ga)(S,Se) 2
Published in Applied physics letters (18-06-2012)Get full text
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20
Morphology and structure of thin epitaxial Cu(In,Ga)S 2 films on Si substrates
Published in Thin solid films (01-06-2005)“…Cu(In,Ga)S 2 (CIGS) thin films were grown epitaxially on Si substrates of various orientations. The sulphur-termination process, utilized to suppress the…”
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