Search Results - "Rayner, G B"

Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films by Rayner, G. B., Kang, D., Zhang, Y., Lucovsky, G.

“…The local bonding of Zr, Si, and O atoms in plasma-deposited, and post-deposition annealed Zr silicate pseudobinary alloys [( ZrO 2 ) x ( SiO 2 ) 1−x ] was…”
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A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys by LUCOVSKY, G, RAYNER, G. B, KANG, D, HINKLE, C. L, HONG, J. G

“…One of the more significant limitations for the integration of transition metal silicate alloys as gate dielectrics into advanced Si devices is a chemical…”
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Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity by Rayner, G.B., Kang, D., Lucovsky, G.

“…Chemical phase separation is an important issue for process integration of non-crystalline Zr and Hf silicate alloys into advanced microelectronic devices…”
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Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity by Rayner, G.B., Kang, D., Hinkle, C.L., Hong, J.G., Lucovsky, G.

“…Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical…”
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Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys by Lucovsky, G., Rayner, G. B.

“…Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance–voltage curves of metal–oxide–semiconductor capacitors…”
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Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys by Lucovsky, G., Zhang, Y., Rayner, G. B., Appel, G., Ade, H., Whitten, J. L.

“…This article addresses differences between the electronic structure of: (i) alternative high-k transition metal (TM) rare earth dielectrics and (ii) SiO 2 and…”
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Chemical and physical limits on the performance of metal silicate high- k gate dielectrics by Lucovsky, G., Rayner, G.B., Johnson, R.S.

“…This research identifies four significant limitations on the performance of high- k alternative gate dielectrics that derive from inherent relationships…”
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Device-quality GaN–dielectric interfaces by 300 °C remote plasma processing by Bae, C, Rayner, G.B, Lucovsky, G

“…In previous studies, device-quality Si–SiO 2 interfaces and dielectric bulk films (SiO 2) were prepared using a two-step process; (i) remote plasma-assisted…”
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Electronic structure of noncrystalline transition metal silicate and aluminate alloys by Lucovsky, G., Rayner, G. B., Kang, D., Appel, G., Johnson, R. S., Zhang, Y., Sayers, D. E., Ade, H., Whitten, J. L.

“…A localized molecular orbital description (LMO) for the electronic states of transition metal (TM) noncrystalline silicate and aluminate alloys establishes…”
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Chemical phase separation in Zr silicate alloys: an EXAFS study distinguishing between phase separation with and without XRD detectable crystallization by Rayner, G B, Lucovsky, G, Kang, D

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A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys by Lucovsky, G., Rayner, G.B., Kang, D., Hinkle, C.L., Hong, J.G.

“…Chemical phase separation at device processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices…”
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Spectroscopic study of chemical phase separation in zirconium silicate alloys by Rayner, G. B., Kang, D., Lucovsky, G.

“…This article presents a comprehensive spectroscopic study of chemical phase separation in zirconium silicate alloys, ( ZrO 2 ) x ( SiO 2 ) 1−x , using Fourier…”
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In Situ Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT by Zheng, Y. X., Agrawal, A., Rayner, G. B., Barth, M. J., Ahmed, K., Datta, S., Engel-Herbert, R.

“…In situ spectroscopic ellipsometry was utilized in an atomic-layer-deposition (ALD) reactor for rapid and rational gate stack process optimization of the…”
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Molybdenum Atomic Layer Deposition Using MoF6 and Si2H6 as the Reactants by Seghete, D, Rayner, G.B, Cavanagh, A.S, Anderson, V.R, George, S.M

“…Mo ALD has been demonstrated by fluorosilane elimination chemistry using MoF6 and Si2H6 as the reactants. The nucleation and growth characteristics of Mo ALD…”
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Nucleation and growth of tantalum nitride atomic layer deposition on Al 2 O 3 using TBTDET and hydrogen radicals by Rayner, G. B., George, S. M.

“…The nucleation and growth of tantalum nitride atomic layer deposition (ALD) was investigated on Al 2 O 3 ALD surfaces on silicon substrates using…”
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Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals by Rayner, G. B., George, S. M.

“…The nucleation and growth of tantalum nitride atomic layer deposition (ALD) was investigated on Al2O3 ALD surfaces on silicon substrates using tertbutylimino…”
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Nucleation and growth of tantalum nitride atomic layer depositionon Al 2 O 3 using TBTDET and hydrogen radicals by Rayner, G. B., George, S. M.

“…The nucleation and growth of tantalum nitride atomic layer deposition (ALD) was investigated on Al 2 O 3 ALD surfaces on silicon substrates using…”
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Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation by Barth, M., Rayner, G. B., Mack, S., Bennett, B.R., Datta, S.

“…The measured split capacitance-voltage (CV) characteristics are shown. The combination of an in-situ H 2 plasma cleaned GaSb cap with a scaled 4.5 nm thick HfO…”
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Device-quality GaN-dielectric interfaces by 300DGC remote plasma processing by Bae, C, Rayner, G B, Lucovsky, G

“…In previous studies, device-quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process: remote plasma-assisted…”
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Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity by RAYNER, G. B, KANG, D, LUCOVSKY, G

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