Search Results - "Recht, F."

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy by Sasikumar, A., Arehart, A. R., Martin-Horcajo, S., Romero, M. F., Pei, Y., Brown, D., Recht, F., di Forte-Poisson, M. A., Calle, F., Tadjer, M. J., Keller, S., DenBaars, S. P., Mishra, U. K., Ringel, S. A.

“…Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient…”
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Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature by Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.

“…This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and…”
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Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz by Poblenz, C., Corrion, A.L., Recht, F., Chang Soo Suh, Chu, R., Shen, L., Speck, J.S., Mishra, U.K.

“…In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular…”
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Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors by Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

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Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures by Kocan, M., Umana-Membreno, G.A., Kilburn, M.R., Fletcher, I.R., Recht, F., McCarthy, L., Mishra, U.K., Nener, B.D., Parish, G.

“…This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility…”
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Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors by Kocan, M., Umana-Membreno, G.A., Chung, J.S., Recht, F., McCarthy, L., Keller, S., Mishra, U.K., Parish, G., Nener, B.D.

“…This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from current-voltage characteristics…”
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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors by Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

“…► EC−0.57eV deep level observed in all MOCVD-grown GaN HEMTs. ► EC−0.57eV level increases ∼5× with high temperature RF stressing. ► Pulsed I–V exhibit…”
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Direct observation of 0.57 eV trap-related RF output power reduction in AIGaN/GaN high electron mobility transistors by AREHART, A. R, SASIKUMAR, A, MISHRA, U. K, RINGEL, S. A, RAJAN, S, VIA, G. D, POLING, B, WINNINGHAM, B, HELLER, E. R, BROWN, D, PEI, Y, RECHT, F

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Features of the developing brain by ENCHA-RAZAVI, Férechté, SONIGO, Pascale

“…Fetal brain evaluation implies a perfect knowledge of the timing and characteristics of the developing nervous system during gestation. The first half of…”
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Identification of brain malformations: neuropathological approach by ENCHA-RAZAVI, Férechté

“…The sophistication of prenatal brain imaging (US, MRI) has awakened interest in fetal neuropathology and changed the concept of brain malformations, defined…”
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Scanning Ion Probe Studies of Silicon Implantation Profiles in AIGaN/GaN HEMT Heterostructures: Groups in Nitrides, SiC and ZnO by KOCAN, M, UMANA-MEMBRENO, G. A, KILBURN, M. R, FLETCHER, I. R, RECHT, F, MCCARTHY, L, MISHRA, U. K, NENER, B. D, PARISH, G

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A MANIFOLD FOR DRYING ORGANIC SOLVENT EXTRACTS UNDER REDUCED PRESSURE by ALBERT-RECHT, F

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Pregnancy-associated alpha 2-glycoprotein (alpha 2-PAG) and IgA: their parallel distribution in the human gastrointestinal tract by Armstrong, S S, Brunt, P W, Mowat, N A, Recht, F A, Horne, C H

“…Using a combined immunoperoxidase (PAP)/direct immunofluorescence (IF) staining technique, pregnancy-associated alpha 2-glycoprotein (alpha 2-PAG) has been…”
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Characterization of non-alloyed ohmic contacts to Si-lmplanted AlGaN/GaN heterostructures for high-electron mobility transistors by KOCAN, M, UMANA-MEMBRENO, G. A, CHUNG, J. S, RECHT, F, MCCARTHY, L, KELLER, S, MISHRA, U. K, PARISH, G, NENER, B. D

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Cold haemagglutination disease treated by thalidomide by Lewis, H B, Albert-Recht, F, Walker, W

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Serum complement (C'3) and immunoglobulin levels in dermatitis herpetiformis by Fraser, N G, Beck, J S, Albert-Recht, F

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The estimation of serum cholesterol by JURAND, J, ALBERT-RECHT, F

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AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts by Recht, F., McCarthy, L., Shen, L., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.

“…In this work we report AIGaN/GaN HEMTs with nonalloyed ohmic contacts by large angle ion implantation with a contact resistance to the channel of 0.2 Omegamm…”
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CORRECTION FOR NON-LINEARITY IN THE RESPONSE OF THE CHROMOSCAN by ALBERT-RECHT, F, OWEN, J A

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An aluminium block heater for controlled temperature digestion by ALBERT-RECHT, F, FRAZER, S C

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