Search Results - "Reece, Ronald"

Damage control of ion implantation for advanced doping process by using in-situ temperature control by Lee, KyungWon, Ameen, Michael Saied, Rubin, Leonard Michael, Roh, Dwight Dongwan, Hong, Rimpyo, Reece, Ronald Norman, Yoon, DaeHo

“…Most silicon nano-devices use ion implantation doping for electric characteristics due to precise control of concentration and location of the dopants. A…”
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Silicon damage control through the use of aromatic hydrocarbon ion implantation by Lee, KyungWon, Ameen, Michael Saied, Harris, Mark Alan, Roh, Dwight Dongwan, Reece, Ronald Norman, Yoon, DaeHo

“…The continuous shrinking of transistor devices calls for precise doping profile control. Generally, monomer carbon (C+) is implanted at doses too low to…”
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Trichophyton mentagrophytes Spores Differ From Mycelia in Their Ability to Induce Pustules and Activate Complement by Hernandez, Alfred D, Reece, Ronald E, Zucker, Albert H

“…To determine whether the morphology of dermatophytes plays a role in the clinical manifestation of dermatophytosis, we isolated spores and mycelia from…”
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Super Activation of Highly Surface Segregated Dopants in High Ge Content SiGe Obtained by Melt UV Laser Annealing by Tabata, Toshiyuki, Aubin, Joris, Huet, Karim, Mazzamuto, Fulvio, Mori, Yoshihiro, La Magna, Antonino, Rubin, Leonard M., Kopalidis, Petros, Tsai, Hao-Cheng, Roh, Dwight, Reece, Ronald

“…Activation of surface segregated dopants above the solid solubility limit in a high Ge content SiGe substrate has been demonstrated by nanosecond melt UV laser…”
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Impact of solidification velocity on activation of Ga, In, and Al segregated in high Ge content SiGe by UV melt laser anneal by Tabata, Toshiyuki, Aubin, Joris, Huet, Karim, Mazzamuto, Fulvio, Magna, Antonino La, Rubin, Leonard M., Kopalidis, Petros, Tsai, Hao-Cheng, Roh, Dwight, Reece, Ronald

“…A possible effect of solidification velocity on activation of surface segregated Ga, In, and Al in high Ge content SiGe after UV melt laser anneal has been…”
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Charge control for high-current ion implant by EROKHIN, Y, REECE, R. N, SIMONTON, R. B

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Channeling effects and quad chain implantation process optimization for low energy boron ions by Kondratenko, S., Reece, R.N., Ra, G.-J., Salam, S.

“…The results of low energy boron implantation on a batch process ion implanter are presented showing that a channeling may play an important role and have an…”
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