Search Results - "Reddy, G. Venkateshwar"

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  1. 1
    Evidence for suppressed short-channel effects in deep submicron dual-material gate (DMG) partially depleted SOI MOSFETs – A two-dimensional analytical approach

    Evidence for suppressed short-channel effects in deep submicron dual-material gate (DMG) partially depleted SOI MOSFETs – A two-dimensional analytical approach by Kumar, M. Jagadesh, Reddy, G. Venkateshwar

    Published in Microelectronic engineering (01-11-2004)
    “…Short-channel effects in a dual-material gate partially depleted (DMG-PD) silicon-on-insulator (SOI) MOSFET are studied by developing a 2-D analytical model…”
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  2. 2
    A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation

    A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation by Reddy, G.V., Kumar, M.J.

    Published in IEEE transactions on nanotechnology (01-03-2005)
    “…In this paper, we present the unique features exhibited by a modified asymmetrical double-gate (DG) silicon-on-insulator (SOI) MOSFET. The proposed structure…”
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  3. 3
    Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

    Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential by Kumar, M. Jagadesh, Reddy, G. Venkateshwar

    Published in Japanese Journal of Applied Physics (01-09-2005)
    “…In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back…”
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  4. 4
    Online Monitoring of Transmission Line Parameters Using LabView

    Online Monitoring of Transmission Line Parameters Using LabView by Kumar, V.V.S.A. Sunil, Reddy, G. Venkateshwar, Nikhil, G., Vaishnavi, G, Balamurugan, S.

    “…In power system, the power flow in a transmission line is calculated based on the designed line impedance which is assumed to be constant. But, practically the…”
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  5. 5
    A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET - Two-dimensional Analytical Modeling and Simulation

    A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET - Two-dimensional Analytical Modeling and Simulation by Reddy, G. Venkateshwar, Kumar1, M. Jagadesh

    Published 18-08-2010
    “…IEEE Trans. on Nanotechnology, Vol.4, pp.260 - 268, March 2005 In this paper, we present the unique features exhibited by modified asymmetrical Double Gate…”
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  6. 6
    Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study

    Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study by Reddy, G.Venkateshwar, Kumar, M.Jagadesh

    Published in Microelectronics (01-09-2004)
    “…The novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG…”
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  7. 7
    A new dual-material double-gate (DMDG) SOI MOSFET for nanoscale CMOS design

    A new dual-material double-gate (DMDG) SOI MOSFET for nanoscale CMOS design by Reddy, G.V., Kumar, M.J.

    “…Double-gate (DG) SOI MOSFETs employing asymmetrical gate structure (front gate p/sup +/ poly and back gate n/sup +/ poly) are foreseen to be a solution to the…”
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