Search Results - "Rebuffat, B."

MOSFET layout modifications for hump effect removal by Carmona, M., Rebuffat, B., Delalleau, J., Gagliano, O., Lopez, L., Ogier, J.-L., Goguenheim, D.

“…[Display omitted] •A statistics method of parametric measurement enabled the characterization of hump effect.•With TCAD simulation in three dimensions, hump…”
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Effect of ions presence in the SiOCH inter metal dielectric structure by Rebuffat, B., Della Marca, V., Masson, P., Ogier, J-L, Mantelli, M., Paulet, O., Lopez, L., Laffont, R.

“…In this paper, the electrical instabilities of Inter Metal Dielectric (IMD) SiOCH are investigated. These instabilities concern leakage current between metal…”
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Relaxation effect on cycling on NOR flash memories by Rebuffat, B., Ogier, J.-L, Masson, P., Mantelli, M., Laffont, R.

“…This study is driven by the need to improve endurance of Flash memory. First of all, relaxation during cycling is performed at high temperature. An effect of…”
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All regimes mobility extraction using split C–V technique enhanced with charge-sheet model by Hubert, Q., Carmona, M., Rebuffat, B., Innocenti, J., Masson, P., Masoero, L., Julien, F., Lopez, L., Chiquet, P.

“…•Split C–V method is paired with charge-sheet model to extract effective mobility.•Effective mobility is extracted from weak to strong inversion.•Effective…”
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MOSFET layout modifications for hump effect removal: Insulating Films on Semiconductors 2013 by CARMONA, M, REBUFFAT, B, DELALLEAU, J, GAGLIANO, O, LOPEZ, L, OGIER, J.-L, GOGUENHEIM, D

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Effect of AC stress on oxide TDDB and trapped charge in interface states by Rebuffat, B., Masson, P., Ogier, J.-L, Mantelli, M., Laffont, R.

“…This study is driven by the need to improve the oxide reliability of a memory cell. The effects of dynamic high electric field stressing on thin oxide have…”
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