Search Results - "Reis, R. dos S"

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    Ne–He bubble formation in co-implanted Si(111) substrates by Matos, L.G., dos Reis, R.M.S., Maltez, R.L.

    Published in Thin solid films (02-12-2013)
    “…We have studied Si(111) substrates co-implanted with Ne and He, and also separately implanted with these ions, as a function of the annealing temperature. Ne…”
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    Journal Article
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    Raman and TEM characterization of high fluence C implanted nanometric Si on insulator by dos Reis, R.M.S., Maltez, R.L., Moreira, E.C., Dias, Y.P., Boudinov, H.

    Published in Applied surface science (15-07-2012)
    “…► We synthesized 30–40nm SiC layers by C implantation at 600°C and 1250°C annealing. ► C region Raman spectra (1100–1700cm−1) reveal CC bounds in the layer. ►…”
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    Journal Article
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    Probing single unit-cell resolved electronic structure modulations in oxide superlattices with standing-wave photoemission by Yang, W, Chandrasena, R. U, Gu, M, Reis, R. M. S. dos, Moon, E. J, Arab, Arian, Husanu, M. -A, Ciston, J, Strocov, V. N, Rondinelli, J. M, May, S. J, Gray, A. X

    Published 12-01-2019
    “…Phys. Rev. B 100, 125119 (2019) Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with…”
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    Journal Article
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    Ion beam synthesis of SiC by C implantation into SIMOX(111) by dos Reis, R.M.S., Maltez, R.L., Boudinov, H.

    “…We report the conversion of a 65nm Si(111) overlayer of a SIMOX(111) into 30–45nm SiC by 40keV carbon implantation into it. High temperature implantation…”
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    Journal Article
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    Photovoltaic panels grid-tied by a Zeta converter by Lopez, H.F., Zollmann, C., Viero e Fernando S dos Reis, R.

    “…This paper presents the study and development of a processing power system to be used in the grid connection of renewable energy sources to the power grid. The…”
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    Conference Proceeding